ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
Titanium boron nitride (Ti,B)N films have been prepared by depositing Ti and B atomvapor on a (100) Si single crystal and an amorphous glass substrates under simultaneous irradiationof N ions, that is ion mixing and vapor deposition (IVD) technique. The transport ratio of metalsand ion, (Bva+Tiva)/Nion, was fixed at 4, and the film thickness was supposed to be 1 [removed info]m. With anincrease in the evaporation ratio of B and Ti, Bva/Tiva, from 0 to 3, microstructure of the film waschanged from fine triangular to granular morphology. It was confirmed by the XPS analysis that Nions were preferentially coordinated with Ti atoms when the Bva/Tiva was relatively low otherwisenitriding of B probably occurred. This result was also supported by the XRD spectra of the films.Knoop hardness of the (Ti,B)N films was strongly dependent on the Bva/Tiva. The highest hardnessof approximately 5000 was observed at the Bva/Tiva=0.3; this implies that a small amount of alloyingB considerably increases the film hardness
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.127.251.pdf
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