Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
79 (2001), S. 4509-4511
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
An improvement of an all-optical modulation scheme that utilizes an intersubband transition is proposed and investigated in connection with intersubband carrier relaxation dynamics. N-doped GaAs/AlGaAs quantum wells are pumped by an ultrashort (∼120 fs) intersubband-resonant pulse and probed by an interband-resonant white-light continuum. Ultrafast modulation speed of ∼0.4 ps is demonstrated, which is faster than that of the previous scheme by as much as a factor of 10. It is found that a large part of the carriers, which are excited from the first conduction subband to the second conduction subband, transfer to unknown trapping states at a relaxation time that is comparable to that of the pump–pulse duration. The existence of the carrier relaxation path via L valley subbands is strongly suggested as the cause. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1427154
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