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  • 1995-1999  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2823-2825 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallization of amorphous BaxSr1−xTiO3 (BST) thin films was studied in a synchrotron x-ray scattering experiment. In a 550 Å thick film, the crystallization to perovskite phase was occurred at around 700 °C, while a 5500 Å thick film became crystalline at 500 °C. The thickness dependence of the crystallization was attributed to the observed intermediate phase nucleated near 600 °C at the interface. In thin films, high annealing temperature was required due to the energy barrier between the perovskite phase and the intermediate phase. In the thick film, the perovskite phase was nucleated directly from the amorphous phase in the bulk of the film concurrent to the nucleation of the intermediate phase at the interface. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2187-2189 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of growth temperature on the microscopic structure of GaN nucleation layers were studied in a synchrotron x-ray scattering experiment. As the growth temperature increases from 467 to 655 °C, the stacking of GaN changes from random stacking to a mixture of cubic and hexagonal stacking. With increasing the growth temperature, the order in the atomic layer positions in the out-of-plane direction increases and the mosaic distribution becomes narrow. The optimal photoluminescence spectrum was obtained on the GaN epilayer deposited on the nucleation layer grown at 505 °C. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1432-1203
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract Congenital adrenal hyperplasia (CAH) is a common autosomal recessive disorder mainly caused by defects in the steroid 21-hydroxylase (CYP21) gene. We have analyzed CYP21 gene sequences in 65 CAH families in Taiwan. All ten exons of the CYP21 gene were analyzed by differential polymerase chain reaction followed by single-strand conformation polymorphism electrophoresis and the amplification-created restriction site method. About 95% (123 chromosomes) contain mutations due to conversion of DNA sequences into its neighboring homologous pseudogene, CYP21P. Four novel mutations representing 5% of the total chromosomes have also been identified. The mutations were confirmed by sequencing an aberrant DNA fragment. These four mutations included a base change of the splicing donor site at intron 2 from GT to AT, a base substitution of C to T at codon 316, deletion of ten bases (TCCAGCTCCC) at codons 330–333 of exon 8, and duplication of 16 bases (CCTGGATGACACGGTC) at codons 393–397 of exon 9. The loss of the splicing donor site at intron 2 and the premature stop at codon 316 may result in aberrant splicing to reduce enzyme activity and a truncated protein with no enzyme activity, respectively. Likewise, both the duplication and the deletion forms create a frameshift and premature stop during translation. The resulting proteins lack the heme-binding domain and hence are expected to lose enzymatic activity. Since these mutations are not found in the neighboring CYP21P pseudogene, gene conversion should not be the cause of these novel mutations.
    Type of Medium: Electronic Resource
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