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  • 2000-2004  (10)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1779-1783 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Addition of N2 to Ar during Ti sputtering has been found to improve the thermal stability of TiSi2. For samples sputtered with a mixture of Ar and N2, TiSi2 was found to be stable after 1050 °C, 30 s annealing. Furthermore, the phase transformation temperature from the C49 to C54 phase was not affected with the addition of a small amount of nitrogen. The stuffing of grain boundaries of TiSi2 and TiN/TiSi2 interfaces by nitrogen atoms is thought to retard the transport of Si and Ti atoms. In addition, titanium nitride particles embedded in TiSi2 near the TiN/TiSi2 interface may also protect the TiSi2 films from plastic deformation and retard the grain growth during high temperature annealing. Smaller average grain size of C54–TiSi2 in samples prepared with the addition of N2 to Ar during Ti sputtering than that in pure Ti samples is also beneficial in enhancing the thermal stability. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 820-822 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Enhanced growth of CoSi2 on epitaxial Si0.7Ge0.3 has been achieved with an interposing amorphous-Si (a-Si) layer. The a-Si layer was used as a sacrificial layer to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming CoSi2 on Si0.7Ge0.3 grown by molecular beam eptiaxy. The process promises to be applicable to the fabrication of high-speed Si–Ge devices. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 1127-1132 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Global auroral images and plasma sheet ion distributions and magnetic field data are examined for two intervals when the Ultraviolet Imager (UVI) onboard the Polar spacecraft was imaging the entire northern auroral oval and, at the same time, the Wind spacecraft was passing through the near-Earth plasma sheet. On 26 July 1997, UVI recorded a series of brief, localized auroral brightenings known as pseudobreakups. On 27 March 1996, UVI observed several global expansions of auroral activity. Large variations in the magnetic field were observed by the Wind magnetometer, large velocity moments were derived from Wind ion measurements, and ions were accelerated to mega-electron-volt energies during both types of activity. The plasma sheet dynamics appear very similar during these two different types of auroral activities. Closer inspection of the ion distribution functions and energy spectra indicate that the plasma sheet dynamics need to be characterized kinetically. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1412-1417 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The oxidation of Si catalyzed by 170-nm-thick Cu3Si at elevated temperatures has been investigated by transmission electron microscopy, glancing angle x-ray diffraction, and Auger electron spectroscopy. For wet oxidation at 140–180 °C, the thickness of the oxide was found to increase parabolically with time with an activation energy of 0.4±0.2 eV. The activation energy is close to that of diffusivity of Cu in Si. At 180–200 °C, the growth rate became slower with increasing temperature. The growth of oxide tended to be discontinuous at the surface as the oxidation temperature was increased to a temperature at or higher than 300 °C. The anomalously fast growth of oxide at low temperatures is attributed to the presence of filamentary structures of Cu clusters in the oxide to expedite the diffusion of the oxidants through oxide. At 200–250 °C, more Cu atoms diffuse to the Cu3Si/Si interface and less Cu atoms stay in the oxide, which slows down the oxide growth. The lack of filamentary structures of Cu as diffusion paths retards the growth of SiO2. At 300 °C or higher temperatures, the lack of filamentary structures of Cu clusters stopped the growth of continuous oxide layer altogether. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2237-2244 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phase formation and the morphological stability of ε1-Cu3Ge and ε1-Cu3(Si1−xGex) in Cu/epitaxial-Ge(e-Ge)/(111)Ge, Cu/(001)Ge, Cu/e-Ge/(111)Si, and Cu/(001)Si–Ge alloys have been investigated by transmission electron microscopy in conjunction with the energy dispersive spectrometry as well as by sheet resistance measurement. Epitaxial Cu and epitaxial ζ-Cu5Ge were found to form in as-deposited Cu/e-Ge/(111)Ge and Cu/e-Ge/(111)Si. On the other hand, textured Cu was found to form in the other systems. Polycrystalline ε1-Cu3Ge and ε1-Cu3(Si1−xGex) were the only phases formed in 150–500 °C annealed Cu/Ge and (Cu/e–Ge/Si and Cu/Si–Ge alloys) systems, respectively. They were found to agglomerate at 550 °C. The room-temperature oxidation of substrate in the presence of Cu3(Si1−xGex) was found only in the Cu/Si0.7Ge0.3 system. From the sheet resistance measurement, ε1-Cu3Ge has the lowest resistivity of 7 μΩ cm after 400 °C annealing. The electrical resistivity was found to decrease with the Ge content. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6110-6115 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth kinetics of amorphous interlayers (a interlayers) formed by solid-state diffusion in ultrahigh vacuum deposited polycrystalline Ti thin films on germanium and epitaxial Si1−xGex (x=0.3, 0.4 and 0.7) alloys grown on (001) Si and (111) Ge has been investigated by transmission electron microscopy and Auger electron spectroscopy. The growth of a interlayers in all systems was found to follow a linear growth behavior initially. The activation energies for the linear growth of a interlayers were found to decrease with the Ge content and are 1.0±0.2, 0.95±0.2, 0.85±0.2, and 0.7±0.2 eV for Ti/Si0.7Ge0.3, Ti/Si0.6Ge0.4, Ti/Si0.3Ge0.7, and Ti/Ge systems, respectively. The maximum thickness of a interlayer was found to increase with the Ge content with x≤0.4. On the other hand, the formation temperature of crystalline phase was observed to decrease with the Ge content. Essential factors for the formation and growth of a interlayer are discussed. The results are compared with the Ti/Si system. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 910-913 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution transmission electron microscopy in conjunction with autocorrelation function analysis have been applied to investigate the evolution of structural order in germanium ion-implanted amorphous silicon (a-Si) layers. A high density of Si nanocrystallites as small as 1 nm in size was detected in as-implanted a-Si layers. The density of embedded nanocrystalline Si was found to diminish in a-Si layers with annealing temperature first then increase. The results are discussed in the context of free energy change with annealing temperature. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 927-931 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dominant diffusing species in the formation of an amorphous interlayer between Yb thin films and crystalline Si substrates have been determined by a Mo cluster marker experiment. Metal thin films with multilayered structures were deposited on both (111) and (001)Si substrates in an ultrahigh vacuum electron beam evaporation system. The positions of the Mo cluster markers relative to the Si substrates, before and after heat treatment, were determined by high-resolution transmission electron microscopy and energy dispersive analysis of x-ray as well as autocorrelation function analysis. The displacement of the Mo cluster markers in the amorphous interlayer during the Yb–Si interdiffusion indicates that Si atoms constitute the dominant diffusing species during the growth of amorphous interlayer. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3971-3973 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Enhanced dopant activation and elimination of end-of-range (EOR) defects in BF2+-implanted silicon-on-insulator (SOI) have been achieved by high-density current stressing. With the high-density current stressing, the implantation amorphous silicon underwent recrystallization, enhanced dopant activation and elimination of the (EOR) defects. The current stressing method allows the complete removal of EOR defects that has not been possible with conventional thermal annealing in the processing of high-performance SOI devices. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    Fatigue & fracture of engineering materials & structures 23 (2000), S. 0 
    ISSN: 1460-2695
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: High-temperature low-cycle fatigue tests with and without a 10-s strain hold period in a cycle were performed on a nickel base superalloy GH4049 under a fully reversed axial total strain control mode. Three creep–fatigue life prediction methods are chosen to analyse the experimental data. These methods are the linear damage summation method (LDS), the strain range partitioning method (SRP) and the strain energy partitioning method (SEP). Their ability to predict creep-fatigue lives of GH4049 at 700, 800 and 850 °C has been evaluated. It is found that the SEP method shows an advantage over the SRP method for all the tests under consideration. At 850 °C, the LDS and SEP methods give a more satisfactory prediction for creep–fatigue lives. At the temperatures of 700 and 800 °C, the SRP and SEP methods can correlate the life data better than the LDS method. In addition, the differences in predictive ability of these methods have also been analysed. The scanning electron microscopy (SEM) examination of fracture surfaces reveals that under creep–fatigue test conditions crack initiation mode is transgranular, while crack propagation mode is either intergranular plus transgranular or entirely intergranular, dependent on test temperature.
    Type of Medium: Electronic Resource
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