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RNA fingerprinting of microbial community in the rhizosphere soil of grain legumes (2004)

Sharma, S. ; Aneja, M.K. ; Mayer, J. ; [et al.]

Oxford, UK : Blackwell Publishing Ltd

FEMS microbiology letters 240 (2004), S. 0

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ISSN: 1574-6968

Source: Blackwell Publishing Journal Backfiles 1879-2005

Topics: Biology

Notes: Microbial structural and expression profiles of the rhizospheres of three legumes, faba beans, peas and white lupin, were compared by RNA-arbitrarily primed PCR technique. Two different primers, M13 reverse and 10-mer primers, were used in the amplification and products resolved on non-denaturing polyacrylamide gel. With both DNA and RNA profiles Lupinus and Pisum rhizospheres were more similar to each other than to Vicia rhizosphere. The RAP-PCR products were also dot blotted and probed for bacterial peptidase transcripts. Plant-dependent rhizosphere effect was evident by the marked absence of transcripts for bacterial neutral metallopeptidase in Lupinus rhizosphere. The results of dot blot were further confirmed by RT-PCR for the expression of bacterial neutral metallopeptidase in the three rhizospheres.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1016/j.femsle.2004.09.026

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Direct patterning of nanometer-scale silicide structures on silicon by ion-beam implantation through a thin barrier layer (2001)

Mitan, M. M. ; Pivin, D. P. ; Alford, T. L. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 78 (2001), S. 2727-2729

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: CoSi2 structures were formed by focused ion-beam implantation. Patterned silicide lines with dimensions down to 150 nm were produced on (100) silicon. The process involved the ion implantation of 200 keV As++ through a cobalt (34 nm)/oxide (∼2 nm) thin film structure. The thin oxide at the Si/Co interface acted as a selective reaction barrier. Ion-beam mixing disrupted the oxide layer to allow silicidation to proceed during subsequent rapid thermal anneal treatments. Reactions were inhibited in nonimplanted areas. A threshold dose of 3×1015 cm−2 was required for process initiation. Electrical measurements resulted in resistivities ranging from 15 to 30 μΩ cm. © 2001 American Institute of Physics.