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  • 1995-1999  (6)
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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 4165-4167 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microwave surface resistance (Rs) of YBa2Cu3O7−x (YBCO) films sputtered simultaneously on both sides of CeO2 coated sapphire wafers of 3 in. diameter was measured using the disk resonator technique at a frequency of 1.92 GHz. By deposition of Au layers of various thicknesses on the unpatterned YBCO side of the disk resonator, we studied the effective Rs of the Au-contacted YBCO films. Although the Au layer was not directly exposed to the microwave power, it dramatically increased the effective Rs of the YBCO film. For example, Rs(77 K)=16.5 μΩ of a 300-nm-thick YBCO film increased to 85 μΩ by the deposition of a 0.1-μm-thick Au layer. The increase of the Au thickness to 1.2 μm resulted in a further enhancement of the effective Rs up to 560 μΩ. We explain this effect in terms of the impedance transformation model. According to this model the effective Rs of the Au/YBCO bilayer decreases with increasing YBCO film thickness. However, Au layers with thicknesses above 1 μm considerably enhance the effective Rs even for thick YBCO films (700–800 nm). A higher quality of the YBCO films (in terms of shorter London penetration depths) reduces the effect of a Au layer, while a low electrical resistivity of this layer leads to a further increase of the effective Rs. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 661-663 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: C-axis oriented YBa2Cu3O7−x (YBCO) thin films were deposited on polycrystalline metallic tapes buffered with yttria stabilized zirconia (YSZ). The in-plane alignment of the YSZ layers achieved by simultaneous ion bombardment of the growing film (ion beam assisted deposition) and of the postdeposited YBCO thin films was studied by x-ray diffraction as a function of the buffer layer thickness. A significant improvement of the in-plane texture, achieved for buffer layers exceeding a thickness of about 1.5 μm, resulted in high critical current densities above 106 A/cm2 of the YBCO films. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 574-576 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial growth of Bi2Sr2Ca2Cu3Ox (BSCCO 2223) films has been realized on (001)MgO with a cylindrical sputtering gun. The 2223 films with the c axis perpendicular to (001)MgO exhibit three types of in-plane epitaxial relations, i.e., [100]BSCCO(parallel)〈100〉MgO, [100]BSCCO(parallel)〈150〉MgO, and [100]BSCCO(parallel)〈110〉MgO. Individual domains possess respective in-plane mosaic distributions, which manifest that different epitaxial growth modes take place. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2403-2405 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bi2Sr2Can−1CunOx thin films have been prepared in situ on MgO(100) by dc-sputtering employing a single cylindrical target. The thin films are of almost pure Bi2Sr2Ca2Cu3Ox (2223) or intergrowth phases known as random stacking-fault structures of two phases having adjacent n. Deviations from the sputtering conditions for the 2223 growth induce the phase intergrowth of 2212, 2223, and 2234. The phase intergrowth occurs in connection with film compositions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3215-3217 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural analyses and investigations of flux penetration of typically melt-textured YBa2Cu3O7−δ samples were performed. This allows regions of suppressed critical current density to be directly related to microstructural defects. At small-angle grain boundaries the critical current density was found to be reduced by a factor of up to 20. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1572-9605
    Keywords: Superconductor ; thin film ; GdBaCuO
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Thin films of GdBaCuO (GBCO) have been deposited in situ onto LaAlO3 single crystal substrates by inverted cylindrical sputtering pattern (ICP). The superconductive properties of the thin films' dependence on the substrate temperature and sputtering pressure have been systematically investigated. By optimization of the deposition parameter, high-quality c-axis epitaxial GBCO thin films of T c0〉92 K were reproducibly grown. The T c of the best sample is as high as 93.2 K. Upon changing the target composition to GdBa2Cu4O y (Gd124), it was observed that the samples always show some a-axis oriented films, implying that excess copper would favor a-axis growth in thin films. The superconductivity of the thin films under higher substrate temperature (T s〉800°C) was clearly improved by the procedure of special post-oxygenization at 400°C with an ozone atmosphere. This is very useful for preparing large-area thin films of GBCO.
    Type of Medium: Electronic Resource
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