ISSN:
1432-0630
Keywords:
PACS: 81.15.Fg; 77.90.+k; 85.50.+k
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract. We report on the deposition of SrBi2Nb2O9 and Sr1-xNaxBi2-xTexNb2O9 ferroelectric thin films on Pt/TiO2/SiO2/(100)Si substrates using the pulsed laser deposition technique. Deposition on substrates heated to 600–700 °C produces {11l} film texture and dense films with grain sizes up to about 500 nm. The recrystallization at 700 °C of amorphous films deposited at lower temperatures enhances the contribution of the {100} and {010} orientations. These films show smaller grain size, namely 50–100 nm. {11l}-oriented Sr1-xNaxBi2-xTexNb2O9 films have remnant polarization Pr≃4 μC/cm2, a coercive field Ec≃60 kV/cm and dielectric constant, ε≃300. The low value of Pr is probably related to the low fraction of grains with the ferroelectric axis in the direction of the applied field, E. The recrystallized films have more grains with the ferroelectric axis parallel to E; however, they have a low resistivity which so far has prevented electrical characterization.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s003390051541
Permalink