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  • 1
    Electronic Resource
    Electronic Resource
    Highly Concentrated Branched Oligosaccharides as Cryoprotectant for Surimi (1999)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 64 (1999), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Freeze-thawing studies at different concentrations, using an actomyosin solution (extracted from Alaska pollock), revealed that an 8% (w/v) solution of oligosaccharides mixture (HBOS) was most effective in cryoprotection. During frozen storage (-18°C), HBOS showed cryoprotective effects similar to sucrose and a sucrose+sorbitol mixture (1:1). Surimi gel prepared with HBOS showed higher hardness and more dense microstructure than others, although water holding capacity was slightly lower than the gel with sucrose+sorbitol. HBOS containing gel showed lower whiteness than sucrose but no difference with sucrose+sorbitol. HBOS appeared to have good potential as a non-sweet cryoprotectant of fish protein.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.1999.tb15055.x
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of pressure on the pore formation of carbon/carbon composites during carbonization (1999)
    Springer
    Journal of materials science 34 (1999), S. 4585-4595 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract In this study, porosity and graphitizability of coal tar pitch with the treatment pressure were investigated. 4-directional carbon/carbon composites (4D C/C) were made from the matrix precursor of coal tar pitch through the process of impregnation and carbonization. Then the effects of applied pressure during the densification on the composites were observed. The matrix pitch which had 600 bar applied during the carbonization process had one and a half times less pore area ratio than that treated at 1 bar. When the pitch was heat treated up to 2300°C after the high pressure carbonization, the degree of graphitization was improved on a small scale and the crystal size tended to reduce. As the applied pressures to 4D C/C composites increased from 1 to 600 bar, the densification ratio was greatly improved. In the pore size distribution of the 4D C/C composites, the macropore portion was decreased while the mesopore portion increased, when high pressures were applied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1004674213884
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  • 3
    Electronic Resource
    Electronic Resource
    Observation of the 5 1Πu, 6 1Σu+, and 7 1Σu+ states of Na2 through a Franck–Condon window by all-optical triple resonance spectroscopy (1998)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 109 (1998), S. 102-107 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have observed the 5 1Πu, 6 1Σu+, and 7 1Σu+ states of Na2 by using all-optical triple resonance excitation and an ultrasensitive shielded cylindrical space-charge-limited ionization detector (presumably detecting Na3+ produced by Na2*+Na associative ionization). Although the absolute vibrational numbering is uncertain, the rotational constants are obtained. The Franck–Condon window concept is presented with calculated Franck–Condon factors based on the theoretical 5 1Πu, 6 1Σu+, and 7 1Σu+ potential energy curves of Magnier. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.476526
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  • 4
    Electronic Resource
    Electronic Resource
    Initial interface formation study of the Mg/Si(111) system (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1151-1155 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The initial interface and silicide formation induced by Mg adsorption on the Si(111)7×7 surface have been studied using low-energy electron diffraction, x-ray photoelectron spectroscopy, and synchrotron radiation photoelectron spectroscopy. At room temperature, it is found that Mg atoms are preferably adsorbed on top sites of Si adatoms and rest atoms on the Si(111)7×7 surface and with increasing of Mg deposition, a Mg2Si epitaxial layer is formed and the surface structure transforms from the diffuse (1×1) phase into the (2/3(square root of)3×2/3(square root of)3)R30°. After growing up to a critical thickness, the Mg film grew in a disordered phase on the epitaxial layer. The Fermi level of the Mg2Si film is positioned at 0.51±0.05 eV above the valence band maximum. On the other hand, at 300 °C the Mg2Si epitaxial layer was formed in the (1×1) phase on the Si(111)7×7 and grew up to a critical thickness in the initial stage. For the successive evaporation, the Mg film grew in a disordered phase on the Mg2Si(111)1×1 surface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360349
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  • 5
    Electronic Resource
    Electronic Resource
    Optical and structural properties of ZnCdSe/ZnSSe/ZnMgSSe separate confinement heterostructures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5951-5954 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown ZnCdSe/ZnSSe/ZnMgSSe separate confinement heterostructures by molecular-beam epitaxy. Strain on the ZnSSe layer is calculated from x-ray and photoluminescence data. The temperature dependence of band-gap energy and the photoluminescence intensity in the Cl-doped ZnCdSe active layers is compared with that of undoped ones. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363590
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  • 6
    Electronic Resource
    Electronic Resource
    Determination of densities and mobilities of heavy and light holes in p-type Si using reduced-conductivity-tensor analyses of magnetic-field-dependent Hall and resistivity measurements (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4425-4428 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The densities and mobilities of the individual heavy- and light-hole carriers have been simultaneously determined at various temperatures (40 K to 130 K) in three p-type, single-crystal Si samples. The separation of the two-hole components is achieved by multicarrier analyses of magnetic-field-dependent Hall and resistivity measurements within the two-carrier approximation of the reduced-conductivity-tensor scheme. The explicit experimental values for the densities and mobilities of the two-hole components obtained in this work should be considered as a valuable addition to the existing database for silicon material parameters. They should also be useful to silicon device physics and modeling.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363403
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  • 7
    Electronic Resource
    Electronic Resource
    Wannier–Stark localization in a strained-layer InxGa1−xAs/InyGa1−yP superlattice (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7161-7163 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an observation of the Wannier–Stark effect in a strained InGaAs/InGaP superlattice grown on a GaAs substrate. A blueshift of the effective absorption edge is observed in room and low-temperature photocurrent and transmission measurements. A ∼2000 cm−1 absorption change due to the transition of the absorption edge from a broad to a sharp quantum well-like excitonic shape was obtained for as little as a 2 V change in bias voltage. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361487
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  • 8
    Electronic Resource
    Electronic Resource
    Formation mechanism of crystallites in the as-deposited mixed-phase low pressure chemical vapor deposition silicon thin films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1794-1800 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy study on the microstructure of silicon thin films, deposited at temperature ranges of 565 °C∼600 °C and at 200 mTorr by low pressure chemical vapor deposition and annealed at 570 °C, was carried out so that the formation mechanism of crystallites observed in as-deposited mixed-phase silicon thin films could be proposed. Crystallites were observed only at the Si/SiO2 interface in the as-deposited silicon thin film deposited at 570 °C for 28 min. Their size was about 20 nm and they had an irregular shape. Areal density of crystallites in the as-deposited film was about 4 × 1010/cm2, but that in the film deposited as an amorphous phase and annealed at 570 °C for 2 h was about 2×109/cm2. No remarkable crystal growth occurred in the film deposited at 570 °C for 28 min and then annealed at 570 °C for 1 h. Two kinds of crystallites were observed in the film annealed at 570 °C for 3 h. The first, observed only at the Si/SiO2 interface, had an irregular shape, and the second, grown through the entire thickness of the film, had an elongated elliptical shape. On the basis of above results, it was proposed that crystallites observed in as-deposited silicon thin films were formed not because silicon films deposited as an amorphous phase had been annealed during the deposition process, but because silicon films were deposited as a crystalline phase at the initial stage of the deposition process and then deposited as an amorphous phase after the initial stage of the deposition process. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360971
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  • 9
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy study of SiF/BF2 implanted and annealed (100)Si: Amorphization and residual effects (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7549-7554 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Formation of amorphous layers and residual defects in SiF+/BF2+ implanted and annealed (100)Si was investigated on an atomic level by using a high-resolution transmission electron microscope. Amorphous layers, of which depths were about 70% of those of amorphous layers formed by Si+ preamorphization at the same implantation energies, could be formed by SiF+ preamorphization. Two distinct layers of defects were formed in SiF+/BF2+ implanted wafers annealed at 600 °C for 1 h and then rapidly thermally annealed at 950 °C for 30 s. One layer, observed near the surface regions, consisted of intrinsic stacking faults bounded by 30° Shockley partial dislocations, twins, amorphous regions, and fine clusters. The other layer, observed near the original amorphous/crystalline interface, consisted of Frank partial dislocations of which Burgers vector is 1/3a〈111〉 and 60° perfect dislocations of which Burgers vector is 1/2a〈110〉. These defects were formed by retarding growth rate by fluorine atoms; outdiffusion of fluorine atoms; lattice misorientation between the substrate and crystalline pockets; and the introduction of an extra half- plane during the preamorphization process. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362410
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  • 10
    Electronic Resource
    Electronic Resource
    High-resolution transmission electron microscopy study of solid phase crystallized silicon thin films on SiO2: Crystal growth and defects formation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 95-102 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A high-resolution transmission electron microscopy study of the solid phase crystallization of amorphous silicon thin films deposited on SiO2 at 520 °C by low pressure chemical vapor deposition and annealed at 550 °C in a dry N2 ambient was carried out so that the grain growth mechanism, various types of defects, and the origins of defect formation could be understood on an atomic level. Silicon crystallites formed at the initial stage of the crystallization had a circular shape and grains had a branched elliptical or a dendritic shape. Many twins, of which {111} coherent boundaries were parallel to the long axis of a grain, were observed in the interior of all the elongated grains. In addition to twins, the following defects were observed in the grain: intrinsic stacking faults, extrinsic stacking faults, perfect dislocations, extended screw dislocations, and Shockley partial dislocations. These defects were formed by the following reasons: errors in the stacking sequence at the amorphous/crystalline interface; jumps of a twin plane; the intersecting of two crystal growth fronts slightly misoriented; and the intersecting of two twin planes at the amorphous/crystalline interface. Among those defects, twins and stacking faults provided a preferable nucleation site for an atomic step of a {111} plane. As a result, it was concluded that grain growth in the 〈112〉 direction along the {111} plane parallel to the long axis of a grain was accelerated by twins and stacking faults. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359359
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