ISSN:
0392-6737
Keywords:
Excitons and related phenomena (including electron-hole drops)
;
Surface and interface electron states
;
Conference proceedings
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Summary Normalized reflection spectra in GaInAs/GaAs quantum wells are shown for two sets of samples with different alloy concentration (x=9% and 18.5%) and well thickness ranging from 1.5 nm to 25 nm. All samples were grown on (001) GaAs surface by Molecular Beam Epitaxy and characterized by RHEED and X-ray reflection diffraction. Exciton envelope function in effective mass approximation and optical response in polaritonic schema are computed. Normalized reflection spectroscopy has shown itself to be a well suited technique in order to study structural and electronic properties of confined quantum structures.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF02457221
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