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SpoIVB-mediated cleavage of SpoIVFA could provide the intercellular signal to activate processing of Pro-σK in Bacillus subtilis (2003)

Dong, Tran C. ; Cutting, Simon M.

Oxford, UK : Blackwell Science Ltd

Molecular microbiology 49 (2003), S. 0

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ISSN: 1365-2958

Source: Blackwell Publishing Journal Backfiles 1879-2005

Topics: Biology , Medicine

Notes: SpoIVB is the critical determinant for intercompartmental signalling of pro-σK processing during sporulation in Bacillus subtilis. We show here that the SpoIVB serine peptidase can cleave the SpoIVFA protein, which is one component of the pro-σK processing complex. SpoIVFA has been shown elsewhere (Rudner, D.Z., and Losick, R., 2002, Genes Dev 16: 1007–1018) to tether BofA and SpoIVFB in a membrane-embedded heteroligomeric complex in which BofA directly inhibits the activity of SpoIVFB. Cleavage of SpoIVFA would provide the necessary signal to dissolve this complex and release BofA-mediated inhibition on the zinc metalloprotease, SpoIVFB, that is responsible for cleaving pro-σK to its mature form. We also show that the SpoIVB PDZ domain is required for self-recognition and trans cleavage of SpoIVB and is probably also used to target an internal motif within the C-terminal region of SpoIVFA exposed in the space between the inner and outer forespore membranes. This work reveals the mechanism of intercompartmental signalling and provides a unified model as to how σK-directed gene expression in the mother cell is co-ordinated with events in the forespore chamber.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1046/j.1365-2958.2003.03651.x

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Material Properties of GaN Films Grown on SiC/SOI Substrate (2008)

Feng, Zhe Chuan ; Tran, C. ; Ferguson, Ian T. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Materials science forum Vol. 600-603 (Sept. 2008), p. 1313-1316

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ISSN: 1662-9752

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics

Notes: Material properties of GaN thin films grown on 3C-SiC/semiconductor-on-insulator (SOI)substrate, by metalorganic chemical vapor deposition technology, are studied by X-ray diffraction,photoluminescence and Raman scattering, with data indicating the high quality of GaN films. Ourresults have shown that SiC/SOI structures obtained by carbonization have the potential to serve asuseful substrates for GaN growth