Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
78 (2001), S. 3595-3597
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Photoluminescence from a GaN0.015As0.985/GaAs quantum well has been measured at 15 K under hydrostatic pressure up to 9 GPa. Both the emissions from the GaNAs well and GaAs barrier are observed. The GaNAs-related peak shows a much weaker pressure dependence compared to that of the GaAs band gap. A group of new peaks appear in the spectra when the pressure is beyond 2.5 GPa, which is attributed to the emissions from the N isoelectronic traps in GaAs. The pressure dependence of the GaNAs-related peaks was calculated using the two-level model with the measured pressure coefficients of the GaAs band gap and N level as fitting parameters. It is found that the calculated results deviate seriously from the experimental data. An increasing of the emission intensity and the linewidth of the GaNAs-related peaks was also observed and briefly discussed. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1375837
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