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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7281-7283 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated semiconductor-based magnetic superlattices (SLs) containing GaAs:MnAs granular material in which MnAs nanoclusters are embedded in GaAs, and have characterized their structural, optical, and magneto-optical properties. SLs consisting of GaAs:MnAs and AlAs are shown to have good crystalline quality and excellent compatibility with nonmagnetic GaAs/AlAs heterostructures. The optical transmission properties were improved in the SLs, while keeping the strong magneto-optical properties of GaAs:MnAs. We used these magnetic SLs in a semiconductor-based magnetic microcavity as the central magnetic layer, and its optical transmission was found to have improved compared with our previous multilayer structures. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4673-4675 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Introduction of a ferromagnetic quantum well in a ferromagnetic tunnel junction is shown to greatly enhance the tunneling magnetoresistance (TMR) effect, due to spin filtering as well as energy filtering. We have theoretically analyzed resonant transmission probability of a magnetic double barrier heterostructure consisting of III–V based ferromagnetic semiconductor GaMnAs, and nonmagnetic semiconductor AlAs. Experimentally, we have observed very large TMR effect of such a system grown by low-temperature molecular-beam epitaxy, and have shown that some of the measured tunneling features are attributed to spin-dependent resonant tunneling. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6695-6697 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have succeeded in growing MnAs/GaAs/MnAs ferromagnet/semiconductor trilayer heterostructures on GaAs(111)B substrates by molecular-beam epitaxy. Double-step features were observed in magnetization characteristics due to the difference in coercive force between the top and bottom MnAs layers. Magnetoresistance (MR) curves in current-in-plane geometry showed the spin-valve effect, which was caused by the change of the magnetic alignment of the two ferromagnetic MnAs layers from parallel to antiparallel orientation. Temperature dependence of the MR was also investigated. We infer that the positive temperature coefficient of the MR by the spin-valve effect suggests the heat (carrier) induced interlayer exchange coupling. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1125-1127 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Filamentless negative ion beam production was investigated with a compact microwave ion source (2.45 GHz). One of the key points for negative ion production is the magnetic configuration. A magnetic filter field to lower electron temperature was generated in a negative ion production cell, which was shielded magnetically from a discharge cell with a magnetic field to couple microwave to plasma. Production of H− beam was studied with this source. H− was extracted through a grid slit (2×16 mm2) from plasma and accelerated to 20–40 keV. H− beam current was measured with a Faraday cup after magnetic mass separation. Continuous H− beam current of 73 μA (0.23 mA/cm2) was obtained with a magnetron power of 700 W. H− beam current was increased around 1.4 times by adding Xe gas to the H2 gas. Other negative ion species, which have a potential for applications to industrial ion beam processing with little charge-up problem, were also investigated. Carbon and hydrocarbon negative ion beams were produced using boron alkoxide (B(OCH3)3) and methane. C2H2− beams (22 μA) were obtained with the alkoxide. C2−(1.6 μA), C2H−(2.3 μA), C2H2−(0.6 μA), and H−(6.9 μA) beams were produced with methane. SiF4 and BF3 were used to generate F−, Si−, SiF3− and B− beams. Beam currents of these ion species were 17, 0.25, 1.5, and 0.03 μA, respectively. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transconductance oscillations were observed for silicon-on-insulator metal–oxide–semiconductor field-effect transistors with 50 nm channel length and 6 nm Si-layer thickness in the temperature range of 39–50 K. By investigating the temperature dependence of the oscillations it was found that the oscillations were caused by two reasons. One reason is the roughness at the Si/insulator interface responsible for the low-gate-voltage oscillations. The roughness results in different thicknesses of the Si layer along the channel, causing different quantized energy levels, which act as barriers for carriers moving in the channel. The other reason is the tunneling through the potential barrier at the p/n junctions between the contacts and the channel, which is responsible for the high-gate-voltage oscillations. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6745-6747 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed very large tunneling magnetoresistance (TMR) in Ga1−xMnxAs/AlAs/Ga1−xMnxAs ferromagnetic semiconductor tunnel junctions. A TMR ratio as high as 75% was obtained in a junction with a thin (1.5 nm) AlAs tunnel barrier when the magnetic field was applied along the [100] axis in the film plane. The TMR ratio decreased when the applied magnetic field direction was along the [11¯0] and [110]. This anisotropic TMR was found to be explained by the single-domain theory assuming cubic magnetic anisotropy with the easy axis of 〈100〉, which is induced by the zincblende-type Ga1−xMnxAs crystal structure. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7395-7397 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of magneto-optical property in the visible wavelength region has been studied on four-element semimagnetic semiconductor CdMnCoTe films deposited on quartz glass substrates by using MBE equipment. A large dispersion of Faraday rotation was observed, and the peak of the Faraday rotation was shifted to the higher photon energies with increasing Mn concentration at low temperatures. At 180 K, the value of the Faraday rotation observed for the Cd0.647Mn0.34Co0.013Te film on quartz glass was −0.36 deg/cmG at 630 nm. It is equivalent to the value of −0.36 deg/cmG observed at 77 K for the Cd0.52Mn0.48Te film on quartz glass. At 77 K, the Faraday rotation observed for the Cd0.647Mn0.34Co0.013Te film on quartz glass was −0.49 deg/cmG at 610 nm. The value is approximately two times larger than that of the Cd0.52Mn0.48Te film deposited on the same quartz glass substrate. The origin of the enhancement of Faraday rotation in CdMnCoTe films has been discussed in terms of the magnetic susceptibility χ. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1523-1525 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated a multilayer structure consisting of a semiconductor-magnetic hybrid material GaAs:MnAs and GaAs/AlAs distributed Bragg reflectors, that is a one-dimensional semiconductor-based magnetophotonic crystal. Significant enhancement of magneto-optical effect was demonstrated at a controlled wavelength at room temperature. Magneto-optical spectra of this multilayer system were well explained by theoretical calculations, and the mechanism for the enhancement of magneto-optical effect was shown. Also, the required conditions for application to optical isolators are discussed and some potential solutions are indicated. Since our structure is composed of all semiconductor-based materials, the present results potentially lead to semiconductor based magneto-optical devices integrated with III–V-based optoelectronics. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    Journal of oral rehabilitation 30 (2003), S. 0 
    ISSN: 1365-2842
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: summary  Recently, various authors have proposed the interesting idea that occlusal force may be a principal factor in cervical lesions of the tooth. It is speculated that the lateral force in non-ideal mastication causes the tooth to bend and that the resulting tensile stress damages the enamel surface. In this study, we carried out stress analysis on the upper central incisor and the lower first molar using the plastic–elastic deformation theory with two-dimensional finite element method (FEM). The essential feature that the tensile yield strength is much smaller than the compressive one was taken into account. Our results suggested that oblique loading on the tooth stretches the enamel surface near the cemento-enamel junction and causes plastic deformation which eventually leads to the cervical lesion.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    Journal of oral rehabilitation 31 (2004), S. 0 
    ISSN: 1365-2842
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: summary  Pain in denture supporting tissue is one of the most common and critical problems affecting function and treatment outcomes in complete denture prosthetics. The objective of this study was to investigate the effects of denture wearing and bite force on the pressure pain threshold (PPT) of edentulous oral mucosa. PPT was measured in denture and non-denture-wearing patients by using an electronic-controlled pressure algometer. Bite force was measured in denture-wearing patients by using a pressure-detecting sheet. The mid palate showed 200–300% higher PPT than the buccal alveolar mucosa (two-way anova, P 〈 0·0001). Denture-wearing patients exhibited 40% lower palatal PPT than non-denture-wearing patients. In denture-wearing patients, PPT in the selected areas of the oral mucosa was negatively correlated with bite force. Denture wearing may reduce PPT in selected areas of the edentulous oral mucosa, and the PPT reduction may be associated with mechanical stress on the mucosa generated by bite force.
    Type of Medium: Electronic Resource
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