ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
We compare low-temperature, excimer-laser-induced etching of GaAs, GaSb, InAs, and InSb surfaces covered with 1–2 monolayers of condensed Cl2. The etch properties and a relative etch rate of GaAs∼GaSb〈InAs〈InSb are obtained. In addition, the etch rate of GaSb is characterized as a function of various system parameters, i.e., substrate temperature, chlorine pressure, and laser fluence. Spatially well resolved, anisotropic etching of 0.5 μm features has been achieved. © 1995 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.114922
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