ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Material properties of GaN thin films grown on 3C-SiC/semiconductor-on-insulator (SOI)substrate, by metalorganic chemical vapor deposition technology, are studied by X-ray diffraction,photoluminescence and Raman scattering, with data indicating the high quality of GaN films. Ourresults have shown that SiC/SOI structures obtained by carbonization have the potential to serve asuseful substrates for GaN growth
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1313.pdf