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Exciton states in In x Ga1−x As/GaAs double quantum wells: Normalized reflection spectra (1995)

D'Andrea, A. ; Tomassini, N. ; Ferrari, L. ; [weitere]

Springer

Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1423-1427

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Details

ISSN: 0392-6737

Schlagwort(e): Excitons and related phenomena (including electron-hole drops) ; Surface and interface electron states ; Conference proceedings

Quelle: Springer Online Journal Archives 1860-2000

Thema: Physik

Notizen: Summary Normalized reflection spectra in GaInAs/GaAs quantum wells are shown for two sets of samples with different alloy concentration (x=9% and 18.5%) and well thickness ranging from 1.5 nm to 25 nm. All samples were grown on (001) GaAs surface by Molecular Beam Epitaxy and characterized by RHEED and X-ray reflection diffraction. Exciton envelope function in effective mass approximation and optical response in polaritonic schema are computed. Normalized reflection spectroscopy has shown itself to be a well suited technique in order to study structural and electronic properties of confined quantum structures.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF02457221

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