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  • 1995-1999  (3)
  • 1965-1969  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Polycrystalline silicon formed by ultrahigh-vacuum sputtering system (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 217-223 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using an ultrahigh-vacuum (UHV) sputtering system, we could grow two new methods of polycrystalline silicon films. The one is as-deposited polycrystalline silicon on glass at substrate temperatures under 500 °C. The other is solid-phase-crystallization by thermal annealing of as-deposited amorphous silicon films in a UHV. As-deposited polycrystalline silicon films were oriented to (220) and grain sizes were determined from half-width of x-ray diffraction to be about 40 nm. From the deposition temperature dependence of the x-ray diffraction peak intensity, the activation energy of the crystalline growth was calculated to be about 0.6 eV. Hydrogen atoms in the sputtering gas lower the reproducibility of as-deposited poly-Si. Polycrystalline silicon films produced by thermal annealing of as-deposited amorphous silicon films at 550 °C in UHV have a (111) orientation. Field-effect mobilities of the as-deposited polycrystalline silicon film and the polycrystalline silicon film by UHV thermal annealing were 5 and 18 cm2/V s, respectively. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360782
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of hydrogen ion shower doping in polycrystalline silicon thin-film transistors (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 31-33 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the effect of hydrogen ion shower doping on polycrystalline silicon thin-film transistors (p-Si TFTs). Hydrogen atoms were introduced to the channel region of p-Si TFTs by PH3/H2 ion shower doping of the source/drain contact. Hydrogen concentration in the channel region can be controlled by altering the gate metal thickness. Hydrogen atoms affect the TFT's threshold voltage shifts until it becomes negative, in n-type TFTs. The threshold voltage shift depends on the hydrogen content of the channel region in p-Si TFTs. This is explained by the existence of Si−3 trap states in the grain boundaries. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114171
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  • 3
    Electronic Resource
    Electronic Resource
    Substrate Limiting Melanogenic Inhibitor in Malignant Melanomas (1967)
    [s.l.] : Nature Publishing Group
    Nature 216 (1967), S. 189-190 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Fig. 1. Tyrosinase radio-assay of Fortner's melanoma soluble fraction at various concentrations. We first obtained evidence for the presence of this substance while studying the total amount of melanin formed under low substrate conditions using varying concentrations of the soluble fraction, ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/216189a0
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  • 4
    Electronic Resource
    Electronic Resource
    Special cell surface structure, and novel macromolecule transport/depolymerization system of Sphingomonas sp A1 (1999)
    Springer
    Journal of industrial microbiology and biotechnology 23 (1999), S. 425-435 
    Details
    ISSN: 1476-5535
    Keywords: Keywords: Sphingomonas; macromolecule transport; pit; polysaccharide lyase; ABC transporter
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Process Engineering, Biotechnology, Nutrition Technology
    Notes: A bacterium isolated from soil as an alginate lyase producer shows characteristic morphological and taxonomical properties consistent with being classified in the genus Sphingomonas. The bacterium utilizes high molecular weight (HMW)-alginate for growth by depolymerization of the polymer with intracellular alginate lyases, which are generated from a common precursor protein through autoregulated post-translational modifications. Electron microscopic observations of the cell surface and of thin sections of cells grown on HMW-alginate revealed dynamic changes in both cell surface and membrane structures. The most remarkable change is recognized in the formation of mouth-like pits which open and close depending on the presence or absence of HMW-alginate. Enzymatic and genetic analyses of HMW-alginate incorporation processes confirmed the presence of a pit-dependent and macromolecule-specific ABC transporter system in cells of Sphingomonas species A1. This is the first description of a bacterium with a pit on the cell surface and a pit-dependent endocytosic uptake system for macromolecules.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/sj.jim.2900719
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