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  • 2000-2004  (5)
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  • 1
    Electronic Resource
    Electronic Resource
    Formation of diluted III–V nitride thin films by N ion implantation (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2227-2234 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diluted III–Nx–V1−x alloys were successfully synthesized by nitrogen implantation into GaAs, InP, and AlyGa1−yAs. In all three cases the fundamental band-gap energy for the ion beam synthesized III–Nx–V1−x alloys was found to decrease with increasing N implantation dose in a manner similar to that observed in epitaxially grown GaNxAs1−x and InNxP1−x alloys. In GaNxAs1−x the highest value of x (fraction of "active" substitutional N on As sublattice) achieved was 0.006. It was observed that NAs is thermally unstable at temperatures higher than 850 °C. The highest value of x achieved in InNxP1−x was higher, 0.012, and the NP was found to be stable to at least 850 °C. In addition, the N activation efficiency in implanted InNxP1−x was at least a factor of 2 higher than that in GaNxAs1−x under similar processing conditions. AlyGa1−yNxAs1−x had not been made previously by epitaxial techniques. N implantation was successful in producing AlyGa1−yNxAs1−x alloys. Notably, the band gap of these alloys remains direct, even above the value of y (y〉0.44) where the band gap of the host material is indirect. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1388860
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Band anticrossing in group II-Ox–VI1−x highly mismatched alloys: Cd1−xMnyOxTe1−x quaternaries synthesized by O ion implantation (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1571-1573 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly mismatched group II-Ox–VI1−x alloys have been synthesized by oxygen implantation into Cd1−yMnyTe crystals. In crystals with y〉0.02, incorporation of O causes a large decrease in the band gap. The band gap reduction increases with y; the largest value observed is 190 meV in O-implanted Cd0.38Mn0.62Te. This striking behavior is consistent with the band anticrossing model which predicts that repulsive interaction between localized states of O and the extended states of the conduction band causes the band gap reduction. These large, O-induced effects provide a unique opportunity by which to control the optical and electronic properties in II–VI alloys. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1455689
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  • 3
    Electronic Resource
    Electronic Resource
    Synthesis of InNxP1−x thin films by N ion implantation (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1077-1079 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dilute InNxP1−x alloy thin films were synthesized by nitrogen ion implantation into InP using doses corresponding to N mole fraction up to 0.048. In the films with the highest N contents, it was shown using modulated photoreflectance that the fundamental band gap energy was decreased by up to 180 meV. The band gap reduction is similar in magnitude to that observed in epitaxially grown III–NxV1−x alloys. The InNxP1−x layers were thermally stable up to an annealing temperature of 850 °C. Using the recently developed band anticrossing model which relates the band gap reduction to the N content, we estimate that the maximum mole fraction of N achieved in the InNxP1−x alloys is larger than that reported previously for film grown by chemical vapor deposition and exceeds 0.01. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1350963
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  • 4
    Electronic Resource
    Electronic Resource
    Increased electrical activation in the near-surface region of sulfur and nitrogen coimplanted GaAs (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3607-3609 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A large increase in the electrical activation of sulfur coimplanted with nitrogen in GaAs is observed within a thin (〈500 Å) near-surface region. A free electron concentration as high as 1.5×1019 cm−3 is observed in this layer, which is a factor of 5 higher than in a GaAs sample implanted with S only. The high free electron concentration in this thin layer is the result of the incorporation of N on the As site which forms a thin dilute GaNxAs1−x alloy layer. The increased electrical activity of S in this layer is explained by the N-induced modifications of the conduction band as predicted by the band anticrossing model. The measured free electron concentration is consistent with a GaNxAs1−x alloy layer with x∼0.3%. The results have important practical implications on the fabrication of low-resistance, nonalloyed ohmic contacts to n-type GaAs. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1328766
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  • 5
    Electronic Resource
    Electronic Resource
    Observing and Calibration Strategies for FIR Imaging with SIRTF (2000)
    Springer
    Experimental astronomy 10 (2000), S. 403-413 
    Details
    ISSN: 1572-9508
    Keywords: FIR detectors ; MIPS ; SIRTF ; space instrumentation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We present data from a 16×32 array of unstressed Ge:Gadetectors, showing the long time constant responses and hook effectcharacteristic of these devices. This array is half the size of the70 μm imaging array planned for MIPS, the Multiband ImagingPhotometer for SIRTF. We present simulations of the FIR (farinfrared) sky as viewed by a MIPS array, including realistic noiseeffects and extraction of point sources with a standard photometrypackage, showing that the photometric goals of MIPS are attainablewith the current array performance and using standard analysistechniques. Previous calculations by Heim et al. (1998) haddetermined that MIPS would achieve 5-σ detections of ≤1 mJy at 70 μm in 2000 s; the simulations presented hereobtain results consistent with those calculations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1008027931585
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    Paper (German National Licenses)
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