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  • 1
    Electronic Resource
    Electronic Resource
    Thermally stable spin valve films with synthetic antiferromagnet pinned by NiMn for recording heads beyond 20 Gbit/in.2 (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5720-5722 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal stability of spin valve films with synthetic antiferromagnet (SAF) pinned by antiferromagnetic IrMn, NiO, and NiMn layers were studied. The SAF layer enhances the thermal stability in general; however, the blocking temperature (and the blocking temperature distribution) of the antiferromagnet is still important for the magnetic rigidity of the pinned layer. Once the temperature reaches the blocking temperature the SAF layer can go into either the spin flip or flop state, depending upon the magnetic moment ratio of the reference layer and pinned layers. The GMR linear head response can be distorted for nonlinearity. The NiMn pinned SAF structure shows magnetic and thermal stability which makes it practical for the real products. A high GMR of 11% can be obtained in both bottom and top NiMn SAF spin valves by advanced processes. Recording heads were built using such stacks which demonstrated recording areal density of 20 Gbit/in.2 and beyond. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372500
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  • 2
    Electronic Resource
    Electronic Resource
    A study on pinned layer magnetization processes in different antiferromagnetic coupling systems of spin-valves (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5729-5731 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper we report on magnetization reversal processes of pinned layers in different ferromagnetic and anti-ferromagnetic bilayer and spin-valve structures by observing hysteresis, switching field distribution (SFD), and time-dependent effects. The fact that time-dependent coercivity Hc tendency is more pronounced in ordered AF materials than that of disordered AF materials implies a spin reversal of some AF grains with locally low pinning field and low blocking temperature. We propose a simple qualitative model to explain our results in terms of a distribution of the pinning reversal field and temperature in AF layer, which may be due to a grain size distribution in the AF layer and an incomplete and inhomogeneous phase transformation in some ordered AF materials. High resolution electron microscopy (HREM) results reveal that lattice spacing does change from place to place in AF region of some ordered AF materials. The evidence indicates an incomplete and inhomogeneous phase transformation in the ordered AF systems, supporting the results of the magnetization reversal process study. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372503
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  • 3
    Electronic Resource
    Electronic Resource
    Bi3.25La0.75Ti3O12 thin films prepared on Si (100) by metalorganic decomposition method (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1733-1735 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bi3.25La0.75Ti3O12 (BLT) thin films have been grown on n-type Si (100) substrates by metalorganic decomposition method. The structural properties of the films were examined by x-ray diffraction. The BLT films exhibit good insulating property with room temperature resistivities in the range of 1012–1013 Ω cm. The current–voltage characteristics show ohmic conductivity in the lower voltage range and space-charge-limited conductivity in the higher voltage range. The capacitance–voltage characteristic hysteresis curves show that the metal-ferroelectric-semiconductor structure has memory effect. The fixed charge density and the surface state density were also calculated. The results obtained indicate that the present BLT films are suitable for making ferroelectric field effect transistor memories. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1355012
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  • 4
    Electronic Resource
    Electronic Resource
    Avalanche multiplication and ionization coefficient in AlGaAs/InGaAs p-n-p heterojunction bipolar transistors (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 4217-4219 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The hole-initiated impact ionization multiplication factor Mp−1 and the ionization coefficient αp in AlGaAs/InGaAs p-n-p heterojunction bipolar transistors (HBTs) are presented. A large discrepancy is observed at low electric field when the measured data from the p-n-p HBTs are compared with those given from avalanche photodiode. The results show that the conventional impact ionization models, based on local electric field, substantially overestimate the hole impact ionization multiplication factor Mp−1. We believe that the hole ionization coefficient in p-n-p HBTs where significant dead space effects occur in the collector space charge region. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1336551
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  • 5
    Electronic Resource
    Electronic Resource
    AlN/AlGaN superlattices as dislocation filter for low-threading-dislocation thick AlGaN layers on sapphire (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 604-606 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on an approach of using AlN/AlGaN superlattices (SLs) for threading-dislocation-density reduction to grow high quality thick AlGaN on sapphire. Using x-ray diffraction (XRD) measurements and etch pits counting by atomic force microscopy, we show that the insertion of AlN/AlGaN SLs suppresses the material mosaicity and decreases the threading dislocation density by two orders of magnitude, and then eliminates cracking. Dislocation densities deduced from the XRD results and those from chemical etching are in a good agreement. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1494858
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  • 6
    Electronic Resource
    Electronic Resource
    Effects of Solids Loading, pH, and Polyelectrolyte Addition on the Stabilization of Concentrated Aqueous BaTiO3 Suspensions (2000)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 83 (2000), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Colloidal stability of concentrated aqueous BaTiO3 suspensions with ammonium salts of poly(acrylic acid) (PAA-NH4) and poly(methacrylic acid) (PMAA-NH4) as a function of pH and solids loading is investigated. For suspensions with solids loading less than 40 vol%, the required polyelectrolyte concentration to stabilize aqueous BaTiO3 suspensions decreases with increasing pH, but remains relatively unchanged with increasing solids loading. As the solids loading continuously increases (e.g., 〉50 vol%), the required amount of polyelectrolyte increases, but exhibits a minimum at pH ∼ 9.2. The critical amount of polyelectrolyte needed to achieve colloidal stability of aqueous BaTiO3 suspensions as a function of pH and solids loading is summarized in a three-dimensional stability map.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2000.tb01185.x
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  • 7
    Electronic Resource
    Electronic Resource
    Effects of Individual Layer Thickness on the Structure and Electrical Properties of Sol–Gel-Derived Ba0.8Sr0.2TiO3 Thin Films (2000)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 83 (2000), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Ba0.8Sr0.2TiO3 thin films were prepared with various individual layer thicknesses using a sol–gel process. The individual layer thickness strongly affected the structure, ferroelectricity, and dielectric properties of the films. The films prepared with an individual layer thickness of 60 nm showed small equiaxed grains, cubic structure, temperature-independent dielectric constant, and no ferroelectricity. The films prepared with an individual layer thickness of 8 nm showed columnar grains, tetragonal structure, good ferroelectricity, and two dielectric peaks in the dielectric constant–temperature curve. The individual layer thickness for layer-by-layer homoepitaxy growth that resulted in columnar grains was 〈20 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2000.tb01599.x
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  • 8
    Electronic Resource
    Electronic Resource
    Organic Distributions in Dried Alumina Green Tape (2001)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 84 (2001), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Distributions of organic binder (poly(vinyl butyral) (PVB)) and plasticizer (dibutyl phthalate (DBP)) in alumina green tape dried at different temperatures are studied. More PVB and DBP are observed on the bottom (Mylar side) than on the top surface (air side) of the green tape. Inside the green tape, however, PVB distribution, which remains relatively unchanged with drying temperature in the range of 30°–80°C, increases with distance from the bottom to the top. In contrast, the DBP concentration remains relatively unchanged with the depth of green tape when the drying temperature is 〈50°C. At 80°C, however, a significant drop in DBP concentration near the top surface of green tape is found. Mathematical analysis using the finite difference method is completed to describe the PVB distribution in alumina green tape, and the results show reasonable agreement with experimental observations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2001.tb00648.x
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  • 9
    Electronic Resource
    Electronic Resource
    Fabrication and Characterization of Pyroelectric Ba0.8Sr0.2TiO3 Thin Films by a Sol-Gel Process (2001)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 84 (2001), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: A sol-gel process was used to prepare pyroelectric Ba0.8Sr0.2TiO3 thin films with large columnar grains (100–200 nm in diameter) on Pt/Ti/SiO2/Si substrates, via using a 0.05M solution precursor. The relationship between dielectric constant and temperature (ɛr-T) showed two distinctive phase transitions in the Ba0.8Sr0.2TiO3 thin films. Both the remnant polarization and the coercive field decreased as the temperature increased from −73°C to 40°C. Its low dissipation factor (tan δ= 2.6%) and high pyroelectric coefficient (p= 4.6 × 10−4 C·(m2·K)−1 at 33°C), together with its good insulating properties, made the prepared Ba0.8Sr0.2TiO3 thin films promising for use in uncooled infrared detectors and thermal imaging applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2001.tb00854.x
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  • 10
    Electronic Resource
    Electronic Resource
    Dielectric and Ferroelectric Properties of Nanocrystalline Bi2Ti2O7 Prepared by a Metallorganic Decomposition Method (2002)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 85 (2002), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Nanopowders of Bi2Ti2O7 were synthesized by a metallorganic decomposition (MOD) technique. Pure Bi2Ti2O7 nanocrystals formed after annealing at 550°C for 5 min. X-ray patterns show that Bi20TiO32 is a metastable phase during Bi2Ti2O7 formation. It was found that there were two peaks in the curves of the dielectric response as a function of temperature for pressed nanocrystalline Bi2Ti2O7 samples. The Curie temperature decreases with decrease of grain size whereas the ferroelectric-ferroelectric phase transition temperature increases. The hysteresis loops observed also suggest that Bi2Ti2O7 might belong to a ferroelectric material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2002.tb00585.x
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