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  • 1
    Digitale Medien
    Digitale Medien
    Shock Hugoniot compression curve for water up to 1 GPa by using a compressed gas gun (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 476-482 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A shock Hugoniot compression curve for water has been measured up to less than 1 GPa. A plane and steady shock wave is produced in water by the flat plate impact of a projectile accelerated by a compressed gas gun. A new experimental procedure was proposed to detect the shock wave front sensitively, which makes it possible to measure shock Hugoniot in higher precision than the previous method. The present method is based on the very large pressure dependence of the refractive index of water upon compression. By using this method, the shock compression curve was determined within the precision of 2% to 3% of the estimated shock pressure. The precision is better than that of the previous data. It was confirmed that within the pressure range covered in this experiment, the shock-particle velocity Hugoniot can be described by a linear relation with a large slope. Shock Hugoniot states on the pressure–temperature plane were calculated by using the obtained Hugoniot data combined with the values of thermodynamical variables. Thermodynamic analysis of the shock compression process was developed to estimate the contributions of irreversible heating by shock compression. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1421630
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  • 2
    Digitale Medien
    Digitale Medien
    A 2.45 GHz microwave negative hydrogen ion source : The 8th international conference on ion sources (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1042-1044 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: A 2.45 GHz microwave plasma sputter-type of negative hydrogen ion source has been developed at KEK. The microwave discharge was produced by a 2.45 GHz microwave source. In this ion source, negative hydrogen ions are produced at the surface of a molybdenum converter electrode which is placed in a hydrogen plasma confined by a cusp magnetic field. In preliminary experiments, a H− beam current was obtained in pulsed mode operation (0.2 ms, 20 Hz). Impurities (O− and OH−) of 27% in the total negative ion beam current were observed. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1150381
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  • 3
    Digitale Medien
    Digitale Medien
    A new scheme of direct beam chopping in a negative hydrogen ion source : The 8th international conference on ion sources (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 696-697 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: Direct fast H− beam chopping in a surface-plasma-type negative hydrogen ion source has been studied at KEK. The H− beam is chopped at several MHz by modulating the converter bias voltage of the ion source. However, in this case, a slow rise time of the chopped H− beam is one of the most serious problems for synchrotron injection. In order to make the rise time faster, a negative voltage was applied to the anode electrode. In the new scheme, mesh inserts were installed inside the ion extraction hole of the anode. Applying a retarding voltage on the meshes, the fast beam chopping was tested and the results are reported and discussed in the article. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1150264
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  • 4
    Digitale Medien
    Digitale Medien
    Coherent Si growth on GaAs substrates by vapor phase deposition (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 347-349 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Epitaxial Si layers with low dislocation density were grown on GaAs substrates by pyrolysis using disilane. The dislocation density evaluated from SECCO etching (HF:H2 SO4 :K2 Cr2 O7 =100 cc:50 cc:2g) was less than 104/cm2, which is lower by two orders of magnitude than that of the GaAs layer on Si substrates. We found that the electron mobility of Si layers on GaAs substrates could be raised by decreasing the growth rate and a high mobility value the same as that of a homoepitaxial layer was obtained, although the Si layers were contaminated by an arsenic impurity of 1018 cm−3 .
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.100965
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  • 5
    Digitale Medien
    Digitale Medien
    A new connection rule of wave functions at a heterointerface and band discontinuity between GaAs and AlGaAs (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 4087-4090 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A new connection rule of wave functions at a heterointerface was developed. This connection rule satisfies the conservation of probability current and contains a nonparabolic effective mass of carriers as a natural consequence of the theory. The subband energies in a GaAs/AlGaAs quantum well calculated using our new connection rule are in excellent conformity with a wide range of experimental results with band discontinuity of 85% and an effective mass for hole of 0.34m0.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.336716
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  • 6
    Digitale Medien
    Digitale Medien
    Optical properties of (AlAs)n(GaAs)n superlattices grown by metalorganic chemical vapor deposition (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2691-2695 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Optical properties were investigated on the superlattices with a unit lattice period of (AlAs)n(GaAs)n (n=1–24) which were grown by atmospheric-pressure metalorganic chemical vapor deposition. Raman spectroscopy indicated that superlattice structure is realized for each n without collapsing into alloys. Photoluminescence measurement indicated that the ultrathin-layer superlattice (with n larger than 2) has a direct energy gap, which is in good agreement with a tight-binding calculation.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.335905
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  • 7
    Digitale Medien
    Digitale Medien
    Optical properties of quantum wells with ultrathin-layer superlattice barriers (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2503-2506 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Single quantum wells of GaAs with barriers of (AlAs)2(GaAs)2 ultrathin-layer superlattices have been fabricated and photoluminescence measurement was performed. The photoluminescence energy was found to change almost linearly against the well width and the photoluminescence linewidth to get smaller with decreasing well width, which is in marked contrast to the case of a usual alloy-barriered single quantum well. It is indicated that the effective energy gap of the ultrathin-layer superlattice barrier decreases with the decreasing well width in such a structure.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.336996
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  • 8
    Digitale Medien
    Digitale Medien
    High electron mobility in the selectively doped heterostructures grown by normal pressure metalorganic chemical vapor deposition (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 334-337 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: GaAs/AlGaAs heterostructure selectively doped with Si was grown in a conventional normal pressure metalorganic chemical vapor deposition using trimethyl metals and arsine. Mobility of the two-dimensional electron gas as high as 8100, 148 000, and 401 000 cm2/V s was obtained at 300, 77, and 5 K, respectively, for a sample with an undoped Al0.3Ga0.7As spacer layer of 100 A(ring) and with a sheet electron density of about 5×1011 cm−2. The heterostructure with the spacer layer thinner than 100 A(ring) shows high mobility comparable to the best values obtained by molecular-beam epitaxy. The influence of growth parameters on the electron mobility in the heterostructure is described in detail.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.337648
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  • 9
    Digitale Medien
    Digitale Medien
    Optically pumped polarized H− ion source for RHIC spin project : The 8th international conference on ion sources (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1237-1239 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: In the RHIC spin experiment, the high intensity polarized H− ion source is requested. The required 2×1032/s cm2 luminosity in RHIC can be obtained with a 0.5 mA injected H− ion beam intensity. In order to realize such beam intensity, a KEK optically pumped polarized H− ion source is being upgraded at TRIUMF for future installation at RHIC. The first results of polarization measurements are presented here. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1150436
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  • 10
    Digitale Medien
    Digitale Medien
    Atmospheric pressure plasma chemical vapor deposition system for high-rate deposition of functional materials (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 3173-3177 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: The atmospheric pressure plasma chemical vapor deposition (CVD) system has been developed to fabricate functional thin films at very high deposition rate. The atmospheric pressure plasma, in which high-density radicals are created, has been effectively used to deposit thin films. Combination of the newly designed rotary electrode and the 150 MHz very high frequency power supply makes it possible not only to generate the high-density atmospheric pressure plasma but also to avoid ion bombardment against the film. By virtue of these noble characteristics of the system, high quality films can be fabricated at an unprecedented high deposition rate. In order to demonstrate the effectiveness of the atmospheric pressure plasma CVD system, hydrogenated amorphous silicon (a-Si:H) films were prepared in gas mixtures containing He, H2, and SiH4. The results showed that homogeneous a-Si:H films grew when substrates were heated at 200 °C. Extremely high deposition rate, which was more than 100 times faster than that of the conventional low-pressure plasma CVD technique, was realized. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1305510
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