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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4210-4215 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial La0.7Ca0.3MnO3 thin films on the SrTiO3(100) surface have been irradiated with 250 MeV Ag17+ ions at different nominal fluence values in the range of 5×1010–4×1011 ions/cm2, resulting in columnar defects. At low fluences these defects cause changes in material properties that are small and scale linearly with dosage. Above a threshold fluence value ∼3×1011 ions/cm2 dramatic changes are observed, including an order of magnitude increase in the resistivity and 50 K drop in the Curie temperature. Transmission electron microscopy measurements show that the changes are associated with a phase transformation of the undamaged region between the columnar defects. The transformed phase has a diffraction pattern very similar to that seen in charge-ordered La0.5Ca0.5MnO3. We propose that above a critical level of ion damage, strains caused by the presence of the columnar defects induce a charge-ordering phase transition that causes the observed dramatic changes in physical properties. We speculate that a conceptually similar surface-induced charge ordering may be responsible for the "dead layer" observed in very thin strained films, and the dramatic changes in optical properties induced by polishing, and that an impurity-induced charge ordering causes the extreme sensitivity of properties to lattice substitution. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of an electric field on GMR oxide films was studied in a MOSFET configuration where the gate dielectric was a layer of SrTiO3 epitaxially grown on an underlying layer of the manganate which served as the source/drain. The response of the manganate channel was studied for different gate voltages. The following significant features were observed. The peak resistance temperature shifted to lower temperature for both polarities of the field. The resistance change varied quadratically with the field indicating the dominance of strain or polarization effects. In dynamical studies of the system using the gate voltage as an excitation the system showed anomalous slowing down near the peak of the resistivity. These results are understood on the basis of a stress effect on the film due to electro-elastic effects in the SrTiO3 layer, which introduces a tensile stress in the manganate layer upon the application of a gate voltage. The anomalous slowing down of the system near the ferromagnetic phase transition suggests a strong coupling between the spins, transport and structural distortions in the system. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: There are different models which to try to explain the transport properties of the manganese oxides in terms of magnetic polarons, Zener double exchange and Jahn-Teller distortions of the lattice which is temperature dependent. Using Rutherford backscattering techniques (2–3 MeV He ions) we are measuring the presence of lattice distortions by studying the angular scans in the channeling mode. The angular widths (FWHM) can be used to extract both dynamic and static displacements of the atoms from their equilibrium sites. The technique is extremely powerful in the sense that local uncorrected displacements as small as 0.01 A(ring) from the equilibrium position can be detected. The extraction of the physics from the data is relatively straight forward compared to other techniques such as XRD or neturon scattering. Using a variable temperature backscattering system at our center (one of three or four systems around the world) the angular width (FWHM) is found to exhibit a dramatic change with temperature increasing with decreasing temperature showing a possible correlation with both the transport and magnetic properties. The results suggest a decrease in the lattice disorder with reduced temperature far in excess of what one would predict on the basis of a simple Debye behavior. The reduction in the lattice disorder correlates very well with the resistance vs temperature dependence. A variety of manganese oxide epitaxial thin films grown by pulsed laser deposition have been studied and the data suggests a role for structural distortions in any mechanism to explain the transport properties of these materials. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the magnetic and magnetotransport properties of oxygen deficient R0.67Sr0.33MnOz (R=Nd, Pr) films and have observed superparamagnetic behavior in these films. The superparamagnetism is indicated by (i) the increasing spread between zero field cooled (ZFC) and field cooled (FC) magnetization curves as temperature decreases, (ii) a sharp drop of the ZFC magnetization at low temperature, (iii) enhanced Curie–Weiss constant above the ferromagnetic temperature, and (iv) at low temperature a sharp drop of coercivity (Hc) with increasing temperature. These findings strongly suggest that all oxygen deficient manganites are magnetically inhomogeneous; i.e., ferromagnetic clusters exist. We estimate the spin cluster diameter to be 7–10 nm at low temperature (T〈30 K). We discuss a possible origin of the giant magnetoresistance effect based on the existence of spin clusters. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have compared a single layer of La0.7Ba0.3MnO3 and a trilayer structure of SrTiO3/La0.7Ba0.3MnO3/SrTiO3, both grown epitaxially on a LaAlO3 substrate, using information obtained by ferromagnetic resonance (FMR). The trilayer samples have a more uniform magnetization and are not susceptible to environmental degradation. This may be due to the strain relief that the buffer SrTiO3 layer provides for the La0.7Ba0.3MnO3 layer. We have also studied the magnetic homogeneity of the trilayer structure as a function of the deposition temperature. The perpendicular FMR linewidth, Γ⊥, shows a clear window in the deposition temperature where the linewidth is 〈50 Oe. However, the parallel linewidth, Γ(parallel), is nearly ten times larger than Γ⊥ with only a weak dependence on the deposition temperature. This broadening of the parallel linewidth compared to the perpendicular linewidth can be explained by invoking a local unidirectional anisotropy in the plane of the film. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 5773-5773 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of La0.7Sr0.3MnO3 have been grown by pulsed laser deposition1 onto Si substrates that were buffered with Bi4Ti3O12 and yttrium-stabilized zirconia. They appear to have excellent structural properties as seen by x-ray diffraction and Rutherford backscattering. We will report spin wave resonance (SWR) and electron paramagnetic resonance (EPR) experiments at 10 GHz for 280〈T〈370 K. We observe drastic changes in the spectra consequent upon small variations in temperature: (i) At 295 K, the linewidth of the first spin wave mode is only 15 Oe (the narrowest ever observed in a manganite), and the field positions Hn of the SWR follow the simple n2 dependence expected of a uniform film, n being the mode number.2 (ii) Below 280 K, the SWR spectra developed other structures, and the resonance positoins do not follow any simple model. (iii) When T is raised to about 300 K, Hn assumes a linear dependence on n, suggesting that the film magnetization has developed a parabolic spatial variation. (iv) Near 350 K, the linewidth effectively diverges. (v) At 370 K, an EPR line with a width of only 170 Oe appears. As shown previously,3 a peak in the linewidth near the Curie temperature TC can arise from a distribution of TC values. However, in the present film, the line essentially loses it integrity near TC as if the magnetic network were splitting into several substructures. The recovery in the paramagnetic state, one can imagine, happens because the magnetic phase is liquidlike and, thereby, homogeneous. The present observations dramatically demonstrate that to produce thin films of manganites that have desirable properties over a wide T interval, it is essential to ensure a lattice match that is not upset by T variation. ©1997 American Institute of Physics.
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  • 7
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the growth and magnetic characterization of epitaxial garnet thin films and heterostructures by pulsed laser deposition. Thin films and heterostructures consisting of yttrium iron garnet (YIG) interleaved with rare earth substituted bismuth iron garnet (BIG) have been deposited on single-crystal GGG substrates. These heterostructures exhibit strong polar magneto-optic Kerr effects with rotation angles of better than 5×104 °/cm at 533 nm. Microwave measurements at 10 GHz suggest that the Eu-substituted BIG layer has a preferred out-of-plane magnetization while the YIG layer is still magnetized in-plane. The implications of the magneto-optic and microwave results will be discussed in light of the heterostructure periodicity and film microstructure. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Systematic magnetization and ferromagnetic resonance (FMR) measurements have been performed on thin-film samples of La0.67Ba0.33MnOz (TC∼340 K). It is found from the FMR data that as- grown films show broad lines whose width Γ increases to nearly 1 kOe as T reduced to 77 K. The increase roughly follows the increase in the magnetization suggesting magnetic inhomogeneity as the main cause for the rise in Γ. However, when films were properly annealed in O2, we obtained narrow lines (Γ∼200 Oe at 10 GHz). Γ was effectively independent of temperature and linearly dependent upon microwave frequency, both of which are strong signs that, we have succeeded in obtaining a uniform, homogeneous manganite sample. Having gotten a uniform material, we have measured the intrinsic properties of this system. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel giant magnetoresistance memory effect has been observed in epitaxial Nd0.7Sr0.3MnOz thin films which have previously been found to exhibit a linear increase in conductivity on first application of a magnetic field (B). Here we reported that the conductivity of the films depends not only on the applied field but also on the magnetic history. At T well below the temperature Tp where the zero-field resistivity has a peak, the film enters a high conductivity state [(ΔR/RB)(approximately-greater-than)103] upon application of a magnetic field which persists even when B is reduced to zero. The original "zero'' field state is not recovered until the sample is warmed to T∼Tp. Surprisingly, the dc magnetization exhibits only a weak irreversibility while the magnetoconductivity is markedly hysteretic. That is, while the remanent magnetization is small the remanent magnetic resistivity is 10−3 times the initial zero-field-cooled resistivity. A possible explanation based on a two-component model of semiconducting matrix with embedded shunting paths of ferromagnetic material will be presented. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetoresistivity values of the order of 106% (and in some cases even higher) have been obtained in epitaxial AxB1−xMnO3−y (A=La,Nd; B=Ca,Sr,Ba) thin films grown by pulsed laser deposition. Ferromagnetic resonance experiments suggest a granular-type behavior with conducting ferromagnetic regions (Rcond〈10 mΩ cm) in a less conducting matrix (Rinsulazting(approximately-greater-than)100.Rcond). Ion channeling experiments over a range of temperatures clearly reveal the existence of structural distortion at the peak resistivity temperature TP. Systematic studies of samples prepared under a variety of oxygenation conditions show that the resistivity above TP can be modeled with a single functional form: Rcond≈eΔ/kT, where Δ, the activation energy, is of the order of 50–200 meV. This suggests that these different samples represent the same basic material in a semiconducting matrix, with differing volume fractions of the two components which depends on the processing conditions. These "colossal'' values of MR have been obtained at temperatures lower than room temperature and at fields of the order of a few Teslas, both of which are impediments to the development of viable MR sensor and nonvolatile storage technologies.We are therefore addressing the critical scientific and technological issues through a variety of materials integration approaches. Using structural chemistry and lattice matching as fundamental guiding principles, we are growing epitaxial heterostructure superlattices consisting of the CMR oxides interleaved with magnetic perovskites such as La–Sr–Co–O (metallic ferromagnet), rare earth–Fe–O (ferromagnetic insulator). We are also exploring the possibility of using the semiconducting properties of these materials in an all-perovskite field effect transistor device. In this presentation, we will describe our progress to date on these studies to enhance the field and temperature dependence of the MR properties and explore new device architectures that utilize the inherently novel properties of these materials. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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