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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Abdominal imaging 24 (1999), S. 202-204 
    ISSN: 1432-0509
    Keywords: Key words: Uterus, magnetic resonance imaging—Anomalies, congenital—Round ligament—Leiomyoma, degeneration.
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract. We report the magnetic resonance appearance of a case of round ligament leiomyoma that presented as a rapid growing inguinal mass in a patient with Mayer-Rokitansky-Kuster-Hauser syndrome.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 51 (1995), S. 1086-1088 
    ISSN: 1399-0047
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: Two crystal forms of DNA polymerase from Thermus aquaticus have been grown at room temperature. Rhombohedral crystals (form I) grown from ammonium sulfate solution diffracted poorly to 10 Å only and thus are not suitable for X-ray structure determination. Trigonal crystals (form II) grown from polyethylene glycol solution are more suitable for structure determination since their diffraction pattern extends to 2.5 Å at cryogenic temperature upon exposure to synchrotron X-rays. They belong to space group P3121 (or its enantiomorph P3221) and their unit-cell dimensions are a = 106.7 and c = 169.7 Å,̃ for flash-frozen crystals. The presence of one molecule per asymmetric unit gives a crystal volume per protein mass (VM) of 3.0 Å3 Da−l and a solvent content of 58% by volume. X-ray data have been collected to 2.7 Å Bragg spacing from native crystals.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 292-300 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, a matrix formulation of magnetoresistance in semiconductors is presented for an arbitrary J-fold multicarrier system which is based on the reduced-conductivity-tensor scheme and applicable in the nonquantizing regime where Landau orbital quantization is negligible. In the formalism, a unique expression of the magnetoresistance is deduced in terms of two vectors which depend on the carrier densities and mobilities, and three matrices which represent various inter-carrier couplings under the applied magnetic field. In particular, the mobility-difference matrix plays a key role, and its simple form strongly suggests a two-carrier model of magnetoresistance for a narrow continuum distribution. Explicit closed-form formulas of magnetoresistance are derived for the two-carrier (J=2) and three-carrier (J=3) systems as special cases of the general formalism. The field dependence and asymptotic behavior of the magnetoresistance are also discussed, and a two-carrier model of magnetoresistance is formally proposed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1151-1155 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The initial interface and silicide formation induced by Mg adsorption on the Si(111)7×7 surface have been studied using low-energy electron diffraction, x-ray photoelectron spectroscopy, and synchrotron radiation photoelectron spectroscopy. At room temperature, it is found that Mg atoms are preferably adsorbed on top sites of Si adatoms and rest atoms on the Si(111)7×7 surface and with increasing of Mg deposition, a Mg2Si epitaxial layer is formed and the surface structure transforms from the diffuse (1×1) phase into the (2/3(square root of)3×2/3(square root of)3)R30°. After growing up to a critical thickness, the Mg film grew in a disordered phase on the epitaxial layer. The Fermi level of the Mg2Si film is positioned at 0.51±0.05 eV above the valence band maximum. On the other hand, at 300 °C the Mg2Si epitaxial layer was formed in the (1×1) phase on the Si(111)7×7 and grew up to a critical thickness in the initial stage. For the successive evaporation, the Mg film grew in a disordered phase on the Mg2Si(111)1×1 surface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 3998-4009 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new procedure for calculating the nonlinear energy transfer and linear growth/damping rate of fully developed turbulence is derived. It avoids the unphysically large damping rates typically obtained using the predecessor method of Ritz [Ch. P. Ritz, E. J. Powers, and R. D. Bengtson, Phys. Fluids B 1, 153 (1989)]. It enforces stationarity of the turbulence to reduce the effects of noise and fluctuations not described by the basic governing equation, and includes the fourth-order moment to avoid the closure approximation. The new procedure has been implemented and tested on simulated, fully developed two-dimensional (2-D) turbulence data from a 2-D trapped-particle fluid code, and has been shown to give excellent reconstructions of the input growth rate and nonlinear coupling coefficients with good noise rejection. However, in the experimentally important case where only a one-dimensional (1-D) averaged representation of the underlying 2-D turbulence is available, this technique does not, in general, give acceptable results. A new 1-D algorithm has thus been developed for analysis of 1-D measurements of intrinsically 2-D turbulence. This new 1-D algorithm includes the nonresonant wave numbers in calculating the bispectra, and generally gives useful results when the width of the radial wave number spectrum is comparable to or less than that of the poloidal spectrum. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Beam emission spectroscopy (BES) measures localized density fluctuations in fusion plasma turbulence. A wavelet transform method of spectral analysis is applied to BES data to extract fluctuations without the long time-averaging characteristic of Fourier transform spectral analysis methods. This technique is used to observe an abrupt (∼100 μs) L–H transition on DIII–D. Wavelet-based cross correlation analysis can be used to obtain fluctuations of poloidal rotation velocity, and suggests opportunity for measurement of electrostatic potential fluctuation measurements. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A compact, portable, eight-channel, filter spectrometer has been designed for beam emission spectroscopy measurements of long-wavelength density fluctuations on TEXT-U and Phaedrus-T. The system uses radially elongated image volumes which maximize the étendue of the system while still resolving the dominant fluctuations (kr〈2 cm−1, kθ〈6 cm−1). Because of the vertical injection geometry of the TEXT-U diagnostic neutral beam, there is little Doppler shift of the beam emissions and thus a nonhydrogenic species must be used to distinguish between the beam and edge emissions. A He0 metastable beam has been found to provide good beam penetration with little contamination of the detected beam fluorescence by edge emission. A multistep excitation model is used to quantitatively interpret the fluctuations in the intensity of the He0 triplet (3P0–3D, 587.6 nm) as plasma density fluctuations. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4595-4602 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of temperature in low-pressure, diamond-forming, premixed flames are described. Optical emission spectroscopy was used to determine the rotational temperature of CH radicals in the flame by analyzing the spectra of the R-branch of the A 2Δ→X 2Π(0,0) CH electronic transition near 430 nm. Emission spectroscopic measurements were taken in stagnation-point flames of three different fuel types; CH4–O2, C2H4–O2, and C2H2–O2 flames, all of which have been previously used in the synthesis of diamond films. The emission-based rotational temperatures are found to be in good agreement with temperature measurements from thermocouples for the CH4–O2 flame, when a correction is made to the thermocouple measurements for radiation losses. The measurements show that peak flame temperatures are higher than the adiabatic flame temperatures for both C2H4–O2, and C2H2–O2 flames; a result that is also predicted by a numerical simulation of the stagnation-point strained flame that accounts for detailed finite-rate gas-phase chemistry and heterogeneous surface reactions. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3187-3194 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A matrix formalism for the Hall effect is presented for an arbitrary J-fold multicarrier semiconductor system. Explicit formulas are derived for important transport quantities such as the sheet resistance, the Hall coefficient, and the Hall scattering factor. For J≤3, these formulas reduce to simple closed-form expressions as a function of the applied magnetic field and the carrier densities and mobilities. The closed-form formulas are useful for the correct interpretation of the Hall effect in multicarrier semiconductor systems. The field dependence and asymptotic behavior of these formulas are also discussed.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2774-2778 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present contact-angle hysteresis and surface energy of differently treated indium–tin–oxide (ITO) thin films obtained from contact angles for liquids with different polar character. We find that the hysteresis and the polar and dispersion component of the surface energy depend strongly on the surface treatments. Oxygen-plasma treatments induce the highest polarity and the highest total surface energy, and we suggest that this improves the interface formation with polymers, and therefore, the performance of light-emitting diodes. We discuss the results in relation to the ITO surface roughness and chemical heterogeneity modified by the different treatments. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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