Bibliothek

feed icon rss

Ihre E-Mail wurde erfolgreich gesendet. Bitte prüfen Sie Ihren Maileingang.

Leider ist ein Fehler beim E-Mail-Versand aufgetreten. Bitte versuchen Sie es erneut.

Vorgang fortführen?

Exportieren
Filter
  • 2000-2004  (3)
Materialart
Erscheinungszeitraum
Jahr
  • 1
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3242-3244 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The initial growth process of Si1−x−yGexCy thin films on Si(001) surfaces is examined by scanning tunneling microscopy. The surface morphology of the film critically depends on the C fraction in the film. Evidence is presented on an atomic scale that the epitaxial growth of Si1−x−yGexCy films with large C fractions is dominated by phase separation between Si–C and Si–Ge, concomitant with C condensation on the surface of the growing films. We find that the addition of a thin (1–2 ML) SiGe interlayer between the Si1−x−yGexCy film and the Si substrate drastically improves the film structure, leading to a planar morphology even with large C fractions present in the film. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 2
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3398-3400 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A method to obtain high-quality strain–relaxed SiGe buffer layers on Si(001) substrates is presented. In this method, the strain relaxation of the SiGe layer is performed using a two-step procedure. Firstly, a low-temperature-grown SiGe layer, whose surface is covered by a thin Si cap layer, is thermally annealed. At this stage, the strain is incompletely relaxed and an atomically flat surface can be realized. Then, a second SiGe layer is grown on the first layer to achieve further strain relaxation. Transmission electron microscopy has clearly revealed that dislocations are dispersively introduced into the first SiGe/Si substrate interface and thus no pile up of dislocations occurs. The formation of a periodic undulation on the growth surface of the second SiGe layer is the key to inducing a drastic reduction in the threading dislocation density. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 3
    Digitale Medien
    Digitale Medien
    Springer
    Boundary layer meteorology 96 (2000), S. 473-491 
    ISSN: 1573-1472
    Schlagwort(e): Bandpass covariance ; Eddy correlation ; Frequency response ; Long-term measurement ; Scalar flux ; Water vapour
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Geologie und Paläontologie , Physik
    Notizen: Abstract The bandpass eddy covariance method has been used to measure the turbulent flux of scalar quantities using a slow-responsescalar sensor. The method issimilar in principle to the traditional eddy correlation method but includes the estimation of high-frequency components of the flux on the basis of cospectral similarity in the atmospheric surface layer. In order to investigate the performance of the method, measurements of the water vapour flux over a forest with the bandpass eddy covariance method and the direct eddy correlation method were compared. The flux obtained by the bandpass eddy covariance method agreed with that by the eddy correlation method within ±20% for most cases, in spite of a rather slow sensor-response of the adopted hygrometer. This result supports its relevance to a long-term continuous operation, since a stable, low-maintenance,general-purpose sensor canbe utilized for scalar quantities. Oneweak point of the method isits difficulty in principle to measure the correct flux when the magnitude of the sensible heat flux is very small, because the method uses the sensible heat flux as a standard reference for the prediction of undetectable high-frequency components of the scalar flux. An advanced method is then presented to increase its robustness. In the new method, output signals from a slow-response sensor are corrected using empirical frequency-responsefunctions for the sensor,thereby extending the width of the bandpass frequency region where components of the flux are directly measured (not predicted). The advanced method produced correct fluxes for all cases including the cases of small sensible heat flux. The advanced bandpass eddy covariance method is thus appropriate for along-term measurement of the scalar fluxes.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
Schließen ⊗
Diese Webseite nutzt Cookies und das Analyse-Tool Matomo. Weitere Informationen finden Sie hier...