Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
75 (1999), S. 2187-2189
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The effects of growth temperature on the microscopic structure of GaN nucleation layers were studied in a synchrotron x-ray scattering experiment. As the growth temperature increases from 467 to 655 °C, the stacking of GaN changes from random stacking to a mixture of cubic and hexagonal stacking. With increasing the growth temperature, the order in the atomic layer positions in the out-of-plane direction increases and the mosaic distribution becomes narrow. The optimal photoluminescence spectrum was obtained on the GaN epilayer deposited on the nucleation layer grown at 505 °C. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.124959
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