Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
77 (2000), S. 1961-1963
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
A simple and high-yield method involving vapor-liquid-solid wire-like growth mechanism was developed for the synthesis of GaN nanowires. In this process, the mixture of Ga and SiO2 reacted with ammonia in the presence of the Fe2O3 catalyst supported by Al2O3. The x-ray powder diffraction measurement and transmission electron microscopy observations confirmed that the synthesized GaN nanowires are single-crystal hexagonal wurtzite structure with diameters ranged from 10 to 50 nm and lengths up to several micrometers. Based on the fact that a small Fe dominant particle attached to one end of some nanowires, a growth model of the GaN nanowires was proposed. © 2000 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.1312853
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