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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Analytical chemistry 55 (1983), S. 1256-1261 
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Analytical chemistry 56 (1984), S. 922-925 
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Analytical chemistry 56 (1984), S. 2304-2307 
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: NMDA receptor stimulation concomitantly increases the release of [14C]acetylcholine and [3H]spermidine from rat striatal slices in vitro. The NMDA-induced release of both acetylcholine and spermidine was blocked with equal potency by the NMDA channel blocker phencyclidine (0.1–10 µM). However, certain other channel blockers, including dextromethorphan (1–100 µM), which antagonized NMDA-evoked acetylcholine release without affecting NMDA-evoked spermidine release, and dextrorphan (1–100 µM) and memantine (1–100 µM), which block NMDA-evoked acetylcholine release more potently than NMDA-evoked spermidine release, showed greater selectivity of action. As previously shown for ifenprodil, eliprodil (SL82.0715; 1–100 µM) blocked NMDA-evoked acetylcholine but not spermidine release. This selectivity is also observed for other agents interacting with the polyamine site(s) on the NMDA receptor, including arcaine (1–1,000 µM), philanthotoxin343, and argiotoxin636 (10 µM) and was also noted for desipramine (1–100 µM). The NMDA-induced release of acetylcholine and spermidine is likely to be mediated by different native NMDA receptor subtypes, and several NMDA antagonists may be candidates for a selective action at a particular NMDA receptor subtype.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4321-4328 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lattice-matched heterostructures of GaAs/Sc0.3Er0.7As/GaAs have been grown on GaAs substrates with various orientations by molecular beam epitaxy and characterized by transmission electron microscopy. The Sc0.3Er0.7As layer usually has good epitaxy on GaAs; the purpose of this study is to investigate the overgrowth of GaAs on Sc0.3Er0.7As. In comparison with the samples grown on nominal (100) substrates, the epitactic growth of GaAs on Sc0.3Er0.7As is slightly improved on a vicinal substrate oriented (100) 6° off towards (111)A. {311} and {211} are shown to be preferred orientations for the epitactic growth of GaAs/Sc0.3Er0.7As/GaAs heterostructures. The epilayers grown on {311} and {211} substrates are epitactically well aligned, and the density of planar defects (stacking faults and microtwins) in the overgrown GaAs layer is significantly reduced. It is suggested that the mixed {111} and {100} character surfaces assist the nucleation of GaAs on Sc0.3Er0.7As. Stacking faults and microtwins are the major defects for the epilayers grown on (110) substrates. For samples grown on (111)B-oriented substrates, twinning at the interfaces occurs frequently even when selftwinning inside each material is eliminated. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4312-4320 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of GaAs on (100)ScxEr1−xAs/GaAs (x=0 and 0.3) by molecular-beam epitaxy has been studied using transmission electron microscopy. The initial stages of the three-dimensional growth of GaAs on lattice-matched Sc0.3Er0.7As have been investigated at different growth temperatures. Besides (100) epitactic GaAs, there are also areas of {111}- and {122}-oriented GaAs observed on ScxEr1−xAs. The latter has a simple twin relationship with the neighboring (100) GaAs. Areas of {111}-oriented GaAs have been observed only at growth temperatures above 400 °C and with moderate growth rates. The GaAs islands grown at 480 °C are faceted on {110} and {111} low-index planes. These GaAs islands are elongated along 〈011〉 directions. The anisotropy of the island shape is greater at higher growth temperatures. The growth of GaAs on ScxEr1−xAs as islands is considered to be due to chemical rather than strain effects. The morphology of GaAs layers grown on ScxEr1−xAs is shown to have a strong dependence on the growth conditions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 34 (1980), S. 0 
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: The effect of lesions of the catecholamine nerve terminals in the medial prefrontal cortex of the rat on neurotransmitter mechanisms within the basal ganglia has been investigated. Bilateral 6-hydroxydopamine lesions were stereotaxically placed in the dopamine-rich (DA) area of the frontal cortex. Animals were pretreated with desmethylimipramine to block the uptake of neurotoxin into noradrenergic (NA) terminals and to make it more selective for DA terminals. The lesion produced a selective reduction of both NA and DA from the medial prefrontal cortex, a result related to falls in tyrosine hydroxylase activity at this site. Lesioned animals showed enhanced DA turnover and utilisation in striatal and limbic regions. There was no change in subcortical tyrosine hydroxylase activity. In addition there were significant falls in other putative neurotransmitters within basal ganglia sites, including 5-hydroxytryptamine and GABA. Decreased activity of the neurotransmitter-synthesizing enzymes glutamate decarboxylase and choline acetyltransferase was also recorded in certain regions of the basal ganglia. The results suggest that frontal cortical catecholamine systems may serve to regulate various neurotransmitter mechanisms in the basal ganglia.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2400-2402 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs layers that contain small Fe-based precipitates have been grown using molecular-beam epitaxy. The layers were produced either by codepositing Fe during GaAs growth or by first depositing a thin layer of an Fe-Ga alloy and then growing a capping layer of GaAs. Microstructural characterization of the layers was performed by using transmission electron microscopy. For those samples in which the Fe alloy layer was deposited, the layer disappeared after GaAs growth, leaving behind Fe-containing precipitates distributed throughout the GaAs overlayer. Precipitates were also formed in Fe codeposited samples. The sizes and number densities of the precipitates were dependent on the growth method used, with mean diameters ranging from 21 to 47 nm and number densities from 1013–1015 per cm3. The phase, orientation, and morphology of the particles were also dependent on the growth conditions used, with FeAs and Fe being observed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 115-117 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlGaN pn homo- and heterojunctions were fabricated on silicon carbide substrates by metalorganic chemical vapor deposition. AlN concentration in AlGaN layers ranged from 2 to 8 mol %. Mesa structures were made by reactive ion etching. Electroluminescence (EL) from AlGaN pn junctions was studied. EL peaks associated with near band-to-band transition in AlGaN were detected. The minimum wavelength of EL peak of ∼348 nm (hν∼3.56 eV, 300 K) was measured for a p-Al0.08GaN0.92/n-Al0.06Ga0.94N heterojunction. The dependence of the photon energy of the edge EL peak on AlN concentration in AlGaN was measured. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 533-535 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence of GaN layers grown on 6H–SiC substrates was studied in the temperature range 77–900 K. GaN layers were grown by metalorganic chemical vapor deposition. The temperature dependence of the band gap of GaN was measured throughout the entire temperature range. Edge cavity stimulated emission from photopumped GaN layers was observed in the temperature range 77–450 K. The full width at half-maximum (FWHM) of the stimulated emission peak was ∼3 nm at 300 K and ∼7 nm at 450 K. Multipass stimulated emission with Fabry–Pérot modes was detected from GaN. The FWHM of Fabry–Pérot modes was ∼0.2 nm (300 K). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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