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  • 1
    Electronic Resource
    Electronic Resource
    Y-Ba-Cu-O superconducting thin films prepared by plasma-assisted flash evaporation (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 307-309 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting thin films of Y-Ba-Cu-O oxide have been prepared on (100) MgO substrates by flash evaporation in oxygen plasma. The as-grown films deposited at substrate temperatures from 385 to 550 °C show superconducting properties with a critical temperature Tc of about 90 K. Transmission electron diffraction indicates that a film deposited at below 430 °C has both amorphous and polycrystalline regions, and that a film at above 430 °C is polycrystalline.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102412
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  • 2
    Electronic Resource
    Electronic Resource
    Photon energy dependence of vacuum ultraviolet light-induced stress in silica glass (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7385-7391 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photon energy dependence of vacuum ultraviolet light-induced stress was investigated for two types of silica glass, type I (GE214) and type III (Suprasil P20). Samples of both glass types were irradiated under three conditions: (1) with xenon (Xe) arc light directly, (2) through three kinds of filtered Xe arc light, and (3) with a high-pressure mercury (Hg) lamp. To evaluate the samples, the absorption spectra were measured in vacuum ultraviolet (VUV), UV, and infrared regions. The irradiation-induced stress was also measured. The relative shape of the Xe arc spectrum was derived, and the absorption spectra of GE214 and Suprasil P20 were determined in the VUV region at the Xe lamp operation temperature. The measured stress was converted to strain energy, which was then corrected with respect to the hydroxyl group ((Triple Bond) SiOH) content and the irradiation time. The results revealed that the corrected strain energy was linearly proportional to the amount of absorbed light within the measurement error. The photon energy threshold for inducing the strain was evaluated to be 5.6 eV for GE214, at which the absorption coefficient was ∼10 cm−1. In contrast, light absorption occurred at photon energy not less than 6.5 eV for Suprasil P20. Therefore, there is a photon energy dependence on the VUV induced stress. This dependence varies not only with the type of silica glass but also its ambient temperature which, in turn, controls the absorption coefficient. In fact, the estimated absorption coefficient at 7.5 eV and at 743 K for GE214 was about two orders of magnitude higher than that measured at room temperature. The bond cleavage and rearrangement of the silica glass network should be enhanced by heat. The analysis of these photon energy dependences also suggested that Suprasil P20 was strained more effectively than GE214, probably due to absorption of VUV light by (Triple Bond) SiOH s contained in silica glass. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369367
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  • 3
    Electronic Resource
    Electronic Resource
    Growth and properties of Si films on sapphire with predeposited amorphous Si layers (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 4073-4078 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si (001) films of high quality were grown successfully on sapphire substrates with thin predeposited amorphous Si layers, less than 40 A(ring) thick. In order to investigate the growth features and properties of the films, the dependence of the film quality on the growth temperature, growth rate, and predeposited layer thickness were studied by various physical analyses including reflection high-energy electron diffraction (RHEED), replica electron microscopy, secondary ion mass spectroscopy (SIMS), Auger electron spectroscopy (AES) and electron spectroscopy for chemical analysis (ESCA), and electrical measurements of effective mobilities of metal-oxide-semiconductor field effect transistors (MOSFETs). The most remarkable feature of this method is that films with a smooth surface and a high crystalline quality grow even at a slow growth rate, less than 0.1 μm/min and a high growth temperature of about 1000 °C, which are concerned with surface reactions in the initial stage of chemical vapor deposition (CVD). The interface region between the film and the substrate has an abrupt concentration gradient of constituent atoms. The effective mobilities of MOSFETs fabricated on the films do not depend on the growth rate, unlike the case of the usual method, and were 1.5–1.25 times as large as those without predeposited layers. Experimental results indicate that the optimum thickness of the predeposited layer is about 20 A(ring) and that the heat treatment of the layer (∼3 min, 1000 °C) before CVD is important. A model to understand this growth method is proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336714
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  • 4
    Electronic Resource
    Electronic Resource
    Piezoresistance in n-channel inversion layers of silicon films on sapphire (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3959-3966 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The piezoresistance effect in n-channel inversion layers of (001) silicon films on sapphire (SOS) and (001) bulk silicon has been studied at room temperature using metal-oxide-semiconductor field-effect transistors radially arranged on a diaphragm with 36 mm in diameter. The piezoresistance characteristics of inversion layers are markedly different between SOS and bulk silicon. Main features of the experimental results are interpreted on the basis of the deformation potential theory and the surface quantization effect in inversion layers, and it is concluded that the difference between SOS and bulk silicon can be mainly explained by the effect of residual strain in SOS. The piezoresistance coefficients of inversion layers on SOS have been determined experimentally, and have been found that π11(approximately-equal-to)−π12. In addition, the comparison of the experimental value of π11/π12 with the calculated value is suggested that the transverse mobility of electrons in the valley which have its longitudinal axis of ellipsoid perpendicular to the film surface is smaller as compared with that in the other valleys.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337518
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  • 5
    Electronic Resource
    Electronic Resource
    Atomistic evolution of Si1–x–yGexCy thin films on Si(001) surfaces (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3242-3244 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The initial growth process of Si1−x−yGexCy thin films on Si(001) surfaces is examined by scanning tunneling microscopy. The surface morphology of the film critically depends on the C fraction in the film. Evidence is presented on an atomic scale that the epitaxial growth of Si1−x−yGexCy films with large C fractions is dominated by phase separation between Si–C and Si–Ge, concomitant with C condensation on the surface of the growing films. We find that the addition of a thin (1–2 ML) SiGe interlayer between the Si1−x−yGexCy film and the Si substrate drastically improves the film structure, leading to a planar morphology even with large C fractions present in the film. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1418447
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  • 6
    Electronic Resource
    Electronic Resource
    Reduction of threading dislocation density in SiGe layers on Si (001) using a two-step strain–relaxation procedure (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3398-3400 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method to obtain high-quality strain–relaxed SiGe buffer layers on Si(001) substrates is presented. In this method, the strain relaxation of the SiGe layer is performed using a two-step procedure. Firstly, a low-temperature-grown SiGe layer, whose surface is covered by a thin Si cap layer, is thermally annealed. At this stage, the strain is incompletely relaxed and an atomically flat surface can be realized. Then, a second SiGe layer is grown on the first layer to achieve further strain relaxation. Transmission electron microscopy has clearly revealed that dislocations are dispersively introduced into the first SiGe/Si substrate interface and thus no pile up of dislocations occurs. The formation of a periodic undulation on the growth surface of the second SiGe layer is the key to inducing a drastic reduction in the threading dislocation density. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1419037
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  • 7
    Electronic Resource
    Electronic Resource
    Effects of fluorine ion implantation on metal-oxide-semiconductor devices of silicon-on-sapphire (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 459-461 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of fluorine ion implantation on electrical characteristics of metal-oxide-semiconductor (MOS) devices on silicon-on-sapphire have been investigated. The fluorine implantation generates deep acceptor levels, the nature of which is significantly affected by the sequence of the implantation and gate oxidation in device fabrication process steps. It was found that drain leakage current of fluorine-implanted MOS transistors can be reduced to about 0.1 times compared with unimplanted devices without degrading the basic electrical characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99443
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  • 8
    Electronic Resource
    Electronic Resource
    Pig mitochondrial DNA: Polymorphism, restriction map orientation, and sequence data (1986)
    Springer
    Biochemical genetics 24 (1986), S. 385-396 
    Details
    ISSN: 1573-4927
    Keywords: pigs ; mitochondrial DNA ; restriction endonuclease ; East Asia
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology
    Notes: Abstract Restriction endonuclease cleavage patterns of mitochondrial DNA (mtDNA) in pigs were analyzed using 18 enzymes which recognize six nucleotides and 1 four-nucleotide-recognizing enzyme. Pigs including Taiwan native breeds and miniature strains maintained in Japan were examined in this study; four commercial breeds of pigs and Japanese wild boars have been investigated earlier [Watanabe, T., et al. (1985). Biochem. Genet. 23:105]. mtDNA polymorphisms were observed in the cleavage patterns of five restriction enzymes, Bg1II, EcoRV, ScaI, StuI, and TaqI. The results support the previous hypothesis that pigs must be derived from two different maternal origins, European and Asian wild boars, and that a breed, Large White, arises from both European and Asian pigs. Two HindIII cleavage fragments were cloned into the HindIII site of M13mp10 and were partially sequenced by the dideoxynucleotide-chain termination method. Furthermore, DraI and StuI cleavage sites were newly determined on the restriction endonuclease map. On the basis of these results, the restriction endonuclease cleavage map of pig mtDNA was rewritten. Comparing sequence data of pig mtDNA at 237 positions with those of cow, human, mouse, and rat mtDNA, the sequence difference, silent and replacement changes, and transitions and transversions among mammalian species were estimated. The relationships among them are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00499094
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  • 9
    Electronic Resource
    Electronic Resource
    Testing of the bandpass eddy covariance method for a long-term measurement of water vapour flux over a forest (2000)
    Springer
    Boundary layer meteorology 96 (2000), S. 473-491 
    Details
    ISSN: 1573-1472
    Keywords: Bandpass covariance ; Eddy correlation ; Frequency response ; Long-term measurement ; Scalar flux ; Water vapour
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences , Physics
    Notes: Abstract The bandpass eddy covariance method has been used to measure the turbulent flux of scalar quantities using a slow-responsescalar sensor. The method issimilar in principle to the traditional eddy correlation method but includes the estimation of high-frequency components of the flux on the basis of cospectral similarity in the atmospheric surface layer. In order to investigate the performance of the method, measurements of the water vapour flux over a forest with the bandpass eddy covariance method and the direct eddy correlation method were compared. The flux obtained by the bandpass eddy covariance method agreed with that by the eddy correlation method within ±20% for most cases, in spite of a rather slow sensor-response of the adopted hygrometer. This result supports its relevance to a long-term continuous operation, since a stable, low-maintenance,general-purpose sensor canbe utilized for scalar quantities. Oneweak point of the method isits difficulty in principle to measure the correct flux when the magnitude of the sensible heat flux is very small, because the method uses the sensible heat flux as a standard reference for the prediction of undetectable high-frequency components of the scalar flux. An advanced method is then presented to increase its robustness. In the new method, output signals from a slow-response sensor are corrected using empirical frequency-responsefunctions for the sensor,thereby extending the width of the bandpass frequency region where components of the flux are directly measured (not predicted). The advanced method produced correct fluxes for all cases including the cases of small sensible heat flux. The advanced bandpass eddy covariance method is thus appropriate for along-term measurement of the scalar fluxes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1002642028984
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