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  • 1
    Electronic Resource
    Electronic Resource
    Selective activation of noradrenergic neurons in the brainstem and spinal cord of young spontaneously hypertensive rats (1978)
    Springer
    Cellular and molecular life sciences 34 (1978), S. 1042-1043 
    Details
    ISSN: 1420-9071
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary In young spontaneously hypertensive rats (SHR), dopamine β-hydroxylase (DBH) and phenylethanolamine N-methyltransferase (PNMT) activities were examined in the brainstem nuclei. Activation of noradrenergic neurons in the locus coeruleus, A2 and spinal intermediolateral cell areas, resulting in enhanced sympathetic nervous activity in the periphery, initiates hypertension. Adrenergic neurons, unchanged in these and A1 cell areas of young SHR, are not involved in the development of hypertension in SHR.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01915335
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  • 2
    Electronic Resource
    Electronic Resource
    Influence of silicon wafer surface orientation on very thin oxide quality (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1159-1164 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of silicon wafer surface orientation on very thin oxide quality were studied, testing Si(100) and (111) wafers. It has been found that the very thin oxide quality is determined by the silicon wafer surface orientation, and that when Si(111) is oxidized, SiO2/Si(111) interface microroughness increases as oxide becomes thicker than 10 nm, resulting in a degradation of oxide films quality on Si(111). When oxide thickness is decreased less than 10 nm, Si/SiO2 interface smoothness is maintained similar for Si(100) and (111) but SiO2/Si interface for Si(111) exhibits larger interface charges and larger threshold-voltage shift due to hot-electron injection than that for Si(100). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358980
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  • 3
    Electronic Resource
    Electronic Resource
    Theoretical calculation of hydrogen molecule in silicon (1998)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 3222-3225 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: First principle quantum chemical calculations have been performed on a hydrogen molecule in the silicon crystal using the cluster model of Si10H16. The ab initio molecular orbital theory and the density functional theory (DFT) calculations have been examined. In all calculations, the tetrahedral site is the most stable trapping site for the hydrogen molecule. The DFT calculations with generalized gradient approximation show that the bond length of H2 in the silicon crystal is comparable to that of gaseous H2. The calculated vibrational frequency of H2 in the silicon crystal agrees well with the experimental value obtained by Murakami et al. [Phys. Rev. Lett. 77, 3161 (1996)]. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.475718
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  • 4
    Electronic Resource
    Electronic Resource
    Distributions of single-carrier traps in GaAs/AlxGa1−xAs heterostructures (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2220-2222 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study single-carrier traps in a GaAs/AlxGa1−xAs heterostructure by observing random telegraph signals (RTSs), which are caused by the traps having energy levels within a few kBT of the Fermi level. RTSs are observed in a split gate device while a narrow channel is shifted by independently controlling the voltage applied to each part of the split gate. This measurement reveals the variations of the energy levels of traps with the channel position. From these variations the locations and the energy distributions of the traps are demonstrated. The strength of the confinement potential around the trap is also discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115109
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  • 5
    Electronic Resource
    Electronic Resource
    Device length dependence of optical second-harmonic generation in AlGaAs quasiphase matched waveguides (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1554-1556 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Device length dependence of optical second-harmonic generation (SHG) in AlGaAs semiconductor quasiphase matched (QPM) waveguides with periodically crystal domain inverted gratings has been studied both experimentally and theoretically. It is found that the SHG power depends strongly on device length. An optimum device length for obtaining maximum SHG is shown for QPM-SHG devices with non-negligible waveguide propagation loss. It is also shown that this optimum device length can be predicted theoretically, making experimental optimization unnecessary. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118636
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  • 6
    Electronic Resource
    Electronic Resource
    Formation of self-aligned CoSi2 on selective epitaxial growth silicon layer on (001)Si inside 0.1–0.6 μm oxide openings prepared by electron beam lithography (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3692-3694 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The self-aligned formation of CoSi2 was achieved on the selective epitaxial growth (SEG) silicon layer on (001)Si inside 0.1–0.6 μm oxide openings prepared by electron beam lithography. The uniform, high quality SEG Si layer was grown by ultrahigh vacuum chemical vapor deposition at 560 °C with Si2H6. Self-aligned CoSi2 film without lateral growth of silicide was grown on the SEG Si layer by rapid thermal annealing at 700 °C in N2 ambient. The successful integration of the self-aligned CoSi2 and SEG of Si processes promises to be a viable process technology for the future deep submicron devices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117191
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  • 7
    Electronic Resource
    Electronic Resource
    Epitaxial growth of NiSi2 on (111)Si inside 0.1–0.6 μm oxide openings prepared by electron beam lithography (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 999-1001 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of NiSi2 on (111)Si inside 0.1–0.6 μm oxide openings prepared by electron beam lithography has been studied by field emission scanning electron microscopy, transmission electron microscopy, and thin-film stress measurement. Striking effects of size and shape of deep submicron oxide openings on the growth of NiSi2 epitaxy were observed. Epitaxial growth of NiSi2 of single orientation on (111)Si was found to occur at a temperature as low as 400 °C inside contact holes of 0.2 μm or smaller in size. Contact holes were found to be more effective in inducing the epitaxial growth of NiSi2 of single orientation than that of linear openings of the same size. The effects of size and shape of lateral confinement on the epitaxial growth of NiSi2 on (111)Si are correlated with the stress level inside oxide openings. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117108
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  • 8
    Electronic Resource
    Electronic Resource
    Carrier traps in a GaAs/AlxGa1−xAs single electron transistor (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2861-2863 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study carrier traps in a single electron transistor fabricated from a GaAs/AlxGa1−xAs heterostructure. In the heterointerface, there are many kinds of defects, which induce various trap levels in the band gap of AlxGa1−xAs or GaAs. The current through the transistor switches between two states because of trapping and detrapping of a single electron. The gate voltage dependencies of the switching indicate how the traps are spatially distributed. The possibility of the existence of a trap with multilevels is also discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116349
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  • 9
    Electronic Resource
    Electronic Resource
    The dissolution behavior of the void defects by hydrogen annealing in Czochralski grown silicon crystals (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3525-3527 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The annihilation of grown-in defects by hydrogen annealing have been explained as the dissolution of oxygen precipitates, because it has been generally thought that grown-in defects in Czochralski silicon crystals are gigantic oxygen precipitates. However, it is necessary to re-examine the mechanism of the annihilation of the defects by hydrogen annealing, because recently it has been shown that the grown-in defects were voids of octahedral shape. In this letter, a simulation model is presented which describes the annihilation process of void defects by hydrogen annealing. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119221
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  • 10
    Electronic Resource
    Electronic Resource
    The Outer Membrane Proteins of Gram-Negative Bacteria: Biosynthesis, Assembly, and Functions (1978)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Biochemistry 47 (1978), S. 481-532 
    Details
    ISSN: 0066-4154
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Chemistry and Pharmacology , Biology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.bi.47.070178.002405
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