Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 2000-2004  (18)
Source
Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Site definition and characterization of La-substituted Bi4Ti3O12 thin films prepared by metalorganic chemical vapor deposition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6533-6535 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of La content on crystal structure and ferroelectric property of La-substituted Bi4−xLaxTi3O12 were investigated. We utilized as-deposited thin films prepared on (111)Pt/SiO2/Si substrates at 680 °C by metalorganic chemical vapor deposition. The films showed (117) preferred orientation, and the lattice spacing of the (117) plane increased with increasing La content. With the aid of Raman spectroscopy, we found a pronounced site selectivity of La ions for the Bi site (A site) in the pseudoperovskite layer. Even for a small content (x=0.2), an incorporation of La ion into the pseudoperovskite layer greatly enhanced both remanent polarization and coercive field, but improved properties were almost irrespective of La content for x〉0.2. For (Bi3.27La0.73)Ti3O12 thin film, we confirmed a good fatigue endurance up to 2×1010 switching cycles. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1417988
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Film thickness dependence of ferroelectric properties of c-axis-oriented epitaxial Bi4Ti3O12 thin films prepared by metalorganic chemical vapor deposition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3934-3938 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The film thickness dependence of the ferroelectricity of c-axis-oriented epitaxially grown Bi4Ti3O12 thin films was investigated. The c-axis-oriented Bi4Ti3O12 films with thicknesses from 35 to 400 nm were epitaxially grown on (100)CaRuO3//(100)SrTiO3 substrates by metalorganic chemical vapor deposition. The dielectric constant and the coercive field of the films were almost independent of the film thickness. These values were about 151 and 18.8 kV/cm, respectively. The spontaneous polarization Ps was almost constant at 4.0 μC/cm2 and was independent of the film thickness above 140 nm. This value is almost the same as the reported value for the single crystal along the c axis. However, the Ps value decreased with decreasing film thickness below 100 nm. Moreover, the remanent polarization continuously decreased as the film thickness decreased below 400 nm. As a result, the ferroelectric property of the epitaxially grown Bi4Ti3O12 films also depended on the film thickness and was similar to that of simple perovskite-structured ferroelectric thin films, such as Pb(Zr, Ti)O3 and (Pb, La)(Zr, Ti)O3 thin films. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1352566
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Effect of atmosphere during heating of substrate on the low temperature deposition of metalorganic chemical vapor deposited Pb(Zrx,Ti1−x)O3 thin films (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 898-900 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of the atmosphere during the heating of a substrate before starting the deposition on the characteristics of the deposited Pb(Zrx,Ti1−x)O3 (PZT) films was investigated. Rhombohedral PZT films were prepared on Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition (MOCVD) from 415 to 580 °C. PZT films with smooth surfaces and low leakage current densities were obtained when the substrate was heated under an Ar atmosphere at the heating rate of 7 °C/min. Moreover, a crystalline PZT film having good ferroelectricity was obtained at as low as 415 °C when the substrate was heated under the Ar atmosphere, while the film consisted of an amorphous phase when the substrate was heated under an O2 atmosphere. These results clearly show that heating the substrate under an Ar atmosphere before starting the deposition is effective for obtaining a film with a large ferroelectricity at a low deposition temperature for the MOCVD process. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1497446
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Crystal structure and electrical properties of epitaxial SrBi2Ta2O9 films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8018-8023 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystal structure and electrical properties were investigated for (001)- and (116)-oriented SrBi2Ta2O9 (SBT) thin films deposited on (100) SrTiO3 and (100)SrRuO3(parallel)(100)SrTiO3 substrates, and (110) SrTiO3 and (110)SrRuO3(parallel)(110)SrTiO3 substrates, respectively. Both oriented SBT films were epitaxially grown with high crystal perfection, and twinning existed in the (116)-oriented one. Both oriented SBT films were found to form c/6 lattice displacements to relax the stress. The interface of the (001)-oriented film did not include misfit dislocations, defects, and an interfacial layer, and that of the (116)-oriented film included the lattice strain contrast due to an irregular atomic arrangement. The electrical property of the SBT film shows anisotropy of the ferroelectricity along the c- and a-axis directions; the remanent polarizations of the (001)- and (116)-oriented SBT films were 0 and 10.5 μC/cm2, respectively. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373490
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Orientation dependence of ferroelectricity of epitaxially grown Pb(ZrxTi1−x)O3 thin films prepared by metalorganic chemical vapor deposition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4517-4522 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Pb(ZrxTi1−x)O3 films with (001) and (100), (101) and (110), and (111) orientations were grown on (100)SrRuO3//(100)SrTiO3, (110)SrRuO3//(110)SrTiO3, and (111)SrRuO3//(111)SrTiO3 substrates, respectively. The two composition films with Zr/(Zr+Ti) ratios of 0.42 and 0.68 were prepared with the Pb/(Pb+Zr+Ti) ratio of 0.5. Well saturated and good square shape hysteresis loops with large remanent polarization (Pr) above 40 μC/cm2 were observed for all films. The Pr increased in the following order: (101), (111), and (001) orientations for the film with the Zr/(Zr+Ti) ratio of 0.42 and (100), (110), and (111) orientations for the Zr/(Zr+Ti) ratio of 0.68. On the other hand, the Ec value mainly depended on the Zr/(Zr+Ti) ratio and not on the orientation of the film; the Ec value of the film with a Zr/(Zr+Ti) ratio of 0.42 was larger than that of 0.68. The saturation behavior did not strongly depend on the orientation, especially for the films with the Zr/(Zr+Ti) ratio of 0.42. The frequency dependence of the dielectric constant was small regardless of the orientation of the films with a Zr/(Zr+Ti) ratio of 0.42. On the other hand, for 0.68, it was also small for the (100) and (110) orientations, but increased by about 15% from 103 to 106 Hz for the (111) orientation due to the relative large leakage. The (101)-oriented film with the Zr/(Zr+Ti) ratio of 0.42 and the (100)- and (111)-oriented films with 0.68 did not show deterioration up to 1010 switching cycles. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1355718
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Large remanent polarization of Bi4Ti3O12-based thin films modified by the site engineering technique (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1518-1521 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The site engineering approach based on site-selective substitutions was utilized to improve the ferroelectric properties in Bi4Ti3O12 thin film. Thin films of (Bi4−xNdx)(Ti3−yVy)O12 with both A- and B-sites substitutions were deposited on (111)Pt/Ti/SiO2/Si substrates at 600 °C by metalorganic chemical vapor deposition. Although the films substituted for the A site by Nd, (Bi4−xNdx)Ti3O12, showed no significant improvement in ferroelectricity, additional substitution for the B site by V contributed to a large ferroelectricity. Superior properties compared to (Bi4−xLax)(Ti3−yVy)O12 were confirmed for (Bi4−xNdx)(Ti3−yVy)O12 films. We also showed orientation control using Ru-based substrates. (104)-preferred orientation was obtained on (111)Pt/Ti/SiO2/Si substrates, while (110) and (111) orientations with an advantage for large polarization were stabilized on (001)Ru/SiO2/Si substrates and actually a larger ferroelectricity was obtained; the remanent polarization (2Pr) and coercive field (2Ec) of the (Bi3.35Nd0.65)(Ti2.87V0.13)O12 film were 34 μC/cm2 and 290 kV/cm, respectively. No fatigue phenomenon was also observed for the (Bi3.35Nd0.65)(Ti2.87V0.13)O12 film up to 109 switching cycles. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1491594
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Large remanent polarization of (Bi,Nd)4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2746-2748 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (104)-oriented Bi4Ti3O12, La-substituted Bi4Ti3O12[(Bi3.44La0.56)Ti3O12] and Nd-substituted Bi4Ti3O12[(Bi3.54Nd0.46)Ti3O12] films were epitaxially grown on (111)SrRuO3//(111)SrTiO3 substrates at 700 °C by metalorganic chemical vapor deposition. All deposited films showed strong (104) orientations. The values of the remanent polarization (Pr) and coercive field (Ec) of the (104)-oriented epitaxial (Bi3.54Nd0.46)Ti3O12 thin film were 25 μC/cm2 and 135 kV/cm, respectively. This Pr value was larger than that of the (104)-oriented (Bi3.44La0.56)Ti3O12 film: Pr and Ec values of the (Bi3.44La0.56)Ti3O12 were 17 μC/cm2 and 145 kV/cm, respectively. These good ferroelectric properties of (Bi3.54Nd0.46)Ti3O12 films can be explained by a large tilting of TiO6 octahedra induced by the substitution of Nd3+, the ionic radius of which is smaller than that of La3+. Moreover, this Pr value is almost equal to that of commercially used lead zirconate titanate (PZT) films for nonvolatile ferroelectric random access memory (FeRAM) applications. These (104)-oriented epitaxial (Bi3.54Nd0.46)Ti3O12 thin films also showed a fatigue-free character. As a result, lead-free Nd-substituted Bi4Ti3O12 films with good ferroelectric properties comparable with those of PZT films are useful candidates for FeRAM applications. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1468914
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Low leakage current and good ferroelectric properties of SrBi2(Ta0.7Nb0.3)2O9–Bi3TiTaO9 solid solution thin film (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2067-2069 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (1−x)SrBi2(Ta0.7Nb0.3)2O9+xBi3TiTaO9 (x=0–0.5) solid-solution (SBTN+BTT) films of low defect contents were directly crystallized on (111)Pt/Ti/SiO2/Si substrates at 650 °C by metalorganic chemical vapor deposition. The deposited films showed a strong (103) orientation. The remanent polarization (Pr) of the directly crystallized SBTN (x=0) was very small. However, the Pr value increased to 7.1 μC/cm2 by adding 30% of BTT (x=0.3) and was almost equal to that of Sr0.8Bi2.2(Ta0.7Nb0.3)2O9(S0.8B2.2TN), which is widely studied for nonvolatile memory applications. The leakage current density of the SBTN+BTT solid solution was on the order of 10−8 A/cm2 for fields up to 200 kV/cm due to its low defect contents character, while that of S0.8B2.2TN was above 10−6 A/cm2 due to the existence of defects in the Sr sites. The solid-solution film showed a fatigue-free character. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1407858
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Epitaxial-grade polycrystalline Pb(Zr,Ti)O3 film deposited at low temperature by pulsed-metalorganic chemical vapor deposition (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1000-1002 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial-grade polycrystalline Pb(Zr,Ti)O3 (PZT) films were deposited at 415 °C by source- gas-pulsed-introduced metalorganic chemical vapor deposition. The polycrystalline PZT film with Zr/(Zr+Ti)=0.35 which was prepared on (111)Pt/Ti/SiO2/Si substrate showed highly (100)- and (001)-preferred orientations. Well-saturated ferroelectricity with a remanent polarization (Pr) and coercive field of 41.4 μC/cm2 and 78.5 kV/cm, respectively, was obtained. This Pr value is almost the same as that of epitaxially grown films at 580 °C with the same composition and orientations taking into account of the volume fraction of (100) and (001) orientations. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1391229
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Effect of cosubstitution of La and V in Bi4Ti3O12 thin films on the low-temperature deposition (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 100-102 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ferroelectricity of Bi4Ti3O12 (BIT), (Bi3.2La0.8)Ti3O12 (BLT), Bi4(Ti2.97V0.03)O12 (BTV), and (Bi3.2La0.8)(Ti2.97V0.03)O12 (BLTV) films prepared at 600 °C by metalorganic chemical vapor deposition was compared. For the BIT, BLT, BTV films deposited on (111)Pt/TiO2/SiO2/Si substrates, the ferroelectricity was not obtained even though the films consisted of a single phase. On the other hand, the BLTV films exhibited clear ferroelectricity. Furthermore, the degree of squareness of the hysteresis loops of the BLTV films was improved by changing the bottom electrode from Pt to Ir, (111)Ir/TiO2/SiO2/Si substrate; the remanent polarization and the coercive field became 8.5 μC/cm2 and 48 kV/cm, respectively. Moreover, good fatigue endurance up to 109 switching cycles was confirmed for the (Bi3.2La0.8)(Ti2.97V0.03)O12 thin film. Therefore, cosubstitution of La and V in BIT thin films is effective for lowering the deposition temperature of the film. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1430267
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...