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  • 1
    Electronic Resource
    Electronic Resource
    Inhomogeneous and temperature-dependent p-InGaAs/n-InP band offset modification by silicon δ doping: An internal photoemission study (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3258-3261 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measured by internal photoemission the conduction-band discontinuity ΔEc in p-In0.53Ga0.47As/n-InP heterojunctions with a Si δ layer (1×1012 cm−2) inserted in InP at 10 A(ring) from the interface. The n-type Si δ doping induced an inhomogeneous and temperature-dependent conduction-band offset reduction as revealed by two onsets in the spectral response. The first one was absent in room-temperature data and was due to the Si intralayer presence. The second correlated with the conduction-band discontinuity value for heterojunctions without δ doping and its presence served as an indication of the inhomogeneity of the Si δ layer. The measured value of the modification was 0.11±0.04 eV in good agreement with the calculated one. Current-voltage measurements confirmed that the Si δ layer modified the transport parameters of the heterojunction only at low temperature. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360014
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  • 2
    Electronic Resource
    Electronic Resource
    Au/GaAs(100) interface Schottky barrier modification by a silicon nitride intralayer (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 292-296 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a modification by thin silicon nitride intralayers of the Au/n-GaAs(100) Schottky barrier height. Thin intralayers were obtained by nitridation of evaporated Si films on decapped GaAs substrates in an argon–nitrogen mixture plasma. The nitridation was performed at a beam energy 〈40 eV, with 573 K sample temperature. Gold was deposited to study in situ the Schottky barrier formation process with x-ray photoelectron spectroscopy. Internal photoemission spectroscopy and current–voltage measurements were used to evaluate the barrier modification on fully formed interfaces. Such a modification was analyzed in terms of theoretical calculations of the dipole created by the substrate–intralayer bonds. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363847
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  • 3
    Electronic Resource
    Electronic Resource
    Photoemission electron microscopy studies of Pt/GaP(001) buried interfaces (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1460-1464 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using (secondary) photoelectron emission microscopy, we studied the fully formed 80 A(ring) Pt/n–GaP(001) interface with a lateral resolution better than 2 μm. We probed the chemically etched and sulfur passivated GaP(001) surface by ultraviolet and soft x rays. The radiation source was either a deuterium lamp or the radiation from ELETTRA's U12.5 undulator. Due to their escape depth, the photoemitted secondary electrons carry chemical information of buried interfaces. The use of tunable synchrotron radiation enabled us to obtain chemical contrast by digital subtraction of the microimages taken at photon energies above and below each core-level absorption edge. The microimages revealed lateral changes in photoyield efficiency and chemical composition. The results were confirmed by x-ray photoemission spectromicroscopy measurements performed using Al Kα radiation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362983
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  • 4
    Electronic Resource
    Electronic Resource
    Influence of nitrogen profile on electrical characteristics of furnace- or rapid thermally nitrided silicon dioxide films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7114-7122 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin silicon dioxide films nitrided in N2O by rapid thermal processing (RTP) or in a classical furnace were investigated by x-ray photoelectron spectroscopy, secondary ion mass spectroscopy, and electrical measurements on metal-oxide-semiconductor capacitors. Differences between the two nitridation processes were observed and explained. In lightly nitrided films, nitrogen occupies two configurations. Nitrogen is bound to three silicon atoms with at least one in the substrate or all three in the oxide. In RTP-nitrided films, both of these species are confined to within 1.5 nm of the Si/SiO2 interface. In furnace-nitrided films, the first species is also located close to the interface whereas the second one fills most of the regrown oxide thickness. In furnace-grown films, which are more heavily nitrided, a third structure due to Si2=N–O is observed throughout the layer. The electrical characteristics are well correlated with the amount of nitrogen at the interface that is bound to Si atoms in the substrate. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361481
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  • 5
    Electronic Resource
    Electronic Resource
    Inhomogeneous and thickness-dependent chemical reactivity at GaSe–Si interfaces (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7694-7696 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scanning photoelectron spectromicroscopy experiments on the edge of patterned Si overlayers on GaSe revealed the presence of an inhomogeneous reaction with a metallic-like Ga phase separation. The Si–Se chemically shifted components show lateral variations and a thickness-related SiSe2/SiSex (x=0.5, 1, and 1.5) ratio on a micrometer scale. The dependence of the peak intensities on the overlayer thickness suggests an initial layer-by-layer coverage until (approximate)2 Å, followed by a clustering growth mode. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370573
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  • 6
    Electronic Resource
    Electronic Resource
    Schottky barrier and interface formation of metal–GaTe(001) interfaces (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1990-1993 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied the deposition of Au, In, Ag, and Al overlayers onto clean-cleaved GaTe(001) surfaces at room temperature by x-ray photoelectron spectroscopy. Gold and In overlayers did not produce evidence of chemical reactions, and neither with cation nor anion outdiffusion. Gold overlayers exhibited no evidence of island formation and a layer-by-layer overlayer coverage. The deposition of In revealed the presence of clustering for a metal thickness higher than 6 Å. On the other hand, the deposition of Al lead to an exchange reaction with a metalliclike Ga phase separation. Core level analysis of the Ag–GaTe interface revealed no noticeable change of the shape of the peaks. The dependence of the peak intensities on overlayer thickness showed an initial layer-by-layer coverage until 1.8 Å, followed by a clustering growth mode. From about 3.7 Å Ag thickness, significant Te outdiffusion was observed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368332
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  • 7
    Electronic Resource
    Electronic Resource
    Band discontinuity fluctuations and local chemistry at the GaSe–Si interface (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1859-1861 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoemission spectromicroscopy data on Si–GaSe with 0.2 μm lateral resolution revealed laterally inhomogeneous interface Se–Si chemical reactions. The local Si 2p fits agrees with interface Si selenide parameters; the Se 3d peaks indicate a Si–selenide component; the Ga 3d peaks exhibit a metallic component whose intensity increases with Si coverage. This local interface reaction is related to lateral changes in the band lineup. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122306
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  • 8
    Electronic Resource
    Electronic Resource
    Novel spectromicroscopy: Pt–GaP studies by spatially resolved internal photoemission with near-field optics (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2361-2363 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The combination of internal photoemission and near-field optics is proposed as a generally applicable approach to study the lateral variations of solid interface properties such as energy barriers and electron-hole recombination rates. A successful test on Pt–GaP is described in which topographic and nontopographic phenomena are revealed, in particular recombination rate variations and small lateral changes of the Schottky barrier height. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117525
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  • 9
    Electronic Resource
    Electronic Resource
    Thin layer chromatography and counter-current analysis in porphyrias (1975)
    Oxford, UK : Blackwell Publishing Ltd
    British journal of dermatology 93 (1975), S. 0 
    Details
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The porphyrin metabolism of 100 patients with porphyria and 351 of their relatives has been studied. Thin layer chromatography of methyl esters of the urinary porphyrin was undertaken in sixty-six patients with different types of porphyria, and forty-five relatives, seventeen patients with hepatic cirrhosis, three patients with lead poisoning and twenty normal control subjects. This investigation was also made on the stools of thirty-six patients with porphyria, and ten of their relatives. Countercurrent analysis of the bile of nine selected patients with porphyria was also undertaken.The results provide some evidence that symptomatic hepatic porphyria may be familial. Thin layer chromatography was decisive in the characterization of a new type of porphyria described recently by the authors (hepato-erythrocytic porphyria). The counter-current examination of the bile showed the absence of the ‘S 411’ porphyrin in all the nine cases investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2133.1975.tb06493.x
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  • 10
    Electronic Resource
    Electronic Resource
    Repetitive somatic embryogenesis in Medicago truncatula ssp. Narbonensis and M. truncatula Gaertn cv. Jemalong (1999)
    Springer
    Plant cell reports 18 (1999), S. 398-405 
    Details
    ISSN: 1432-203X
    Keywords: Key wordsMedicago truncatula ; Repetitive somatic embryogenesis
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Medicago truncatula ssp Narbonensis and four genotypes of M. truncatula Gaertn cv. Jemalong were tested for their somatic embryogenesis potential using a two-step protocol. In the first step, embryogenic callus was induced in folioles isolated from shoots grown in vitro and cultured on Murashige and Skoog (MS) medium supplemented with 2,4-dichlorophenoxyacetic acid and zeatin. In the second step, somatic embryos were allowed to develop from the induced callus in MS growth-regulator-free medium. Individual somatic embryos were then isolated and transferred again to growth regulator free medium where they formed secondary somatic embryos in repetitive cycles. Conversion of somatic embryos into plantlets was achieved by isolating late-torpedo-phase somatic embryos with distinct cotyledons and reculturing them onto MS growth regulator free medium. The system of repetitive somatic embryogenesis in M. truncatula described here represents a permanent source of embryogenic material that can be used for the genetic modification of this species.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002990050593
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