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  • 1
    Electronic Resource
    Electronic Resource
    Alfvén ion–ion hybrid wave heating in the Phaedrus-T tokamak (1996)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 1331-1339 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the Phaedrus-T tokamak [R. A. Breun et al., Fusion Technol. 19, 1327 (1991)], Alfvén waves are indirectly driven by a fast wave antenna array. Small fractions of minority ions are shown to have a large effect on the Alfvén spectrum, as measured at the edge. An ion–ion hybrid Alfvén mode has been identified by measuring dispersion properties. Landau damping is predicted to be large and spatially localized. These Alfvénic waves are experimentally shown to generate correlated electron heating and changes in density near the core of the tokamak plasma. Fast wave antenna fields can mode convert at a hybrid Alfvén resonance and provide a promising route to spatially localized tokamak heating and current drive, even for low effective ionic charge Zeff≈1.3–2. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.871786
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  • 2
    Electronic Resource
    Electronic Resource
    Alfvén wave current drive in the Phaedrus-T tokamak (1995)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 2 (1995), S. 2263-2271 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first experimental evidence of Alfvén Wave Current Drive (AWCD) in a tokamak is shown. In a low-density experiment, an estimated 20–35 kA out of 65 kA total current, or 30%–55% of the total current has been driven. The estimated efficiency for current driven per unit RF input power is approximately ICD/PRF≈0.2 A/W, which is near the predicted efficiency, and corresponds to the commonly used figure of merit, neR0ICD/PRF≈0.4×1018 A m−2 W−1, where ne is plasma density and R0 is the major radius. The significant 30%–40% drop in loop voltage observed cannot be explained by any plausible increase in electron temperature Te, or decrease in inductive plasma energy, or changes in plasma resistivity. Independently measured loop voltage, Te, effective ionic charge Zeff, and plasma inductance and resistance are all consistent with this conclusion. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.871249
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  • 3
    Electronic Resource
    Electronic Resource
    Analysis of loop voltage evolution in current drive experiments in the Phaedrus-T tokamak (1995)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 2 (1995), S. 4551-4554 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The loop voltage response in the low-frequency current drive experiments is analyzed in order to extract information about the current drive profile and efficiency. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.871012
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  • 4
    Electronic Resource
    Electronic Resource
    Does high density–low pressure etching depend on the type of plasma source? (1996)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 2197-2202 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Etching of SiO2 with CF4 in three types of high density–low pressure (5×1011 cm−3, 1–10 mTorr) etch tools: electron cyclotron resonance (ECR), inductively coupled (ICP), and helicon (HRF) is described. Although the physical processes that produce the plasma in the three types of sources are quite different, the etch rate processes are identical when viewed from the wafer sheath boundary. Measurements demonstrate that if sufficient fluorine is present, the etch rate limiting step depends only on the ion energy flux to the wafer, rather than on the details of the chemical species. Etch rate control depends only on the wafer bias power. Experimental results are device independent so the etch rate in high density–low pressure plasma sources does not depend on the plasma source power. Major differences in tool etch rate characteristics are more likely determined by tool wall material (and wall chemistry) and tool geometry rather than the physical process that is used to produce the plasma. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.871675
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  • 5
    Electronic Resource
    Electronic Resource
    Measurements on rotating ion cyclotron range of frequencies induced particle fluxes in axisymmetric mirror plasmas (1997)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 4 (1997), S. 2947-2954 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comparison of phenomenological features of plasmas is made with a special emphasis on radio-frequency induced transport, which are maintained when a set of two closely spaced dual half-turn antennas in a central cell of the Phaedrus-B axisymmetric tandem mirror [J. J. Browning et al., Phys. Fluids B 1, 1692 (1989)] is phased to excite electromagnetic fields in the ion cyclotron range of frequencies (ICRF) with m=−1 (rotating with ions) and m=+1 (rotating with electrons) azimuthal modes. Positive and negative electric currents are measured to flow axially to the end walls in the cases of m=−1 and m=+1 excitations, respectively. These parallel nonambipolar ion and electron fluxes are observed to be accompanied by azimuthal ion flows in the same directions as the antenna-excitation modes m. The phenomena are argued in terms of radial particle fluxes due to a nonambipolar transport mechanism [Hojo and Hatori, J. Phys. Soc. Jpn. 60, 2510 (1991); Hatakeyama et al., J. Phys. Soc. Jpn. 60, 2815 (1991), and Phys. Rev. E 52, 6664 (1995)], which are induced when azimuthally traveling ICRF waves are absorbed in the magnetized plasma column. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872427
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  • 6
    Electronic Resource
    Electronic Resource
    Real-Time Measurement of Thin Film Thickness During Plasma Processing (1997)
    Springer
    Plasmas and polymers 2 (1997), S. 229-244 
    Details
    ISSN: 1572-8978
    Keywords: Laser interferometer ; full wafer imaging interferometer ; film etching and deposition rates ; film thickness ; film uniformity ; real-time monitoring
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract An in situ single point two-color laser interferometer is used to monitor in real-time the thickness of thin transparent films during processing. The instantaneous change of film thickness is determined by comparing the measured laser reflection interference to that calculated by a model. The etch or deposition rates of the film are determined within 1–2 seconds. The film thickness is also determined in real-time from the phase difference of the reflected laser intensity between the two laser colors. Use of two-color laser interferometry improves the accuracy of the calculated etch or growth rates of the film considerably. Moreover, the two colors provide a clear distinction between film etching and deposition, which may often occur during the same process, and can not be determined by a single color interferometer. The uniformity of the film's etch or deposition rates across the substrate is monitored by an in situ full-wafer image interferometer. The combined use of these two sensors provide instantaneous information of the film thickness, etch or growth rates, as well as time averaged uniformity of the process rates. This diagnostic setup is very useful for process development and monitoring, which is also suitable for manufacturing environment, and can be used for real-time process control.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1021830100153
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