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  • 1995-1999  (1)
  • 1970-1974  (2)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Infrared absorption of Ge epitaxial films on a GaAs substrate (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7157-7160 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Germanium films were deposited on GaAs (100) substrates with or without an epiready surface oxide at temperatures between room temperature (RT) and 500 °C using an ultrahigh-vacuum e-beam deposition system. The film at 100 °C on a substrate with a surface oxide had a flat absorption curve over the wave-number range investigated, 500–4000 cm−1, with an absorption of less than 10/cm at 1000 cm−1 (10 μm wavelength). Films deposited at RT and 50 °C on substrates with a surface oxide had comparable low absorption, but they contained an absorption peak at 830 cm−1 associated with the Ge—O bonds. Although all three films were amorphous, the films deposited at the lower temperatures were more porous. This enabled oxygen to percolate in from the atmosphere to form the Ge—O bonds. The films deposited at 150 °C and above on substrates with a surface oxide and at 100 °C with the surface oxide removed thermally in situ prior to deposition the Ge films, and the single crystal films deposited at 400 and 500 °C on oxide-free substrates, had strong absorption in the vicinity of the Ge/GaAs interface with the characteristic of two-dimensional free-carrier absorption. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361486
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Growth of unusual silicon carbide polytypes by island formation (1974)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 7 (1974), S. 515-518 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Unusual SiC polytypic features have been studied by X-ray diffraction and chemical etching to increase understanding of their growth mechanism. The feasibility of periodic slip as a possible mode of growth of SiC polytypes has been examined. It is proposed that island formation on the helicoidal growth surface is responsible for most of the unusual SiC polytypes not explicable purely in terms of a screw-dislocation mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889874010363
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    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    A new polytype of silicon carbide, 189R. Its structure and growth (1973)
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 29 (1973), S. 1548-1550 
    Details
    ISSN: 1600-5740
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0567740873004930
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    Paper (German National Licenses)
    Fulltext
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