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  • 1
    ISSN: 1432-0630
    Keywords: PACS: 39.10.+j
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. A system for parallel synthesis of atomically regulated lattices and nano-structured heterojunctions has been developed. This combinatorial laser MBE system is composed of a UHV-PLD chamber, scanning RHEED for in situ diagnostics of reactions at various areas of substrate surface, a pair of fixed and moving masks to define the film deposition area, and a computer for controlling the operation conditions as functions of deposition area and time. In this system, oxide layered lattice strips were deposited in parallel on a SrTiO3 substrate under RHEED observation of individual strips with different compositions and/or layer thickness.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 824-826 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have identified the surface polar structure of wurtzite-type ZnO films by coaxial impact-collision ion scattering spectroscopy. High-quality ZnO epitaxial films were prepared on sapphire (α-Al2O3) (0001) substrates by laser molecular beam epitaxy using a ZnO ceramic target. The (0001¯) crystallographic plane (the O face) was found to terminate the top surface of the ZnO film by comparing spectra of the films with those of well-defined (0001) and (0001¯) surfaces of bulk single crystals. The preferential [0001¯] growth direction of ZnO films is discussed from the viewpoints of the chemical interaction at the interface and surface stability against sublimation. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3543-3545 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of SrTiO3 films in cryogenic high-frequency applications has been limited by the low dielectric constant εr of thin films ((approximate)103) when compared to the bulk value of over 104. We show that the extension of the pulsed laser deposition technique to temperatures well above 1000 °C, coupled with in situ reflection high energy electron diffraction monitoring, makes it possible to grow SrTiO3 films in the step-flow mode. Films grown in this mode showed at 4.2 K a maximum εr of 12 700, which could be tuned by 80% by applying a bias voltage of ±1 V. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 980-982 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnO/Mg0.2Zn0.8O superlattices with a band-gap offset of about 0.5 eV were epitaxially grown by laser molecular-beam epitaxy on a sapphire(0001) substrate using a ZnO buffer layer. The superlattice structure with a period ranging from 8 to 18 nm was clearly verified by cross-sectional transmission electron microscopy, Auger depth profile, and x-ray diffraction. As the well layer thickness decreased below 5 nm, the photoluminescence peak and absorption edge in the photoluminescence excitation spectra showed a blueshift, indicating a quantum-size effect. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3366-3368 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of an oxide-diluted magnetic semiconductor, Mn-doped ZnO, were fabricated by pulsed-laser deposition technique. Solubility of Mn into ZnO exceeds thermal equilibrium limit as a result of nonequilibrium film growth process. As Mn content is increased, the lattice constants of both a and c axes of wurtzite Zn1−xMnxO films (x〈0.35) increase and the band gap expands although considerable in-gap absorption develops. Itinerant electrons over 1019 cm−3 can be doped into the Zn1−xMnxO films by Al doping, in contrast to low carrier density in the other II–VI diluted magnetic semiconductors. The temperature dependence of the resistivity is almost metallic and considerable magnetoresistance is observed at low temperatures. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1570-1572 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have established a deposition process of high quality a axis oriented YBa2Cu3O7−δ (a-YBCO) and insulating epitaxial PrGaO3 (PGO) films to fabricate a-YBCO/PGO(2.0–3.2 nm)/a-YBCO trilayer junction. The precipitate formation on the bottom a-YBCO was greatly suppressed by the atomic layer modification of the substrate surface with a wet etching and successive atomic layer epitaxy of SrO and BaO atomic layers prior to the YBCO deposition. Crack formation and residual stress in the film due to the thermal expansion mismatch along c axis of YBCO could be eliminated by inserting a buffer layer of a-YBCO deposited with changing the substrate temperature from 580 to 735 °C. The junctions showed a clear hysteresis with its current jump as large as 30%, together with the Fraunhofer diffraction. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2466-2468 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a widegap II–VI semiconductor alloy, MgxZn1−xO, for the fabrication of heteroepitaxial ultraviolet light emitting devices based on ZnO. The c-axis oriented MgxZn1−xO films were epitaxially grown by pulsed laser deposition on ZnO epitaxial films and sapphire (0001) substrates using ceramic targets. Solid solution films were prepared with Mg content up to x=0.33, achieving a band gap of 3.99 eV at room temperature. MgO impurity phase segregated at x≥0.36. Lattice constants of MgxZn1−xO films changed slightly (∼1%), increasing in a axis and decreasing in c-axis direction with increasing x. These films showed ultraviolet photoluminescence at energies from 3.36 (x=0) to 3.87 eV (x=0.33) at 4.2 K. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    European archives of oto-rhino-laryngology and head & neck 255 (1998), S. 289-292 
    ISSN: 1434-4726
    Keywords: Key words Olfactory epithelium ; Olfactory receptor ; cells ; Cell maturation ; Proliferating cell nuclear antigen
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract Changes in dividing cells of the olfactory epithelium from guinea pigs of different ages were examined by immunohistochemical staining using anti-proliferating cell nuclear antigen antibody. Numerous dividing cells were scattered diffusely in the basal layer of the olfactory epithelium at 1 and 2 months following birth and then gradually decreased with maturation until 4 months. Findings then remained constant between 4 and 24 months. Subsequently, cell numbers were found to decrease as animals became older. The number of olfactory receptor cells did not vary significantly between 1 and 30 months. Although no correlation could be found between the numbers of dividing cells and olfactory receptor cells, it is still possible that the longevity of the olfactory receptor cells changes to maintain the overall size of the neuronal population.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    European archives of oto-rhino-laryngology and head & neck 256 (1999), S. 212-214 
    ISSN: 1434-4726
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Journal of comparative physiology 178 (1996), S. 453-462 
    ISSN: 1432-1351
    Keywords: Electric fish ; Gymnotiform fish ; Pulse-type electric fish ; Jamming avoidance response ; Temporal pattern
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract The sensory cues for a less known form of frequency shifting behavior, gradual frequency falls, of electric organ discharges (EODs) in a pulse-type gymnotiform electric fish, Rhamphichthys rostratus, were identified. We found that the gradual frequency fall occurs independently of more commonly observed momentary phase shifting behavior, and is due to perturbation of sensory feedback of the fish's own EODs by EODs of neighboring fish. The following components were identified as essential features in the signal mixture of the fish's own and the neighbor's EOD pulses: (1) the neighbor's pulses must be placed within a few millisecond of the fish's own pulses, (2) the neighbor's pulses, presented singly at low frequencies (0.2–4 Hz), were sufficient, (3) the frequency of individual pulse presentation must be below 4 Hz, (4) amplitude modulation of the sensory feedback of the fish's own pulses induced by such insertions of the neighbor's pulses must contain a high frequency component: sinusoidal amplitude modulation of the fish's own EOD feedback at these low frequencies does not induce gradual frequency falls. Differential stimulation across body surfaces, which is required for the jamming avoidance response (JAR) of wave-type gymnotiform electric fish, was not necessary for this behavior. We propose a cascade of high-pass and low-pass frequency filters within the amplitude processing pathway in the central nervous system as the mechanism of the gradual frequency fall response.
    Type of Medium: Electronic Resource
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