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  • 1
    Electronic Resource
    Electronic Resource
    The other function of DNA photolyase: stimulation of excision repair of chemical damage to DNA (1995)
    s.l. : American Chemical Society
    Biochemistry 34 (1995), S. 15886-15889 
    Details
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/bi00049a002
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  • 2
    Electronic Resource
    Electronic Resource
    The bonding of CAs acceptors in InxGa1−xAs grown by chemical beam epitaxy using carbon tetrabromide as the source of carbon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6754-6760 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InxGa1−xAs layers (0≤x≤0.37) doped with carbon (〉1020 cm−3) were grown on semi-insulating GaAs substrates by chemical beam epitaxy using carbon tetrabromide (CBr4) as the dopant source. Hall measurements imply that all of the carbon was present as CAs for values of x up to 0.15. The C acceptors were passivated by exposing samples to a radio frequency hydrogen plasma for periods of up to 6 h. The nearest-neighbor bonding configurations of CAs were investigated by studying the nondegenerate antisymmetric hydrogen stretch mode (A−1 symmetry) and the symmetric XH mode (A+1 symmetry) of the H–CAs pairs using IR absorption and Raman scattering, respectively. Observed modes at 2635 and 450 cm−1 had been assigned to passivated Ga4CAs clusters. New modes at 2550 and 430 cm−1 increased in strength with increasing values of x and are assigned to passivated InGa3CAs clusters. These results were compared with ab initio local density functional theory. Modes due to AlInGaCAs clusters were detected in samples containing grown in Al and In. These results demonstrate that for InGaAs, CBr4 is an efficient C doping source since both In–CAs bonds as well as Ga–CAs bonds are formed, whereas there is no evidence for the formation of In–CAs bonds in samples doped with C derived from trimethylgallium or solid sources. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363803
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  • 3
    Electronic Resource
    Electronic Resource
    Planning nursing education for the 21st century (1995)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of advanced nursing 21 (1995), S. 0 
    Details
    ISSN: 1365-2648
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: In looking towards the 21st century, the faculty at the Presbyterian Hospital School of Nursing, along with the Presbyterian Health Services Corporation and Queen's College, adopted a 1-2-1 programme The process of developing a new nursing curriculum is presented as the task force proceeded from the philosophy and goals to conceptual framework and curriculum objectives After discussions with nurse administrators and educators, extensive literature reviews and brainstorming sessions, concepts and subconcepts were chosen to form a philosophy The metaparadigm of nursing and other related concepts were then organized into a conceptual framework Ongoing communication and feedback from the faculty ensured group ownership of all documents The eclectic organizational scheme was a good fit for a large faculty with differing beliefs and values about a nursing curriculum The process of developing a future orientated nursing curriculum has been exciting, challenging and rewarding The faculty is committed to the new philosophy, goals and conceptual framework and believe that the 1–2–1 programme will educate future practitioners who are prepared to meet the challenges and changes in health care for the 21st century
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2648.1995.21040772.x
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  • 4
    Electronic Resource
    Electronic Resource
    The suppression of misfit dislocation introduction in heavily carbon doped GaAs (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 60-62 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relaxation of heavily carbon doped GaAs, grown on (001) GaAs substrates was investigated using transmission electron microscopy and x-ray diffraction. Misfit dislocation introduction occurred only significantly above Matthews and Blakeslee's critical thickness, with the onset of relaxation being delayed as the C concentration was increased. The resultant strain relaxation was highly anisotropic with the introduction of As-cored misfit dislocations being totally suppressed at the highest C levels, resulting in cracking of the epilayer. Locking of As-cored partial dislocations and a reduction in misfit dislocation velocity is proposed as the cause of the anisotropy and lack of relaxation. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119306
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  • 5
    Electronic Resource
    Electronic Resource
    Metalorganic molecular beam epitaxy of GaN and Al(Ga)N on GaAs(001) studied using laser reflectometry and reflectance anisotropy spectroscopy (1999)
    Springer
    Journal of materials science 10 (1999), S. 585-588 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract We report the growth of GaN and AlGaN films on GaAs (0 0 1) substrates in the temperature range 400–800 °C by metalorganic molecular beam epitaxy. An r.f. plasma nitrogen source was used in conjunction with triethylgallium and ethyl-dimethylamine-alane group III sources. Growth was initiated using either a low temperature AlN buffer layer or a graded arsenide-nitride buffer layer. The growth was monitored in real time using in-situ laser reflectometry. The temperature dependence of growth rates for the nitride layers are compared with their arsenide analogs. The relative growth rate of gallium nitride/gallium arsenide from triethylgallium was found to be in the range 54–60%, the Ga incorporation rates are closely comparable when the higher density of GaN is taken into account. The range of growth temperatures for gallium nitride extends to higher temperatures compared with gallium arsenide probably due to lower evaporation rates of Ga bound to the nitride surface. Reflection anisotropy spectra indicate that atomic nitrogen readily reacts with the GaAs (0 0 1)-c (4 × 4) As-stabilized surface at temperatures as low as 400 °C but without the gross faceting that has been observed at higher temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1008909008317
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  • 6
    Electronic Resource
    Electronic Resource
    Carbon δ-doping GaAs superlattices (1996)
    Springer
    Journal of materials science 7 (1996), S. 355-360 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Carbon δ-doping GaAs superlattices incorporating 50 layers have been grown either by chemical beam epitaxy (CBE) using CBr4 as the source of the carbon or by metallorganic vapour phase epitaxy (MOVPE) using CCl4. Infrared (IR) localized vibrational mode (LVM) spectroscopy showed that carbon atoms were incorporated on the As sublattice and that hydrogen was incorporated as H-CAs pairs during growth by MOVPE. The hydrogen was removed by an anneal at 600
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00185930
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  • 7
    Electronic Resource
    Electronic Resource
    Adsorption of a Trichoderma reesei endoglucanase and cellobiohydrolase onto bleached Kraft fibres (1997)
    Springer
    Cellulose 4 (1997), S. 255-268 
    Details
    ISSN: 1572-882X
    Keywords: biotechnology ; cellulase ; endoglucanase ; cellobiohydrolase ; adsorption
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Abstract Cellulases can be used to modify pulp fibres. For the development of biotechnical applications, a better understanding of the adsorption of cellulases onto commercial wood fibres is needed. In this work, the adsorption behaviour of purified CBH I and EG II on bleached Kraft fibres was investigated. Three variables were studied with respect to their effect on adsorption: fibre type (hardwood or softwood), fibre history (never-dried or once-dried), and ionic strength. The results showed that fibre history had the largest influence on the extent of adsorption of each enzyme. The effect of ionic strength was shown to be dependent on the enzyme and fibre type. At high ionic strength, CBH I exhibited a higher affinity for both once-dried and never-dried fibres at low enzyme concentrations; however, salt was shown to decrease the extent of adsorption at higher enzyme dosages. In contrast, salt increased the maximum adsorption of EG II, most notably on the once-dried hardwood fibres. Fibre type was also shown to affect adsorption behaviour. CBH I had a higher affinity for softwood fibres than for hardwood fibres at low enzyme concentrations. The maximum adsorption of EG II onto once-dried softwood fibres increased by 80% compared to the once-dried hardwood fibres. Interestingly, this did not correlate to in creased fibre hydrolysis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1018444008305
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  • 8
    Electronic Resource
    Electronic Resource
    Degradation of 4,5-dichloroguaiacol by soil microorganisms (1995)
    Springer
    World journal of microbiology and biotechnology 11 (1995), S. 536-540 
    Details
    ISSN: 1573-0972
    Keywords: Chemostat ; chlorocatechol ; chloroguaiacol ; chlorolignin ; soil microorganisms
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Abstract No microorganisms could be isolated from chemostats or from a soil column fed with 4,5-dichloroguaiacol as the only carbon source. If guaiacol was added to chemostats with 4,5-dichloroguaiacol, either soil microbial consortia or guaiacol-degrading bacteria could dechlorinate the 4,5-dichloroguaiacol provided it was 〈0.2mm. A microbial consortium from farm soil removed 4,5-dichloroguaiacol under aerobic or anoxic conditions, with or without chlorolignin. Dichlorocatechol was the only 4,5-dichloroguaiacol-derived metabolite detected. In aerobic incubations, 4,5-dichlorocatechol was further degraded whereas under anoxic conditions it accumulated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00286369
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