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  • 1995-1999  (3)
  • 1990-1994  (1)
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Materialart
Erscheinungszeitraum
Jahr
  • 1
    Digitale Medien
    Digitale Medien
    Morphology of platinum silicide films prepared by conventional and rapid thermal annealing and deep levels induced in silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3109-3114 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Electron microscopic studies and the electrical properties of Pt contacts on n-type Si annealed by conventional furnace and rapid thermal annealing (RTA) were investigated with scanning electron microscopy, transmission electron microscopy, x-ray analysis, capacitance-voltage, and deep-level transient spectroscopy measurements. An incomplete reaction between Pt and Si is observed after furnace annealing at 550 °C due to the presence of oxygen in the ambient. An almost complete reaction between Pt and Si is achieved after silicidation by RTA at 550 °C. An acceptorlike level located 0.11 eV below the conduction-band edge with a concentration of 2×1013 cm−3 is detected only after furnace annealing at 550 °C. Silicidation by RTA at 550 °C does not introduce traps in the Si band gap.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.349289
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  • 2
    Digitale Medien
    Digitale Medien
    Effect of the layered structure on the electronic properties of amorphous carbon films on n-Si (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4446-4451 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Amorphous carbon (a-C) films rich in sp3 bonds were grown onto n-type (100) silicon substrates by rf magnetron sputtering. The electrical defects created in the bulk of the carbon films as well as those at the a-C/Si interface during the deposition of the films were characterized electrically. Devices having the metal–insulator–semiconductor structure were fabricated and investigated by means of current–voltage (I–V) and capacitance–voltage (C–V) profiling and admittance spectroscopy. The construction of the films and in particular the presence of layered and bilayer structures was shown to affect the device characteristics. This behavior was attributed to Ar+ ions trapped inside the carbon bulk as well as to charge deficiencies due to the specific growth conditions of the amorphous carbon layers. The density of the interface states was found to depend considerably on the film construction, ranging from 1011 to 1013 eV−1 cm−2. The dynamic behavior of the states was expressed by the relevant time constant, which was calculated to vary from 10−3 to 10−6 s. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.371384
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  • 3
    Digitale Medien
    Digitale Medien
    Modeling the fluorescent lifetime of Y2O3:Eu (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2663-2664 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Phosphor thermography, relying on the temperature dependence of the decay time of photoluminescence from suitable phosphors, provides remote measurement of the temperature of components. Such a phosphor is yttrium oxide doped with europium (Y2O3:Eu). Associated with this phosphor is also a rise time. Demonstrated is that the rise time is also temperature dependent, as a result of known electronic transitions within the Eu ions. For the phosphor Y2O3:Eu (3.4 at.%), the rise time is an activated process in the temperature region between 25 and 850 °C. Faster than the decay time, the rise time offers the opportunity for measurement of higher velocity components. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.121091
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  • 4
    Digitale Medien
    Digitale Medien
    Device characterization for amorphous diamond-like carbon–silicon heterojunctions (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4634-4636 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report here on the electrical characterization of Al/a-C:H/n-Si devices, where the a-C:H films were ion implanted with boron. The current–voltage characteristics versus temperature demonstrated the creation of p-n heterojunctions and Schottky diodes. Maximum current outputs were reached faster for higher temperatures. Lower doses of boron implants produced Schottky diode characteristics, with a current saturation in the forward region due to the existing barrier. The values of the output currents increased with temperature and implanted dose. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.368690
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