ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
A noninvasive voltage probe, consisting of a one-dimensional channel, has been fabricated within a modulation doped GaAs/AlGaAs heterostructure. With precision piezoelectric scanning equipment this probe has been brought to within 14 nm of a semiconductor device which includes surface gates and a 300 nm deep two-dimensional electron gas. Measurements of voltages applied to these conducting layers have been made at room temperature and at 4.2 K using the sensitive conductance of the one-dimensional channel. A voltage resolution of 0.48 mV has been observed at 4.2 K. Probe conductance measurements have also been made as a function of probe–sample separation. The conductance–separation data were fitted using a simple parallel plate capacitor model and a height resolution of 4 nm was calculated. Images of the sample layers have been obtained and a lateral resolution of 760 nm observed. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1351839
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