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  • 1
    Electronic Resource
    Electronic Resource
    Properties of the System N2O4⇆ 2NO2⇆ 2NO + O2. (1962)
    s.l. : American Chemical Society
    Journal of chemical & engineering data 7 (1962), S. 183-186 
    Details
    ISSN: 1520-5134
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/je60013a007
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Field emission property of highly ordered monodispersed carbon nanotube arrays (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3127-3129 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A template-synthesis technique based on self-ordered hexagonal nanopore alumina templates was applied to synthesize highly ordered carbon nanotube arrays via thermal decomposition of ethylene with iron as the catalyst electrodeposited into the bottom of the pores. The resultant carbon nanotubes are monodispersed and have open ends with uniform sizes. It was found that the insulating oxide layer lying between the carbon nanotubes and the underlying aluminum greatly obstructs the electron emission from the carbon nanotube arrays. After the oxide layer was removed, the arrays exhibited excellent field emission properties with a threshold electric field of ∼2.8 V/μm and emission current density of 0.08 mA/cm2 at 3.6 V/μm. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1372205
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  • 3
    Electronic Resource
    Electronic Resource
    Simple and high-yield method for synthesizing single-crystal GaN nanowires (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1961-1963 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple and high-yield method involving vapor-liquid-solid wire-like growth mechanism was developed for the synthesis of GaN nanowires. In this process, the mixture of Ga and SiO2 reacted with ammonia in the presence of the Fe2O3 catalyst supported by Al2O3. The x-ray powder diffraction measurement and transmission electron microscopy observations confirmed that the synthesized GaN nanowires are single-crystal hexagonal wurtzite structure with diameters ranged from 10 to 50 nm and lengths up to several micrometers. Based on the fact that a small Fe dominant particle attached to one end of some nanowires, a growth model of the GaN nanowires was proposed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1312853
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    Paper (German National Licenses)
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