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  • 2000-2004  (21)
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  • 1
    Electronic Resource
    Electronic Resource
    Study of copper silicide retardation effects on copper diffusion in silicon (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3822-3824 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A B-buried layer with a dose of 1×1014 atoms/cm2 was introduced into p-doped Si at a depth of 2.2 μm to enhance copper diffusion via its inherent gettering effect. Copper was then introduced into silicon either via a low-energy implantation followed by a thermal anneal, or through the thermal drive in of physical vapor deposited (PVD) copper film. Secondary ion mass spectrometry depth profiling of both annealed samples later indicated that while substantial amounts of copper was gettered by the B layer in the former sample, no copper was gettered by the B-buried layer in the latter sample. Further analysis with an x-ray diffraction technique showed that copper silicide, Cu3Si was formed in the latter sample. It is thus surmised that the formation of this silicide layer impeded the diffusion of copper towards the B-buried layer. This work investigates the cause of CuSix formation and the underlying reasons for the lower mobility of Cu in PVD Cu film samples. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1343518
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  • 2
    Electronic Resource
    Electronic Resource
    Crystal morphology and phase purity of diamond crystallites during bias enhanced nucleation and initial growth stages (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3354-3360 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystal morphologies and phase composition of diamond crystallites during bias enhanced nucleation and initial growth stages in microwave plasma chemical vapor deposition were investigated. Diamond nuclei were first formed in the central regions of substrates and then propagated to the sample edges. During the course of bias nucleation, excessive ion bombardment induced secondary nucleation sites on the already formed nuclei. The secondary nucleation deteriorated the overall alignment of the growing crystals. Hence, the elimination of secondary nucleation and homogeneous nucleation over substrates are fundamental requirements for the deposition of large-area uniformly oriented diamond films. Decreasing reactant pressure was found to be effective for improving plasma homogeneity and consequently nucleation uniformity. The results of bias enhanced nucleation within a pressure range from 8 to 20 Torr showed that the lower pressure of reactants enlarged the area of oriented diamond films. However, the optimum bias and duration of nucleation was found to be specific for each pressure. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289071
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  • 3
    Electronic Resource
    Electronic Resource
    Bulk-quantity Si nanosphere chains prepared from semi-infinite length Si nanowires (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 727-731 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bulk-quantity Si nanosphere chains have been fabricated. This is accomplished via the spheroidization of Si nanowires of semi-infinite lengths. The process has been extensively investigated by transmission electron microscopy. The nanosphere chains consisted of equally spaced Si crystalline nanospheres connected by Si-oxide bars. The transition from Si nanowires to Si nanosphere chains was determined by the annealing temperature, ambient pressure, initial Si nanowire diameters, and the oxide state of the outer layers of Si nanowires. The relationships between the geometry (size and spacing) of Si nanospheres, the initial state (diameter and oxide state) of Si nanowires, and the experimental conditions are discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1328786
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  • 4
    Electronic Resource
    Electronic Resource
    Surface reactivity of Si nanowires (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6396-6399 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The chemical reactivity of hydrogen-passivated surface of silicon nanowires (SiNWs) towards the reductive deposition of silver and copper ions from solution is reported. SiNWs synthesized by laser ablation were used in the investigation. The surface properties of SiNWs after the removal of the surface oxide were studied. It is found that the surface silicon of the SiNWs can readily reduce silver (I) and copper (II) ions to metal aggregates of various morphologies on the SiNW surface at room temperature. The reaction products have been characterized with scanning electron microscopy, energy dispersive x-ray spectroscopy, high-resolution transmission electron microscopy, electron energy loss spectroscopy, and x-ray photoelectron spectroscopy. By varying the concentration of Ag(I) ions in the solution, nanostructures of silver with different shapes and sizes can be obtained. This approach for synthesis of metal nanostructures offers a potential method for the preparation of desired metal catalysts. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1367402
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  • 5
    Electronic Resource
    Electronic Resource
    Manipulation of the equilibrium between diamond growth and renucleation to form a nanodiamond/amorphous carbon composite (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 3307-3309 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Composite films of ∼10 nm nanodiamond particles embedded in an amorphous carbon matrix were formed using a double bias assisted hot filament chemical vapor deposition system with a feeding gas mixture of 1% CH4:99% H2. The structure was obtained via the equilibrium of a multistage process including: (1) bias enhanced nucleation of diamond in an amorphous carbon matrix, (2) growth of both amorphous carbon and diamond, (3) suppression of the diamond growth by the surrounding amorphous carbon matrix, and (4) bias enhanced renucleation of diamond on the new amorphous carbon boundaries. The work adds insight to the diamond nucleation and growth processes. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1476721
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  • 6
    Electronic Resource
    Electronic Resource
    Microelectromagnets for the control of magnetic nanoparticles (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3308-3310 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A microelectromagnet matrix and a ring trap that position and control magnetic nanoparticles are demonstrated. They consist of multiple layers of lithographically defined Au wires separated by transparent, insulating polyimide layers on sapphire substrates. Magnetic field patterns produced by these devices allow microscopically precise control and manipulation of magnetic nanoparticles. A microelectromagnet matrix produces single or multiple peaks in the magnetic field magnitude, which trap, move, and rotate magnetic nanoparticles, as well as electromagnetic fields to probe and detect particles. Microelectromagnets are new tools with which to study and manipulate nanoparticles and biological entities. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1419049
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  • 7
    Electronic Resource
    Electronic Resource
    Scanning tunneling microscopic study of boron-doped silicon nanowires (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2468-2470 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) measurements have been performed on boron-doped and undoped silicon nanowires (SiNWs). STM images clearly showed the presence of nanoparticle chains and nanowires in the B-doped SiNWs sample. Clear and regular nanoscale domains were observed on the SiNW surface, which were attributed to boron-induced surface reconstruction. STS measurements have provided current–voltage curves for SiNWs, which showed clearly enhancement in electrical conductivity by boron doping. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1409276
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  • 8
    Electronic Resource
    Electronic Resource
    Spatial ordering of stacked quantum dots (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 984-986 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the growth conditions necessary to form an ordered quantum dot crystal by capping spatially ordered quantum dots and growing a new layer of dots on top of the capping layer. Performing Monte Carlo simulations and developing analytic arguments based on the stress energy function, we demonstrate the existence of an optimal capping layer thickness, external flux, and temperature for the formation of quantum dot crystals. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1347391
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  • 9
    Electronic Resource
    Electronic Resource
    Microstructure and field-emission characteristics of boron-doped Si nanoparticle chains (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1673-1675 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: One-dimensional boron-doped Si nanoparticle chains synthesized in bulk quantity using laser ablating SiO powder mixed with B2O3 powder have been investigated by transmission electron microscopy and measured by electron field emission. Transmission electron microscopy showed that the outer diameters of the nanoparticles in the chains were around 15 nm. High-resolution transmission electron microscopy showed that the nanoparticles had perfect lattices with an 11 nm crystalline core and a 2 nm amorphous oxide outerlayer while the distance of the interparticles was 4 nm. Field-emission measurement showed that the turn-on field of Si nanoparticle chains was 6 V/μm, which was much lower than that of undoped Si nanowires (9 V/μm). X-ray photoelectron spectroscopy confirmed that the Si nanoparticles had been heavily doped by boron. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1396313
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  • 10
    Electronic Resource
    Electronic Resource
    Oxide-assisted growth and optical characterization of gallium-arsenide nanowires (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3304-3306 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter reports the synthesis and optical characterization of GaAs nanowires obtained by oxide-assisted laser ablation of a mixture of GaAs and Ga2O3. The GaAs nanowires have lengths up to tens of micrometers and diameters in the range of 10–120 nm, with an average of 60 nm. The nanowires have a thin oxide layer covering a crystalline GaAs core with a [1¯11] growth direction. Raman scattering and photoluminescence (PL) characterizations of GaAs nanowires reveal that the spectral peaks significantly shifted and broadened from those of bulk GaAs material. The changes in these spectra are mainly attributed to impurities, defects, and residual stress in the GaAs nanowires. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1371966
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