ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Silicon carbide (SiC) was investigated for deep band gap states of europiumby means of deep level transient spectroscopy (DLTS). The knowledge of the properties ofoptoelectrically active impurities or defects is essential for a detailed understanding of theenergy-transfer process resulting in the observable excitations [1].SiC-samples of the polytypes 4H as well as 6H are ion-implanted by different europium-isotopes in order to obtain a chemical identification of the characterized energy levels. Herethe concentration sensitivity of the DLTS is applied to observe the elemental transmutationof the incorporated radioactive tracer atoms 146Eu (t1/2=4.51 d) and 147Eu (t1/2=24.6 d).DLTS on samples implanted with stable Eu-ions (153Eu) was carried out for comparisonand manifestation of the results. From these studies 5 Eu-related deep band gap levels areestablished: in 4H-SiC two levels at EV+0.86(2) eV and EC−0.47(2) eV, and in 6H-SiC threelevels at EV+0.88(2) eV, EC−0.29(2) eV and EC−0.67(2) eV
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.659.pdf
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