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  • 1995-1999  (5)
  • 1
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Allergy 53 (1998), S. 0 
    ISSN: 1398-9995
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Journal of sol gel science and technology 13 (1998), S. 213-217 
    ISSN: 1573-4846
    Keywords: bismuth oxide ; bismuth silicate ; thin film ; sol-gel ; surface techniques
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Bi2O3 thin films were prepared by dipping silica slides in ethanolic solutions of tris(2,2′-6,6′-tetramethylheptane-3, 5-dionato)bismuth(III) [Bi(dpm)3] [1] and heating in air at temperatures ≤500°C. Bi4(SiO4)3 homogeneous thin films were obtained from the reaction of the bismuth oxide coating with the silica glass substrate at temperatures higher than 700°C. For heat treatments at temperatures between 600°C and 700°C, Bi2SiO5 coatings were obtained. The composition and microstructure evolution of the films were determined by Secondary Ion-Mass Spectrometry (SIMS), X-Ray Photoelectron Spectroscopy (XPS) and Glancing Angle X-Ray Diffraction (GA-XRD). The synthesis procedure was reproducible and allowed the control of the Bi2O3 phase composition. Moreover, the thin film annealing parameters were correlated with the formation of bismuth silicates, among which Bi4(SiO4)3 (BSO) is very appealing for the production of fast light-output scintillators [2].
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 32 (1997), S. 6163-6173 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Changes of composition and structure of various types of polysiloxanes and polycarbosilanes when submitted to irradiation with ions of increasing mass, were analysed by means of several ion-beam analytical techniques, Raman and Fourier transform–infrared spectroscopies. Ion irradiations is as efficient as annealing at temperatures above 1000°C for releasing hydrogen from these organic–inorganic polymers, and the radiolytic evolution of hydrogen is selective, whereas methane, silanes and carbon monoxide are also evolved during heat treatments. The kinetics of the polymer conversion into amorphous ceramics depends strongly on the linear density of energy transferred by ions to electron shells of target atoms, according to the ion energy per nucleon and to the nature of the side groups. Some of the carbon atoms segregate in clusters exhibiting a diamond-like hybridization state, in contrast to the clusters of turbostratic graphite formed in pyrolysed films.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 32 (1997), S. 6175-6182 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The hardnesses of polycarbosilane and polysiloxane coatings subjected to irradiation with increasing doses of He, C and Au ions were measured by means of nanoindentation tests. Diamond-like carbon clusters which are formed during irradiation enhance the hardnesses of the ceramic films which reach in some cases three times that of conventionally annealed specimens. When submitting irradiated films to an additional anneal, the clusters resulting from the segregation of atoms from methyl groups remain more diamond like than those formed directly by radiolysis of phenyl rings, especially when the radiolytic transformation is incomplete (the film having received a low irradiation dose). Moreover, owing to the selective release of hydrogen and the recombination of free radicals at room temperature, no evolution of CHx and COx nor oxidation of unpaired Si atoms occurs during this post-irradiation anneal, contrary to the observations during direct thermal conversion.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 33 (1998), S. 2405-2412 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Ceramic joints between reaction-bonded silicon carbide (RBSiC) were produced using a preceramic polymer (GE SR350 silicone resin) as joining material; samples were heat treated in an argon flux at temperatures ranging from 800–1200°C without applying any pressure. The strength of the joints was determined by four-point bending, shear and indentation tests. Microstructural and microchemical analyses were performed by optical microscopy, SEM, TEM and AEM. The room-temperature strength of the joints increased with the joining temperature. Maximum values as high as 220 MPa in bending and 39 MPa in shear tests were reached for samples joined at 1200°C. No detectable residual stresses were observed both in the joining material and the joined parts, and the fracture mechanism was nearly always cohesive. The joint thickness was shown to depend on the processing temperature, and ranged from about 2–7 μm. The joining material was a silicon oxycarbide amorphous ceramic, with no oxygen diffusion occurring between this and the RBSiC joined parts. The lack of compositional gradients, precipitates or reaction layers indicate that the SiOC ceramic acted as an inorganic adhesive, and that the joining mechanism involved the direct formation of chemical bonds between the RBSiC parts and the joining material. © 1998 Chapman & Hall
    Type of Medium: Electronic Resource
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