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  • 1
    Electronic Resource
    Electronic Resource
    Control system for ALID-7 linear accelerator used in radiation processing (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 2984-2987 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The data acquisition and control system for the electron linear accelerator ALID-7 of 5.5 MeV and 0.7 kW, built in Romania, used on pilot-scale radiation processing, is discussed. The system provides: personnel and sensitive device protection against dangerous events; programmed interlocking and warning signals during accelerator operation; single electron pulses or electron pulse trains with small variations in pulse dose; control of electron pulse length and repetition rate, electron beam intensity, magnetron frequency, high voltage level on magnetron and electron-gun modulators, sweeping amplitude and frequency, conveyor velocity, irradiation time, and electron pulses number; simultaneous electron beam and microwave treatment. An important feature of the installation is an original control technique for obtaining programmed beam single shots and pulse trains with programmed pulse number, pulse repetition frequency, and pulse duration, from a diode gun linear accelerator, by discrete pulse temporal position modulation of the gun electron pulses and the magnetron microwave pulses. It is particularly useful for automatic control of absorbed dose rate level, irradiation process control as well as in pulse radiolysis studies, single pulse dose measurement or for research experiments where pulse-to-pulse reproducibility is required. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149858
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  • 2
    Electronic Resource
    Electronic Resource
    Present status of the 2.45 GHz ECRIS for a light ion accelerator at IAP : Proceedings of the 6th international conference on ion sources (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1183-1185 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This article presents a 2.45 GHz electron cyclotron resonance ion source which is under construction at the Institute of Atomic Physics Bucharest, Romania. It will be used as an injector into an existing linac for light ions and is a compact version of a similar source, for which we have obtained the magnetic system by superimposing an axial magnetic field generated by two solenoids and a radial magnetic field generated by a permanent magnet hexapole. For the compact version we have employed two rings made of permanent magnets for the axial magnetic field and the same type of hexapole for the radial field. This second version will work on a high voltage platform. The calculation, design, and construction of the two minimum magnetic field structures (B minimum) are presented. These sources have a special microwave antenna, of a helix type, allowing a much smaller diameter plasma chamber than is usually used for the employed microwaves. The microwave system is also presented. The first experiments were made with an Ar plasma. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146726
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  • 3
    Electronic Resource
    Electronic Resource
    Introduction (1995)
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 102 (1995), S. 0 
    Details
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-0528.1995.tb09156.x
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  • 4
    Electronic Resource
    Electronic Resource
    Capacitance-voltage profiling of quantum well structures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7005-7013 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Capacitance-voltage (C-V) analysis of high quality MBE grown quantum well samples shows that carrier distributions are averaged over the scale of the Debye length. This averaging process results in strongly temperature dependent C-V-deduced doping distributions that can be very different from the actual ones. The doping distribution of the structure is obtained by fitting numerically simulated curves to the measured C-V curves and doping profiles, respectively. Although the calculations do not take quantum size effects into account they show good agreement with the measured data. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361466
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  • 5
    Electronic Resource
    Electronic Resource
    Optical measurements of electronic bandstructure in AlGaInP alloys grown by gas source molecular beam epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3412-3415 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of bulk (AlyGa1−y)0.52In0.48P epilayers, covering the full range of compositions from y=0 to y=1, have been grown lattice matched on GaAs substrates by gas source molecular beam epitaxy. Double crystal x-ray diffraction, and low temperature photoluminescence (PL) and photoluminescence excitation (PLE) optical spectroscopy have been used to characterize the structures. PL and PLE data indicate the direct-to-indirect energy gap crossover composition to be near y∼0.55 for this alloy system. From PLE, the y dependence of the (5 K) lowest energy direct gap, EΓ–Γ, has been found to be 2.014+0.499y+0.16y2 eV. EΓ–Γ (5 K) for the indirect-gap ternary end-member Al0.52In0.48P is directly determined to be 2.685 eV. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358631
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  • 6
    Electronic Resource
    Electronic Resource
    Uniform and efficient GaAs/AlGaAs quantum dots (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1382-1384 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Uniform arrays of approximately 57 nm diam free-standing quantum dots have been produced from GaAs/AlGaAs single quantum well material by electron-beam lithography and low damage electron cyclotron resonance plasma etching. Low-temperature (5 K) photoluminescence and photoluminescence excitation spectroscopy were used to characterize the material before and after processing into quantum dots. Clear free-exciton features of linewidth comparable to that obtained from the unprocessed material have been observed in the excitation spectra of the quantum dots. As expected for this size of dot, no significant shift in the wavelength of the luminescence was observed, however, there is an apparent enhancement of the external luminescence efficiency when the geometric fill factor is taken into account. The results also show that luminescence efficiency measurements seeking to identify and elucidate intrinsic 0D effects (i.e., those due to quantum confinement in the active region) should be performed with photoexcitation directly into the active region energy states. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113208
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  • 7
    Electronic Resource
    Electronic Resource
    Indium distribution in InGaAs quantum wires observed with the scanning tunneling microscope (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1459-1461 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation of In in the growth of crescent-shaped In0.12Ga0.88As quantum wires embedded in (AlAs)4(GaAs)8 superlattice barriers is studied in atomic detail using cross-sectional scanning tunneling microscopy. It is found that the In distribution in both the surface and the first subsurface layer can be atomically resolved in the empty- and filled-state images, respectively. Strong In segregation is seen at the InGaAs/GaAs interfaces, but neither an expected enhancement of the In concentration at the center of the quantum wire compared to the planar quantum well nor In clustering beyond the statistical expectation is observed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114494
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  • 8
    Electronic Resource
    Electronic Resource
    Electronic states in GaAs v-groove quantum wire structures with superlattice barriers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2851-2853 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a joint theoretical and experimental investigation of GaAs v-groove quantum wires confined in GaAs/AlAs superlattice barriers. We have computed the electronic states for both the quantum wire and the barriers. The intrinsic bending of the superlattice layers, together with systematic spatial variations of their thickness, create localized states in the barriers that are separated from the wire. This effect has a strong impact on the overall luminescence efficiency of the wires. The results are in excellent agreement with photoluminescence and photoluminescence excitation spectra. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114806
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  • 9
    Electronic Resource
    Electronic Resource
    Hot carrier relaxation in GaAs V-groove quantum wires (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3039-3041 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured hot carrier relaxation in GaAs V-groove quantum wires using time-resolved photoluminescence. Relaxation between confined one-dimensional subbands is clearly observed on the time scale of several hundred picoseconds. A simulation of the experiment using a hybrid multisubband Monte Carlo method which includes hot phonon and degeneracy effects gives good agreement with the measurements. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114270
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  • 10
    Electronic Resource
    Electronic Resource
    Laser-based method for fabricating monodisperse metallic nanoparticles (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2605-2607 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experimental method is presented for fabrication of almost monodisperse metal nanoparticles on substrate surfaces. It relies on substantial narrowing of broad size distributions through irradiation with short laser pulses by exploiting the size dependent optical absorption coefficient of the metal particles. Successive irradiation by applying two laser wavelengths completely removes the smallest clusters of the distribution and causes a size reduction of the largest particles. Finally, only clusters with diameters in a very narrow size interval remain on the surface. By using this method, Ag clusters with mean diameters of 〈d〉=10 nm and size distributions with standard deviations of Δd/〈d〉=0.13 have been prepared. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123911
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