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  • 1995-1999  (4)
  • 1
    Electronic Resource
    Electronic Resource
    Laser transillumination of breast tissue phantoms using time-resolved techniques (1996)
    Springer
    European radiology 6 (1996), S. 387-392 
    Details
    ISSN: 1432-1084
    Keywords: Time resolve ; Transillumination measurements ; Breast
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract The objective of this study was to evaluate a pulsed laser transillumination technique based on time-resolved detection on breast-tissue-like phantoms. Experiments have been performed on tissue-like plastic phantoms with different scattering characteristics. The effects of time-gate width, size, localisation and refractive index of hidden objects have been scrutinised. Our study showed that the shorter the time-gate the higher the contrast. The contrast is very dependent on the size of the hole, whereas the full width half maximum is not. Furthermore, the investigation showed that the changes of early detected light in an experimental setting is due to scattering, and not to a higher speed of the transmitted light
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00180619
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical and optical properties of ruthenium-related defects in silicon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2495-2500 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical and optical properties of defects due to ion implantation of ruthenium in silicon have been studied by means of junction space-charge techniques. Two energy levels were observed with energy positions at Ec−0.184 eV (A-level) and EV+0.265 eV (B-level), respectively, at 77 K. The changes in enthalpy due to the capture of electrons and holes were −8 meV (A-level) and 1 meV (B-level). Gibb's free energies at different temperatures were calculated for both levels. Good agreement with the corresponding optical threshold energy was found for the B-level suggesting a small Frank–Condon shift. A tentative model for the origin of the observed defects is discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358778
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Temperature dependence of optical properties of the deep sulfur center in silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5312-5317 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectral distributions of the hole photoionization cross section of the deep sulfur center in silicon have been measured at 10 different temperatures within the range 75 K≤T≤297 K applying the steady-state photocurrent technique. Zero-phonon hole binding energies of the deep donor level have been determined at these temperatures by using a detailed numerical fitting procedure. The temperature dependence of the hole binding energy is well described by a novel analytical formula with a zero-temperature binding energy of 557 meV. Further analysis of our data resulted in a lattice adjustment energy (Franck–Condon shift) of 51 meV and an associated average phonon energy of 33 meV. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363469
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  • 4
    Electronic Resource
    Electronic Resource
    Coulomb effects on charged, buried metal disks at room temperature (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2610-2612 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Capacitance transients caused by capture and emission of electrons from buried metal disks are investigated. A single layer of tungsten disks, arranged in a square lattice, is introduced into GaAs by epitaxial overgrowth and a depleted layer is formed around the disks due to the metal–semiconductor Schottky barrier. The number of captured electrons on each disk is measured by the capacitance associated with the width of the depletion layer, whereas the capacitance transients reflect the changes in the number of excess electrons on the disks. By investigating the emission time constants for varying numbers of electrons in excess on the disks, the Coulomb effect is studied. In combination with a temperature-dependent capture, a Coulomb charging energy of only 4 meV is shown to shift the measured activation energies erroneously by hundreds of meV. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121433
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    Paper (German National Licenses)
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