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  • 1
    Electronic Resource
    Electronic Resource
    Microstructure and electrical properties of textured Sr0.51Ba0.48La0.01Nb2O6 thin films (2000)
    Springer
    Applied physics 70 (2000), S. 355-358 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 77.80; 68.55; 81.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. Sr0.51Ba0.48La0.01Nb2O6 (SBLN) thin films were prepared on platinized silicon substrates by pulsed laser deposition (PLD) combined with annealing technique. The preferred orientation, surface morphology, composition, and interfacial properties of the SBLN thin films were characterized by X-ray diffraction, atomic force microscopy, transmission electron microscopy, X-ray energy dispersive spectroscopy, and automatic spreading resistance measurement. The ferroelectric properties were confirmed by P – E hysteresis loops. The frequency variation of the dielectric constant was measured as well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050059
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Low-temperature preparation of SrxBi2+yTa2O9 ferroelectric thin film by pulsed laser deposition and its application to a metal–ferroelectric–nitride–oxide–semiconductor structure (2000)
    Springer
    Applied physics 71 (2000), S. 113-116 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 81.15.Fg; 77.80.-e; 68.55. -a
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. Preferentially (105)-oriented SrxBi2+yTa2O9 (SBT) thin films on SiN/SiO2/p-Si(100) prepared by the pulsed laser deposition (PLD) method at a temperature as low as 400 °C, which is the lowest process temperature for growing SBT ferroelectric thin films on a silicon nitride film. Excess Bi promotes crystallization of the SBT film. A metal–ferroelectric–nitride–oxide–semiconductor (MFNOS) structure, which is very important in ferroelectric gate memory FET, has been fabricated by depositing the SBT film on silicon nitride–oxide–silicon. The MFNOS structures show capacitance–voltage (C–V) hysteresis corresponding to ferroelectric hysteresis. A memory window of the C–V hysteresis is improved, to be as high as 3.5 V in the SBT(400 nm)/SiNx(7 nm)/SiO2(18 nm)/Si compared with the window of 2.7 V in the SBT(400 nm)/SiO2(27 nm)/Si (MFOS), where the thicknesses of their insulator layers are nearly the same. Little degradation is induced in the C–V characteristics of the SiNx/SiO2/p-Si structure when depositing the SBT film by PLD at low temperature. It is also found that the SiNx layer acts as a diffusion barrier against component atoms in the SBT film during its deposition. Finally, the MFNOS structure prepared at the low temperature is very promising for a next-generation ferroelectric gate memory FET.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050037
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    Paper (German National Licenses)
    Fulltext
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