Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
66 (1995), S. 204-205
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have measured the electron and hole impact ionization coefficients in Si1−xGex alloys. Carrier multiplication measurements were made on relaxed Si1−xGex/Si diodes grown by gas source molecular beam epitaxy. The hole to electron impact ionization coefficient ratio, β/α, varies from 0.3 to 4 in the composition range of x=0.08–1.0. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.113134
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