ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Vertical channels in semi-insulating GaAs were realized by epitaxial overgrowth over lattices of W discs, including n×n vacant positions. The Schottky depletion around the metallic inclusions is responsible for the semi-insulating behavior, and, thus, conducting channels may be created in designed openings in the lattice. By measuring the current transport in structures with varying sizes of the channels, we demonstrate that the current is actually restricted to floating through the vacant positions. We further buried the metal discs, including openings, 60 nm above a resonant tunneling structure, and measured a negative differential resistance, with peak currents scaling with the opening area. These experiments demonstrate the effective combination of semiconductor heterostructures and embedded metal features for submicron, vertical injection into a heterostructure device. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.120141
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