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  • 1
    Electronic Resource
    Electronic Resource
    The bonding of CAs acceptors in InxGa1−xAs grown by chemical beam epitaxy using carbon tetrabromide as the source of carbon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6754-6760 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InxGa1−xAs layers (0≤x≤0.37) doped with carbon (〉1020 cm−3) were grown on semi-insulating GaAs substrates by chemical beam epitaxy using carbon tetrabromide (CBr4) as the dopant source. Hall measurements imply that all of the carbon was present as CAs for values of x up to 0.15. The C acceptors were passivated by exposing samples to a radio frequency hydrogen plasma for periods of up to 6 h. The nearest-neighbor bonding configurations of CAs were investigated by studying the nondegenerate antisymmetric hydrogen stretch mode (A−1 symmetry) and the symmetric XH mode (A+1 symmetry) of the H–CAs pairs using IR absorption and Raman scattering, respectively. Observed modes at 2635 and 450 cm−1 had been assigned to passivated Ga4CAs clusters. New modes at 2550 and 430 cm−1 increased in strength with increasing values of x and are assigned to passivated InGa3CAs clusters. These results were compared with ab initio local density functional theory. Modes due to AlInGaCAs clusters were detected in samples containing grown in Al and In. These results demonstrate that for InGaAs, CBr4 is an efficient C doping source since both In–CAs bonds as well as Ga–CAs bonds are formed, whereas there is no evidence for the formation of In–CAs bonds in samples doped with C derived from trimethylgallium or solid sources. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363803
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  • 2
    Electronic Resource
    Electronic Resource
    The infrared vibrational absorption spectrum of the Si–X defect present in heavily Si doped GaAs (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 137-141 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heavily silicon doped GaAs grown by molecular beam epitaxy using a single gallium isotope source (69Ga) has been studied by infrared absorption to reveal localized vibrational modes (LVMs) of Si complexes. The structure observed close to 367 cm−1 is the same as that present in normal GaAs:Si spectra and does not result from mixed Ga isotopes. The electron trap Si–X gives three LVMs at 368.4, 370.0, and 399.6 cm−1, typical of second neighbor donor-acceptor pairs, but inconsistent with a previous proposal that its structure is the planar defect VGa–SiAs–AsGa. It is now suggested that the defect is a perturbed SiGa–VGa center, involving a second Si atom or a second vacancy. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365791
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  • 3
    Electronic Resource
    Electronic Resource
    Accurate RBS Measurements of the Indium Content of InGaAs Thin Films (1997)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 25 (1997), S. 254-260 
    Details
    ISSN: 0142-2421
    Keywords: InGaAs ; RBS ; absolute composition determination ; measurement accuracy ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Rutherford backscattering is used to obtain absolute compositional data from InGaAs thin films without any reference standards. Carbon-doped InxGa1-xAs thin films with compositions varying between 0.02〈x〈0.4 have been analysed and values of x obtained with an estimated accuracy of ∽1% in most cases. The observed variation in two measurements of a set of nine samples with a range of values of x has a mean of 1.000 and a standard deviation of 2.2%. This observed error is not inconsistent (at the 5% significance level) with the estimated error. The analytical method described is valid for many compound thin films. © 1997 by John Wiley & Sons, Ltd.
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    SIMS analysis of Al δ-doped GaAs test structures using chemical bevelling as a sample preparation technique (1995)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 23 (1995), S. 665-672 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: A chemical bevelling technique has been developed to synthesize high-magnification bevels in gallium arsenide for SIMS linescanning and imaging. Bevels have been prepared in gallium arsenide substrate material, in gallium arsenide implanted with aluminium and in two delta-doped (aluminium) GaAs test structures. The accuracy, sensitivity, dynamic range and depth resolution-depth characteristics of the bevel and linescan approach have been compared to conventional SIMS depth profiling. Images of the bevelled structures have been used to obtain a quick view of the features of interest. Linescans have yielded an aluminium profile from the aluminium implant that is very similar to that from a SIMS depth profile. Linescan results from the aluminium deltas in gallium arsenide indicate that depth resolutions of a few nanometers can be retained to depths of several microns. The depth resolution of the deltas has been measured as a function of bevel magnification and a theory has been developed to explain the results. A peak width (resolution) of 2.2 nm for an aluminium delta has been achieved at a bevel magnification of 6000 using a 15 keV 16O2+ ion beam, and a depth resolution limit of 1.3 nm has been deduced by extrapolation to infinite bevel magnification. The combined effects of beam-induced mixing, microtopography and the escape depth of the secondary ions is a broadening of 2.0 nm for these conditions.
    Additional Material: 11 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740231004
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