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  • 2000-2004  (3)
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Erscheinungszeitraum
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  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5233-5235 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Surface-energy-induced secondary or tertiary recrystallization by grains with a specific surface plane can be freely governed in thin-gauged 3% Si–Fe strips by controlling the bulk content of sulfur and annealing atmosphere. During a vacuum or hydrogen annealing process, a convex profile in segregated-sulfur concentration is formed due to evaporation or desorption of segregated sulfur as a hydrogen sulfide, corresponding to a trough in magnetic induction. High magnetic induction is obtained after the annealing treatments. Final annealing under an argon atmosphere caused a saturation in segregated-sulfur concentration with annealing time. Under this extremely high segregated sulfur, grains of high index crystal plane including {111} continued to grow, resulting in low magnetic induction. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5236-5238 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effects of heating rate and surface oxidation on magnetic induction of thin-gauged 3% Si–Fe strips have been investigated. Magnetic induction increased with increasing final annealing temperature. Before and after 1150 °C, the planar orientation of grains shifted from (100)[011] to (110)[001], resulting in magnetic induction higher than 1.90 T. Magnetic induction after final annealing was higher in case of a faster heating rate. This is because enough time for growth of (110) grains is given in the case. Irrespective of transient annealing temperature, magnetic induction after final annealing was mostly higher than 1.90 T. A maximum, 1.97 T, was obtained at a transient annealing temperature of 800 °C. This is because iron oxide formed at 800 °C inhibited the surface-energy-induced selective growth of (100)[011] grains during heating up to 1200 °C. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    Springer
    Journal of materials science 19 (2000), S. 1171-1173 
    ISSN: 1573-4811
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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