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  • 2000-2004  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2307-2309 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 4×4 antiguided phase-locked vertical-cavity surface-emitting laser (VCSEL) arrays have been fabricated by a selective etching process and metalorganic chemical vapor deposition regrowth. Stable, diffraction-limited output is observed corresponding to either in-phase or out-of-phase mode operation, depending on the interelement spacing width. Calculations indicate resonant leaky-wave coupling occurs for interelement spacings corresponding to an integral number of half-waves of the radiation leakage from each VCSEL region, and the use of interelement loss is effective in suppressing nonresonant modes. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1659-1661 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A two-step metalorganic chemical vapor deposition growth process is used to fabricate antiguided vertical-cavity surface-emitting lasers (VCSELs) incorporating a simplified-antiresonant reflecting optical waveguide (S-ARROW) design. Preliminary results show single-mode cw operation up to 1 mW output power from a 12 μm-diam (λ=930 nm) S-ARROW VCSEL with a large lateral index step (Δn=0.1). Modal discrimination in the S-ARROW-VCSEL is calculated using a fiber-mode approximation and device optimization for high-single-mode powers is discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1219-1221 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Near-diffraction-limited-beam continuous-wave (cw) operation has been achieved to high powers from antiguided arrays with a large effective-index step between element and interelement regions. InGaAs/InGa(As)P/GaAs 40-element arrays (λ=0.985 μm) emit in beams 2×diffraction-limit (0.67°) at 1.6 W and 9×threshold in cw operation. 1 W of the coherent cw power resides in the central lobe. The external differential quantum efficiency and the threshold current are 40% and 0.4 A, respectively, for 1-mm-long devices of 191 μm emitting aperture. The overall electrical to optical power conversion efficiency at 1.6 W output power is 23%. Modeling of the thermal effects in cw operation on the array modes reveals that for high-index-step (∼0.1) near-resonant antiguided arrays thermal lensing hardly affects high-order modes, and as a consequence, 2×diffraction-limited beams can be maintained to watt-range cw powers. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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