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  • 2000-2004  (2)
  • 1995-1999  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1836-1838 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present measurements using ultrasonic force microscopy at ∼60 MHz, operating in a "waveguide" mode in which the cantilever base is vibrated and flexural ultrasonic vibrations are launched down the cantilever without exciting any particular cantilever resonance. The nonlinearity of the tip-sample force-distance curve allows the conversion of a modulated ultrasonic frequency into a low frequency vibration of the cantilever, detected in a conventional atomic force microscope. Images of Ge quantum dots on a Si substrate show contrast related to elasticity and adhesion differences, and this is interpreted with the Johnson–Kendall–Roberts model of the force-distance curve. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2386-2388 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a technique based on ultrasonic force microscopy that exploits the hysteresis in cantilever jumping to and from a sample while varying the ultrasonic amplitude. Both the elastic modulus and the work of adhesion can be determined by comparision with a relation derived between their ratio and the cantilever shift at the jump-in point. The method is applied to measurements on an aluminum thin film. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3075-3077 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hall coefficients and resistivities of a series of Bi2+xSr2−xCuOy single crystals were measured to investigate the relation between the carrier concentration and the disorder of the system in the superconductor-insulator transition. Excimer-laser cutting technique was applied to fabricate the Hall-bar shaped samples in order to determine precisely the transport properties of the single crystals. The Hall coefficients were found to be independent of the temperature, which suggests Coulomb interaction was negligible in the localized regime of Bi2+xSr2−xCuOy. We found the Ioffe–Legel condition kFl∼1 laid around n0∼8×1020 cm−3 in this system, and the carriers in the localized regime were essentially "metallic.'' © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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