Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2232-2236 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transition from sputtered Al to electroplated Cu interconnects for future microelectronic devices has led to an interest in understanding the relationships between the microstructure and texture of Cu that might impact electrical performance, similar to what has been done for Al. Electroplated Cu undergoes a recrystallization at room temperature that is related to the presence of organic and inorganic additives in the plating bath. As plated, the Cu grains are small (approx. 0.1 μm) and equiaxed, but over a period of hours to days, recrystallization results in grains several microns in size. We observe a significant weakening of the strong as-plated (111) texture by x-ray diffraction pole figure measurements and an increase in the level of randomness. We propose that multiple twinning is the leading mechanism for this phenomenon. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 219-221 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use electron microscopy and x-ray diffraction to study the microstructure of TiN deposited on Al. In contrast to previous work, we show that the TiN has a large ((approximate)1 μm) grain size arising from its epitaxial orientation on the underlying Al. Within a single grain, the TiN has a heavily voided columnar structure that closely mimics the appearance of fine grains. The within-grain columnar structure arises from the usual shadowing mechanism for sputtered films, and has a weak dependence on the deposition temperature. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5547-5553 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cu metallization for sub-0.25 μm interconnects marks not only a change in metallurgy from Al and a change in architecture from subtractive to damascene but also a major shift in deposition technology from sputtering to electroplating. A remarkable feature of electroplated Cu films is the recrystallization or grain growth process that takes place at room temperature over a period of hours to weeks after plating. While this phenomenon has been described for blanket films, the influence of substrate topography on the kinetics of recrystallization has not previously been reported. Using focused ion beam imaging we demonstrate that recrystallization of the small grained as-plated Cu is initiated at the upper corners of damascene trenches and grains continue to grow laterally, eventually transforming the entire film. Removal of overlying Cu by chemical mechanical polishing before the transformation leads to incomplete recrystallization of the Cu left in the trenches. The kinetics of the recrystallization process for trench widths of 0.3, 0.5, 0.8, 2, and 5 μm reveal a minimum time for recrystallization for the 0.8 μm trenches. An acceleration of the room temperature recrystallization rates for all trench widths is observed if the films are first cycled to −78 °C immediately after plating, and a more pronounced minimum time for recrystallization is observed for the 0.8 μm trenches. These observations lead us to propose that the initiation of this process at the upper corners of the trenches and the trench width dependence of the recrystallization rate are related to higher stress or dislocation densities. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 46-48 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the growth and the properties of BN films prepared by exclusive deposition of mass separated 11B+ and 14N+ ions. BN films grown with ion energies of 500 eV and at substrate temperatures of 350 °C show the IR absorption peak at 1080 cm−1, characteristic for c-BN. These films are nearly stoichiometric and, with transmission electron diffraction, the presence of c-BN nanocrystals was revealed. We compare the growth conditions for ion beam deposition on BN, CN, and diamondlike carbon and propose that the nucleation of nanocrystalline c-BN is related to the ionicity of the BN bond. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2178-2180 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Different mask materials (photoresist and amorphous silicon) and different sample temperatures can influence the roughness of sidewalls produced during reactive ion etching of silica. Buried-channel waveguides with different microroughness on the core sidewalls (corrugation periods less than 1 μm) have been fabricated and characterized for their propagation loss at 1.3 μm wavelength. An increase in the sidewall roughness amplitude of around 0.05 μm results in an increase in the propagation loss of 0.2 dB/cm. Sidewall roughness with a larger period appears to have smaller effect on loss. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of texture studies 28 (1997), S. 0 
    ISSN: 1745-4603
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Process Engineering, Biotechnology, Nutrition Technology
    Notes: Rheological characteristics of seven Feta cheeses with different textures and produced from ultrafiltered milk (UF-Feta cheeses) were evaluated by uniaxial compression and sensory texture analysis. The effect of uniaxial deformation rate (50–2500 mm/min) on four rheological parameters: Stress at fracture s̀f), Hencky strain at fracture (ɛf), deformability modulus (E) and work to fracture (Wf) was examined. Three Principal Components (PC) described 76, 16 and 4% respectively, of the variation in the uniaxial compression data set (4 parameters at 12 deformation rates). Statistically αf, E and Wf described the same type of information in the data set. Six sensory texture attributes of the UF-Feta cheeses were evaluated by a sensory texture panel: nonoral firmness, nonoral brittleness, nonoral spreadability, oral crumbliness, oral firmness and oral stickiness. One PC described 93% of the variation in the sensory texture data and grouped the sensory variables into two negatively correlated groups: nonoral firmness nonoral brittleness, oral firmness and oral crumbliness versus nonoral spreadability and oral stickiness. Correlations and Partial Least Squares regression (PLS) between instrumental and sensory texture variables showed that nonoral and oral firmness were the nonoral and oral sensory variables best predicted from instrumental measurements. αf, E and Wf were all able to predict nonoral and oral firmness. Of the instrumental parameters, αf generally gave the best correlation to nonoral firmness at all deformation rates. Above a deformation rate of 50 mm/min correlations between αf and nonoral firmness were almost independent of deformation rate, and at any deformation rate correlations between αf and oral firmness
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 4148-4158 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present a calculation of the structure and the optical transitions of sodium atoms and dimers embedded in argon clusters and matrices. We studied several different systems: A single sodium atom in a dodecahedral argon cluster, a Na atom in a substitutional site of a fcc (face-centered-cubic) Ar lattice containing 63 atoms and a sodium dimer in a 9-atom vacancy of the same fcc lattice (Na2@Ar54). For optimizing the system geometry in its ground state, we use a simplified tight-binding scheme of a metal cluster dressed by the metal-matrix and matrix-matrix van der Waals interactions. A procedure closer to ab initio methodology is then applied using e-Na+ and e-Ar semi-local pseudopotentials and core-polarization operators to determine the electronic structure of the metal valence electrons in the environment of the rare-gas atoms. The electronic transitions and oscillator strengths are obtained by a full two-electron configuration interaction (CI) treatment in the case of Na2@Ar54. The A1Σu+→X1Σg+ transition is redshifted in comparison to the free Na2 dimer. This phenomenon does not appear in the case of a matrix-isolated atom, where all lines are blueshifted. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 682-684 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallographic texture of electroplated Cu in damascene trenches has been examined by x-ray diffraction pole figure analysis. The influence of two post-plating treatments on the resulting orientation of (111) planes of the Cu inside the trenches are compared. When the as-deposited small-grained Cu is allowed to recrystallize at room temperature before chemical mechanical polishing of the overlying Cu, we observe only a (111) fiber texture of the Cu inside the trenches. In contrast, when the overlying material is polished away before recrystallization of the small-grained Cu, pole figures show evidence of sidewall texture of the (111) planes in addition to the (111) fiber texture in the as-deposited as well as the annealed state. The presence or absence of a sidewall texture component in the pole figures offers insight into the evolution of the microstructure of damascene Cu. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 809-811 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: At the new Munich high flux reactor FRM-II, the Munich Accelerator for Fission Fragments (MAFF) is under development. The main objective will be the production and study of new very heavy elements (Z〉100). To obtain this goal, intense beams of neutron rich isotopes (70〈A〈160) are required. Thermal neutron induced fission is considered the most suitable method to produce these isotopes due to the large fission cross section and high thermal neutron flux (〉1014 n/s*cm2) available at the new reactor. The target ion source design is based on the ANUBIS source at OSIRIS in Studvik, optimized for very high neutron fluxes. Using 1 g of 235U diluted in a graphite target, intensities of several 1011 ions/s for 91Kr, 132Sn, or 144Cs, e.g., are expected after mass separation. These singly charged ions will be charge bred in an electron cyclotron resonance ion source and then injected into the MAFF-LINAC to reach the energies at the Coulomb barrier. The production of intense ion beams of neutron rich isotopes by thermal neutron induced fission, the development of the target ion source, and the development of the fission target will be presented. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7497-7505 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mechanisms underlying the refractive index changes in germanosilica films deposited by hollow cathode plasma enhanced chemical vapor deposition and subjected to UV irradiation are proposed based on observed changes in film thickness, stress, and structure. An increase in refractive index after UV exposure is observed in films deposited under low ion bombardment conditions. This increase in refractive index is accompanied by a reduction in film thickness which is an order of magnitude larger than that expected from the Lorentz–Lorentz relation. This behavior is shown to result from: (i) a significant degree of porosity in the as-deposited material; (ii) oxygen deficiency of the as-deposited material. Upon UV irradiation, the porous structure is compacted, thus accounting for the large decrease in thickness, while the oxygen deficiency is reduced causing a decrease in the material polarizability and counteracting the effect of the thickness reduction. On the other hand, germanosilica deposited under high ion-bombardment conditions is of normal optical quality and exhibits a decrease in refractive index after exposure to UV. This refractive index reduction is shown to be the result of three processes: structural dilation and stress relief on one side; and an increase in material polarizability on the other, with structural dilation having the largest effect. Annealing of the exposed samples has shown that most of the polarizability increase is likely to be annealed out at 500 °C, while the refractive index change caused by structural dilation is stable up to 800 °C. Finally, it is shown that during plasma enhanced chemical vapor deposition, germanosilica is more prone to nucleation and columnar growth than pure silica and therefore a higher level of ion bombardment is required in the former case in order to obtain a high quality homogeneous material. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...