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  • 1
    Electronic Resource
    Electronic Resource
    The effect of as-implanted damage on the microstructure of threading dislocations in MeV implanted silicon (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1221-1225 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dose dependence of as-implanted damage and the density of threading dislocations formed after MeV implants into Si is measured. The role of the damage and amorphization in the evolution of dislocation microstructure is assessed. As-implanted damage is analyzed by Rutherford backscattering spectroscopy and channeling. Defect etching is used to delineate threading dislocations in near-surface regions of annealed (900 °C, 30 min) samples. For a variety of implants with 1.1 μm projected range (600 keV B, 1 MeV P, and 2 MeV As) we observe a sharp onset for formation of threading dislocations with a peak in dislocation density at a dose of about 1×1014 cm−2, this dose depends on the ion mass. With a further increase in dose, the dislocation density decreases. This decrease, however, is drastically different for the different ions: sharp (4–5 orders of magnitude) reduction for P and As implants and slow decline for B implant. The sharp decrease in the density of threading dislocations at higher doses is correlated with the onset of amorphization observed by channeling for P and As implants. Our data for low-temperature implants provide conclusive proof that a reduction in the dislocation density for P and As implants is a result of amorphization. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370874
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  • 2
    Electronic Resource
    Electronic Resource
    Gas-phase reactions of cobalt(1+) and rhodium(1+) with toluene, cycloheptatriene, and norbornadiene (1984)
    s.l. : American Chemical Society
    Inorganic chemistry 23 (1984), S. 553-557 
    Details
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ic00173a014
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  • 3
    Electronic Resource
    Electronic Resource
    Formation of extended defects in silicon by high energy implantation of B and P (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2105-2112 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The extended defects induced in silicon by high energy implantation (1.5 MeV B and 2.6 MeV P) have been investigated by plan-view and cross-sectional transmission electron microscopy studies and defect etching measurements. The threading dislocations were identified to be long dislocation dipoles generated in the region of the ion projected range which grew up to the surface. The formation of threading dislocations is shown to have a strong dependence on the implantation dose and O concentration. After 900 °C annealing, a high density of threading dislocations was formed for B and P implants in a dose range of 5×1013–2×1014 cm−2 and 5×1013–3×1014 cm−2, respectively. The threading dislocation density in B-implanted Czochralski Si substrates was found to be much higher than that in B-implanted epitaxial Si substrates. This difference is attributed to the strong pinning effect of oxygen immobilizing dislocations in Czochralski substrates. Because P impurities are also efficient at pinning dislocation motion in Si, a high density of threading dislocations was observed even in epitaxial Si substrates with P implantation. Two-step annealing with a first step at 700 °C (to precipitate oxygen) and a second step at 900 °C was found to be very effective at eliminating the formation of threading dislocations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363103
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  • 4
    Electronic Resource
    Electronic Resource
    Influence of fluorine implant on boron diffusion: Determination of process modeling parameters (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3056-3060 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of low-dose ion implants with Si+, Ne+, and F+ on the transient enhanced diffusion of B in silicon after annealing at 900 °C for 30 min have been investigated. Processing conditions such as implant dose (3.5×1013 cm−2) and energy (30–60 keV) were chosen to simulate the lightly doped drain implant in a 0.35 μm complementary metal-oxide-semiconductor technology. An epitaxially grown B-doping superlattice is used to extract directly depth profiles of average Si self-interstitial concentration after processing. For Si+ the transient enhanced diffusion of B increases with the energy of the implanted ion. Ne+ implanted with the same energy as Si+ causes more transient enhanced diffusion, while Ne+ implanted with the same range as Si+ causes slightly less. Implantation of F+ enhances the B diffusivity considerably less than Si or Ne implantation. These effects were modeled using simulations of defect diffusion in the presence of traps. A trap concentration of (2.4±0.5)×1016 cm−3 gave good agreement in all situations except F+ implantation, where (6.6±0.6)×1016 cm−3 traps were necessary. It is proposed that this is caused by additional traps for Si interstitials that are related to F+. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358656
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  • 5
    Electronic Resource
    Electronic Resource
    Iron gettering mechanisms in silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3275-3284 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron implantation into silicon offers a unique system for studying the gettering mechanisms of Fe. Using deep level transient spectroscopy to monitor the remaining Fe in the gettered region and secondary-ion-mass spectroscopy to measure the concentration of Fe redistributed to the B region, we show that the gettering mechanisms can be quantitatively described. A combination of Fermi-level-induced Fe+ charge-state stabilization and Fe+–B− pairing acts to lower the free energy of Fe in p+ regions. This can lead to Fe partition coefficients as high as 106 at a p+/p interface at temperatures below ≈400 °C. The dynamic response of the system is diffusion limited during the cooling cycle. B gettering is more effective than gettering produced by Si implantation damage and more effective than trapping by a neutral impurity such as C. These mechanisms also make a large contribution to the effective gettering of Fe by p/p+ epitaxial silicon wafers. The Fermi-level/pairing gettering mechanism is also expected to operate for Cr and Mn. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363236
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  • 6
    Electronic Resource
    Electronic Resource
    Application of neutron interferometry to the measurement of thin film density (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 469-471 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The application of neutron interferometry to the measurement of the atom density of polymer thin films (〈1 μm thick) supported on silicon substrates is described. Polymer films were chosen primarily for their fixed, well-defined stoichiometry; however, the technique is applicable to films of any elemental composition. The wavelength-independent phase shift of a beam of thermal neutrons passing through the sample gives a measure of the product of the film atom density, the film thickness, the lattice spacing of the silicon interferometer, and the scattering lengths of the constituent elements of the film. The film thickness was found by x-ray reflectivity while the other two parameters are well-defined quantities. The technique does not rely on complex mathematical modeling of physical processes nor on thin film standards for data interpretation. With some refinements, neutron interferometry is envisioned as an important tool in the creation of thin films having well-defined densities which will be useful in the calibration of many analysis techniques. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123038
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  • 7
    Electronic Resource
    Electronic Resource
    Transient enhanced diffusion from decaborane molecular ion implantation (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2015-2017 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transient enhanced diffusion (TED) from implantation of 5 keV B10H14 and 0.5 keV B ions has been quantified and compared for nominal boron doses of 1014 and 1015 cm−2. Boron diffusivity during annealing was extracted from secondary ion mass spectroscopy depth profiles of diffused marker layers in boron doping-superlattices and the actual implanted B dose was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. Transmission electron microscopy analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal 1015 cm−2 B dose. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancement on implant dose. These findings are consistent with the understanding that TED is caused by the interstitial supersaturation resulting from a number of excess interstitials approximately equal to the number of implanted atoms which can become substitutional in the silicon lattice. Accordingly, no contribution to TED is expected from the hydrogen in the B10H14 ions and none is observed. Furthermore, there is no detectable effect in the diffusion profiles which can be attributed to a difference in the ion damage produced by the decaborane molecule and the boron atom. In both cases the reduction in diffusivity enhancement is due only to proximity of the implantation-induced excess interstitials to the wafer surface. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122353
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  • 8
    Electronic Resource
    Electronic Resource
    Capture of vacancies by extrinsic dislocation loops in silicon (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 67-69 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The capture of a flux of vacancies in Si by a band of extrinsic dislocation loops has been observed in Sb doping superlattices. Annealing Sb doping superlattices containing a band of dislocation loops in NH3 results in an injection of vacancies, which enhances the diffusion of Sb spikes located between the surface and loop band. By extracting the diffusivity in the Sb spikes on either side of the loop band, we conclude that over 90% of the injected vacancies are captured by the loops. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120646
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  • 9
    Electronic Resource
    Electronic Resource
    Transient enhanced diffusion of Sb and B due to MeV silicon implants (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3281-3283 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si+ ion implants at very high doses ((approximate)1016 cm−2). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation ((approximate)700 at 740 °C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of {311} defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV implant under similar annealing conditions, implying that an interstitial supersaturation is present at the same time. We discuss possible mechanisms for a simultaneous supersaturation of both types of point defects. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119150
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  • 10
    Electronic Resource
    Electronic Resource
    The mechanism of iron gettering in boron-doped silicon (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 51-53 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-energy B implantation was used to introduce gettering layers into float-zone Si wafers contaminated with 2×1014 Fe/cm3. Secondary ion mass spectrometry shows that about 5% of the Fe contamination is collected at the 4 μm deep peak of a 4×1014/cm2, 3.3 MeV B implant after annealing at 1000 °C for 1 h. Deep level transient spectroscopy demonstrates that increasing the gettering B dose from 4×1012 to 4×1014/cm2 reduces the Fe concentration from 3×1012 to below ∼1010/cm3 in the 1–3 μm deep region from the surface, indicating very efficient gettering. Measurements of the Fe depth profile imply that the depletion of Fe near the gettering layer occurs upon cooling down from 1000 °C. The gettering behavior can be qualitatively understood in terms of a Fermi-level-enhanced pairing reaction between Fe and B. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116754
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